JP2002289955A5 - - Google Patents

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Publication number
JP2002289955A5
JP2002289955A5 JP2001085248A JP2001085248A JP2002289955A5 JP 2002289955 A5 JP2002289955 A5 JP 2002289955A5 JP 2001085248 A JP2001085248 A JP 2001085248A JP 2001085248 A JP2001085248 A JP 2001085248A JP 2002289955 A5 JP2002289955 A5 JP 2002289955A5
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JP
Japan
Prior art keywords
nitride semiconductor
semiconductor laser
contact layer
laser device
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001085248A
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English (en)
Japanese (ja)
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JP2002289955A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001085248A priority Critical patent/JP2002289955A/ja
Priority claimed from JP2001085248A external-priority patent/JP2002289955A/ja
Priority to US10/104,931 priority patent/US6865201B2/en
Publication of JP2002289955A publication Critical patent/JP2002289955A/ja
Publication of JP2002289955A5 publication Critical patent/JP2002289955A5/ja
Pending legal-status Critical Current

Links

JP2001085248A 2001-03-23 2001-03-23 半導体レーザ素子とその製造方法および光学式情報再生装置 Pending JP2002289955A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001085248A JP2002289955A (ja) 2001-03-23 2001-03-23 半導体レーザ素子とその製造方法および光学式情報再生装置
US10/104,931 US6865201B2 (en) 2001-03-23 2002-03-22 Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001085248A JP2002289955A (ja) 2001-03-23 2001-03-23 半導体レーザ素子とその製造方法および光学式情報再生装置

Publications (2)

Publication Number Publication Date
JP2002289955A JP2002289955A (ja) 2002-10-04
JP2002289955A5 true JP2002289955A5 (enExample) 2007-12-27

Family

ID=18940792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001085248A Pending JP2002289955A (ja) 2001-03-23 2001-03-23 半導体レーザ素子とその製造方法および光学式情報再生装置

Country Status (2)

Country Link
US (1) US6865201B2 (enExample)
JP (1) JP2002289955A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017791A (ja) * 2001-07-03 2003-01-17 Sharp Corp 窒化物半導体素子及びこの窒化物半導体素子の製造方法
US6987281B2 (en) * 2003-02-13 2006-01-17 Cree, Inc. Group III nitride contact structures for light emitting devices
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
KR101283233B1 (ko) * 2007-06-25 2013-07-11 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP5225639B2 (ja) * 2007-09-06 2013-07-03 浜松ホトニクス株式会社 半導体レーザ素子の製造方法
DE102017119931A1 (de) * 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450586A (en) * 1987-08-21 1989-02-27 Fuji Electric Co Ltd Semiconductor laser
JP2910811B2 (ja) * 1993-03-25 1999-06-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体ウエハーの切断方法
US6005258A (en) * 1994-03-22 1999-12-21 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
ID16181A (id) * 1995-12-25 1997-09-11 Sony Corp Alat semi konduktor dengan permukaan terbelah
JPH1027939A (ja) * 1996-07-11 1998-01-27 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH10209569A (ja) * 1997-01-16 1998-08-07 Hewlett Packard Co <Hp> ｐ型窒化物半導体装置とその製造方法
JP3223832B2 (ja) * 1997-02-24 2001-10-29 日亜化学工業株式会社 窒化物半導体素子及び半導体レーザダイオード
JPH11251266A (ja) * 1998-02-27 1999-09-17 Victor Co Of Japan Ltd 粘着シ−ト
JPH11251682A (ja) * 1998-03-04 1999-09-17 Hitachi Ltd 半導体光素子
JP3822976B2 (ja) * 1998-03-06 2006-09-20 ソニー株式会社 半導体装置およびその製造方法
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
TW488088B (en) * 2001-01-19 2002-05-21 South Epitaxy Corp Light emitting diode structure
TW492202B (en) * 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
TW515116B (en) * 2001-12-27 2002-12-21 South Epitaxy Corp Light emitting diode structure

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