JP2002050595A - 研磨方法、配線形成方法及び半導体装置の製造方法 - Google Patents

研磨方法、配線形成方法及び半導体装置の製造方法

Info

Publication number
JP2002050595A
JP2002050595A JP2000242750A JP2000242750A JP2002050595A JP 2002050595 A JP2002050595 A JP 2002050595A JP 2000242750 A JP2000242750 A JP 2000242750A JP 2000242750 A JP2000242750 A JP 2000242750A JP 2002050595 A JP2002050595 A JP 2002050595A
Authority
JP
Japan
Prior art keywords
polishing
film
acid
polishing liquid
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000242750A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002050595A5 (enExample
Inventor
Seiichi Kondo
誠一 近藤
Noriyuki Sakuma
憲之 佐久間
Yoshio Honma
喜夫 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000242750A priority Critical patent/JP2002050595A/ja
Priority to US09/828,919 priority patent/US6562719B2/en
Priority to TW090109486A priority patent/TW503476B/zh
Priority to KR1020010021948A priority patent/KR20020012113A/ko
Publication of JP2002050595A publication Critical patent/JP2002050595A/ja
Priority to US10/396,410 priority patent/US6750128B2/en
Priority to US10/793,735 priority patent/US20040171264A1/en
Publication of JP2002050595A5 publication Critical patent/JP2002050595A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000242750A 2000-08-04 2000-08-04 研磨方法、配線形成方法及び半導体装置の製造方法 Pending JP2002050595A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000242750A JP2002050595A (ja) 2000-08-04 2000-08-04 研磨方法、配線形成方法及び半導体装置の製造方法
US09/828,919 US6562719B2 (en) 2000-08-04 2001-04-10 Methods of polishing, interconnect-fabrication, and producing semiconductor devices
TW090109486A TW503476B (en) 2000-08-04 2001-04-20 Methods of polishing, interconnect-fabrication and producing semiconductor devices
KR1020010021948A KR20020012113A (ko) 2000-08-04 2001-04-24 연마방법, 배선형성방법 및 반도체 장치의 제조방법
US10/396,410 US6750128B2 (en) 2000-08-04 2003-03-26 Methods of polishing, interconnect-fabrication, and producing semiconductor devices
US10/793,735 US20040171264A1 (en) 2000-08-04 2004-03-08 Methods of polishing, interconnect-fabrication, and producing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000242750A JP2002050595A (ja) 2000-08-04 2000-08-04 研磨方法、配線形成方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002050595A true JP2002050595A (ja) 2002-02-15
JP2002050595A5 JP2002050595A5 (enExample) 2004-12-24

Family

ID=18733721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000242750A Pending JP2002050595A (ja) 2000-08-04 2000-08-04 研磨方法、配線形成方法及び半導体装置の製造方法

Country Status (4)

Country Link
US (3) US6562719B2 (enExample)
JP (1) JP2002050595A (enExample)
KR (1) KR20020012113A (enExample)
TW (1) TW503476B (enExample)

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JP2004067897A (ja) * 2002-08-07 2004-03-04 Kao Corp ロールオフ低減剤
JP2004311653A (ja) * 2003-04-04 2004-11-04 Rodel Nitta Co 水性コンディショニング液およびコンディショニング法
JP2006080388A (ja) * 2004-09-10 2006-03-23 Nitta Haas Inc 金属研磨用組成物
CN1307691C (zh) * 2002-09-19 2007-03-28 飞索有限责任公司 制造半导体器件的方法
WO2009008431A1 (ja) * 2007-07-10 2009-01-15 Hitachi Chemical Co., Ltd. 金属膜用研磨液及び研磨方法
WO2009128430A1 (ja) * 2008-04-15 2009-10-22 日立化成工業株式会社 金属膜用研磨液及びこれを用いた研磨方法
JP2011517507A (ja) * 2008-03-21 2011-06-09 キャボット マイクロエレクトロニクス コーポレイション ダマシン構造におけるアルミニウム／銅及びチタンを研磨するための組成物
US8288282B2 (en) 2007-07-30 2012-10-16 Hitachi Chemical Co., Ltd. Polishing liquid for metal and method of polishing
JP2014033238A (ja) * 2009-02-16 2014-02-20 Hitachi Chemical Co Ltd 研磨剤
US8696929B2 (en) 2002-04-30 2014-04-15 Hitachi Chemical Co., Ltd. Polishing slurry and polishing method
US8791019B2 (en) 2005-12-27 2014-07-29 Hitachi Chemical Company, Ltd. Metal polishing slurry and method of polishing a film to be polished
JPWO2016047714A1 (ja) * 2014-09-26 2017-07-06 株式会社フジミインコーポレーテッド 研磨用組成物
JP2018019075A (ja) * 2016-07-01 2018-02-01 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー バリア化学機械平坦化のための添加剤
WO2020129737A1 (ja) * 2018-12-18 2020-06-25 株式会社トクヤマ シリコンエッチング液
US11254840B2 (en) 2019-03-13 2022-02-22 Samsung Electronics Co., Ltd. Polishing slurry and method of manufacturing semiconductor device

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US20020016073A1 (en) 2002-02-07
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US20040171264A1 (en) 2004-09-02
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