JP2002216493A - 救済修正回路および半導体記憶装置 - Google Patents
救済修正回路および半導体記憶装置Info
- Publication number
- JP2002216493A JP2002216493A JP2001015000A JP2001015000A JP2002216493A JP 2002216493 A JP2002216493 A JP 2002216493A JP 2001015000 A JP2001015000 A JP 2001015000A JP 2001015000 A JP2001015000 A JP 2001015000A JP 2002216493 A JP2002216493 A JP 2002216493A
- Authority
- JP
- Japan
- Prior art keywords
- switching
- switching element
- correction circuit
- repair
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001015000A JP2002216493A (ja) | 2001-01-23 | 2001-01-23 | 救済修正回路および半導体記憶装置 |
| US09/912,537 US6469943B2 (en) | 2001-01-23 | 2001-07-26 | Switching circuit and semiconductor device |
| KR10-2001-0057085A KR100445500B1 (ko) | 2001-01-23 | 2001-09-17 | 스위칭 회로 |
| TW090123578A TW511245B (en) | 2001-01-23 | 2001-09-25 | Switching circuit and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001015000A JP2002216493A (ja) | 2001-01-23 | 2001-01-23 | 救済修正回路および半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002216493A true JP2002216493A (ja) | 2002-08-02 |
| JP2002216493A5 JP2002216493A5 (https=) | 2008-01-31 |
Family
ID=18881620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001015000A Pending JP2002216493A (ja) | 2001-01-23 | 2001-01-23 | 救済修正回路および半導体記憶装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6469943B2 (https=) |
| JP (1) | JP2002216493A (https=) |
| KR (1) | KR100445500B1 (https=) |
| TW (1) | TW511245B (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006228330A (ja) * | 2005-02-17 | 2006-08-31 | Toshiba Corp | 半導体記憶装置 |
| JP2006294085A (ja) * | 2005-04-06 | 2006-10-26 | Toshiba Corp | 半導体装置 |
| JP2007234155A (ja) * | 2006-03-02 | 2007-09-13 | Sony Corp | 半導体記憶装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003203496A (ja) * | 2002-01-08 | 2003-07-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62217497A (ja) * | 1986-02-27 | 1987-09-24 | Fujitsu Ltd | 半導体記憶装置 |
| JPH02146195A (ja) * | 1988-11-28 | 1990-06-05 | Nec Corp | 半導体記憶装置 |
| JPH02198100A (ja) * | 1989-01-26 | 1990-08-06 | Nec Corp | 半導体メモリ装置 |
| JPH03203900A (ja) * | 1989-12-29 | 1991-09-05 | Nec Corp | 半導体記憶装置 |
| JPH05166394A (ja) * | 1991-12-19 | 1993-07-02 | Oki Micro Design Miyazaki:Kk | 半導体集積回路 |
| JPH06150689A (ja) * | 1992-11-10 | 1994-05-31 | Nec Corp | 半導体メモリ |
| JPH09213097A (ja) * | 1996-02-07 | 1997-08-15 | Hitachi Ltd | ヒューズ装置及びそれを用いた半導体集積回路装置 |
| JPH10228797A (ja) * | 1996-12-12 | 1998-08-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62235750A (ja) | 1986-04-07 | 1987-10-15 | Nec Corp | 半導体集積回路 |
| JPH02310898A (ja) * | 1989-05-25 | 1990-12-26 | Nec Corp | メモリ回路 |
| JP2888034B2 (ja) * | 1991-06-27 | 1999-05-10 | 日本電気株式会社 | 半導体メモリ装置 |
| KR940007241B1 (ko) * | 1992-03-09 | 1994-08-10 | 삼성전자 주식회사 | 반도체 메모리 장치의 로우 리던던시장치 |
| JPH06216253A (ja) | 1993-01-19 | 1994-08-05 | Sony Corp | トリミング装置 |
| KR0140178B1 (ko) * | 1994-12-29 | 1998-07-15 | 김광호 | 반도체 메모리장치의 결함 셀 구제회로 및 방법 |
| KR0158484B1 (ko) * | 1995-01-28 | 1999-02-01 | 김광호 | 불휘발성 반도체 메모리의 행리던던씨 |
| JPH10335594A (ja) | 1997-05-29 | 1998-12-18 | New Japan Radio Co Ltd | 抵抗トリミング回路及びそのトリミング方法 |
| US6188618B1 (en) * | 1998-04-23 | 2001-02-13 | Kabushiki Kaisha Toshiba | Semiconductor device with flexible redundancy system |
| JPH11353893A (ja) * | 1998-06-08 | 1999-12-24 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP3749789B2 (ja) * | 1998-06-08 | 2006-03-01 | 株式会社東芝 | 半導体記憶装置 |
| JP2000123593A (ja) * | 1998-08-13 | 2000-04-28 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
-
2001
- 2001-01-23 JP JP2001015000A patent/JP2002216493A/ja active Pending
- 2001-07-26 US US09/912,537 patent/US6469943B2/en not_active Expired - Fee Related
- 2001-09-17 KR KR10-2001-0057085A patent/KR100445500B1/ko not_active Expired - Fee Related
- 2001-09-25 TW TW090123578A patent/TW511245B/zh active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62217497A (ja) * | 1986-02-27 | 1987-09-24 | Fujitsu Ltd | 半導体記憶装置 |
| JPH02146195A (ja) * | 1988-11-28 | 1990-06-05 | Nec Corp | 半導体記憶装置 |
| JPH02198100A (ja) * | 1989-01-26 | 1990-08-06 | Nec Corp | 半導体メモリ装置 |
| JPH03203900A (ja) * | 1989-12-29 | 1991-09-05 | Nec Corp | 半導体記憶装置 |
| JPH05166394A (ja) * | 1991-12-19 | 1993-07-02 | Oki Micro Design Miyazaki:Kk | 半導体集積回路 |
| JPH06150689A (ja) * | 1992-11-10 | 1994-05-31 | Nec Corp | 半導体メモリ |
| JPH09213097A (ja) * | 1996-02-07 | 1997-08-15 | Hitachi Ltd | ヒューズ装置及びそれを用いた半導体集積回路装置 |
| JPH10228797A (ja) * | 1996-12-12 | 1998-08-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006228330A (ja) * | 2005-02-17 | 2006-08-31 | Toshiba Corp | 半導体記憶装置 |
| JP2006294085A (ja) * | 2005-04-06 | 2006-10-26 | Toshiba Corp | 半導体装置 |
| JP2007234155A (ja) * | 2006-03-02 | 2007-09-13 | Sony Corp | 半導体記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100445500B1 (ko) | 2004-08-21 |
| US6469943B2 (en) | 2002-10-22 |
| US20020097083A1 (en) | 2002-07-25 |
| KR20020062677A (ko) | 2002-07-29 |
| TW511245B (en) | 2002-11-21 |
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| JPH03716B2 (https=) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
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| A711 | Notification of change in applicant |
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| A977 | Report on retrieval |
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| A131 | Notification of reasons for refusal |
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| A02 | Decision of refusal |
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