JP3989244B2 - 窒化物半導体レーザ素子および光記録再生装置 - Google Patents

窒化物半導体レーザ素子および光記録再生装置 Download PDF

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JP3989244B2
JP3989244B2 JP2001393297A JP2001393297A JP3989244B2 JP 3989244 B2 JP3989244 B2 JP 3989244B2 JP 2001393297 A JP2001393297 A JP 2001393297A JP 2001393297 A JP2001393297 A JP 2001393297A JP 3989244 B2 JP3989244 B2 JP 3989244B2
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light
laser
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ridge structure
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JP2003198065A5 (enExample
JP2003198065A (ja
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智輝 大野
茂稔 伊藤
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Sharp Corp
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Sharp Corp
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JP2001393297A 2001-12-26 2001-12-26 窒化物半導体レーザ素子および光記録再生装置 Expired - Lifetime JP3989244B2 (ja)

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JP2001393297A JP3989244B2 (ja) 2001-12-26 2001-12-26 窒化物半導体レーザ素子および光記録再生装置

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JP2001393297A JP3989244B2 (ja) 2001-12-26 2001-12-26 窒化物半導体レーザ素子および光記録再生装置

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JP2007165831A Division JP2007329487A (ja) 2007-06-25 2007-06-25 レーザ素子および光記録再生装置

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JP2003198065A JP2003198065A (ja) 2003-07-11
JP2003198065A5 JP2003198065A5 (enExample) 2005-05-26
JP3989244B2 true JP3989244B2 (ja) 2007-10-10

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4635418B2 (ja) * 2003-07-31 2011-02-23 日亜化学工業株式会社 半導体装置の製造方法及び半導体装置
JP4551121B2 (ja) * 2004-05-24 2010-09-22 シャープ株式会社 半導体レーザ装置
JP4956928B2 (ja) * 2004-09-28 2012-06-20 日亜化学工業株式会社 半導体装置
KR100819029B1 (ko) * 2006-07-28 2008-04-02 한국전자통신연구원 급격한 턴온 특성을 갖는 레이저 다이오드, 그 레이저다이오드를 이용한 광송신 장치, 및 그 광송신 장치를포함한 광통신 장치
JP2009129919A (ja) * 2007-11-19 2009-06-11 Panasonic Corp 半導体レーザ装置及びその製造方法
DE102008012859B4 (de) 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
US8073031B2 (en) * 2008-03-03 2011-12-06 Sharp Kabushiki Kaisha Laser diode with improved heat dissipation
CN112152086B (zh) * 2020-11-24 2021-03-09 度亘激光技术（苏州）有限公司 半导体器件的制造方法、半导体器件及半导体组件

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