JP2003198065A5 - - Google Patents

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Publication number
JP2003198065A5
JP2003198065A5 JP2001393297A JP2001393297A JP2003198065A5 JP 2003198065 A5 JP2003198065 A5 JP 2003198065A5 JP 2001393297 A JP2001393297 A JP 2001393297A JP 2001393297 A JP2001393297 A JP 2001393297A JP 2003198065 A5 JP2003198065 A5 JP 2003198065A5
Authority
JP
Japan
Prior art keywords
light
active layer
insulating film
laser element
ridge structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001393297A
Other languages
English (en)
Japanese (ja)
Other versions
JP3989244B2 (ja
JP2003198065A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001393297A priority Critical patent/JP3989244B2/ja
Priority claimed from JP2001393297A external-priority patent/JP3989244B2/ja
Publication of JP2003198065A publication Critical patent/JP2003198065A/ja
Publication of JP2003198065A5 publication Critical patent/JP2003198065A5/ja
Application granted granted Critical
Publication of JP3989244B2 publication Critical patent/JP3989244B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2001393297A 2001-12-26 2001-12-26 窒化物半導体レーザ素子および光記録再生装置 Expired - Lifetime JP3989244B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001393297A JP3989244B2 (ja) 2001-12-26 2001-12-26 窒化物半導体レーザ素子および光記録再生装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001393297A JP3989244B2 (ja) 2001-12-26 2001-12-26 窒化物半導体レーザ素子および光記録再生装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007165831A Division JP2007329487A (ja) 2007-06-25 2007-06-25 レーザ素子および光記録再生装置

Publications (3)

Publication Number Publication Date
JP2003198065A JP2003198065A (ja) 2003-07-11
JP2003198065A5 true JP2003198065A5 (enExample) 2005-05-26
JP3989244B2 JP3989244B2 (ja) 2007-10-10

Family

ID=27600328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001393297A Expired - Lifetime JP3989244B2 (ja) 2001-12-26 2001-12-26 窒化物半導体レーザ素子および光記録再生装置

Country Status (1)

Country Link
JP (1) JP3989244B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4635418B2 (ja) * 2003-07-31 2011-02-23 日亜化学工業株式会社 半導体装置の製造方法及び半導体装置
JP4551121B2 (ja) * 2004-05-24 2010-09-22 シャープ株式会社 半導体レーザ装置
JP4956928B2 (ja) * 2004-09-28 2012-06-20 日亜化学工業株式会社 半導体装置
KR100819029B1 (ko) * 2006-07-28 2008-04-02 한국전자통신연구원 급격한 턴온 특성을 갖는 레이저 다이오드, 그 레이저다이오드를 이용한 광송신 장치, 및 그 광송신 장치를포함한 광통신 장치
JP2009129919A (ja) * 2007-11-19 2009-06-11 Panasonic Corp 半導体レーザ装置及びその製造方法
DE102008012859B4 (de) 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
US8073031B2 (en) * 2008-03-03 2011-12-06 Sharp Kabushiki Kaisha Laser diode with improved heat dissipation
CN112152086B (zh) * 2020-11-24 2021-03-09 度亘激光技术（苏州）有限公司 半导体器件的制造方法、半导体器件及半导体组件

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