JP2002305348A5 - - Google Patents
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- Publication number
- JP2002305348A5 JP2002305348A5 JP2002031984A JP2002031984A JP2002305348A5 JP 2002305348 A5 JP2002305348 A5 JP 2002305348A5 JP 2002031984 A JP2002031984 A JP 2002031984A JP 2002031984 A JP2002031984 A JP 2002031984A JP 2002305348 A5 JP2002305348 A5 JP 2002305348A5
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- layer
- semiconductor layer
- semiconductor laser
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002031984A JP4066317B2 (ja) | 1999-11-30 | 2002-02-08 | 半導体レーザ素子、その製造方法及び光ディスク装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33919599 | 1999-11-30 | ||
| JP11-339195 | 1999-11-30 | ||
| JP2002031984A JP4066317B2 (ja) | 1999-11-30 | 2002-02-08 | 半導体レーザ素子、その製造方法及び光ディスク装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000361161A Division JP3290646B2 (ja) | 1999-11-30 | 2000-11-28 | 半導体レーザ素子、その製造方法及び光ディスク装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002305348A JP2002305348A (ja) | 2002-10-18 |
| JP2002305348A5 true JP2002305348A5 (enExample) | 2005-10-06 |
| JP4066317B2 JP4066317B2 (ja) | 2008-03-26 |
Family
ID=26576358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002031984A Expired - Fee Related JP4066317B2 (ja) | 1999-11-30 | 2002-02-08 | 半導体レーザ素子、その製造方法及び光ディスク装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4066317B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004327581A (ja) | 2003-04-23 | 2004-11-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2005340625A (ja) * | 2004-05-28 | 2005-12-08 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
| JP4947912B2 (ja) * | 2005-03-28 | 2012-06-06 | 三洋電機株式会社 | 半導体レーザ素子 |
| JP2008277625A (ja) | 2007-05-01 | 2008-11-13 | Mitsubishi Electric Corp | 半導体発光素子 |
| JP7672824B2 (ja) * | 2021-01-13 | 2025-05-08 | キヤノン株式会社 | 電子機器およびその制御方法およびプログラムおよび記録媒体 |
-
2002
- 2002-02-08 JP JP2002031984A patent/JP4066317B2/ja not_active Expired - Fee Related
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