TW503476B - Methods of polishing, interconnect-fabrication and producing semiconductor devices - Google Patents

Methods of polishing, interconnect-fabrication and producing semiconductor devices Download PDF

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Publication number
TW503476B
TW503476B TW090109486A TW90109486A TW503476B TW 503476 B TW503476 B TW 503476B TW 090109486 A TW090109486 A TW 090109486A TW 90109486 A TW90109486 A TW 90109486A TW 503476 B TW503476 B TW 503476B
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TW
Taiwan
Prior art keywords
grinding
polishing
solution
acid
film
Prior art date
Application number
TW090109486A
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English (en)
Chinese (zh)
Inventor
Seiichi Kondo
Noriyuki Sakuma
Original Assignee
Hitachi Ltd
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Filing date
Publication date
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Publication of TW503476B publication Critical patent/TW503476B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW090109486A 2000-08-04 2001-04-20 Methods of polishing, interconnect-fabrication and producing semiconductor devices TW503476B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000242750A JP2002050595A (ja) 2000-08-04 2000-08-04 研磨方法、配線形成方法及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW503476B true TW503476B (en) 2002-09-21

Family

ID=18733721

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090109486A TW503476B (en) 2000-08-04 2001-04-20 Methods of polishing, interconnect-fabrication and producing semiconductor devices

Country Status (4)

Country Link
US (3) US6562719B2 (enExample)
JP (1) JP2002050595A (enExample)
KR (1) KR20020012113A (enExample)
TW (1) TW503476B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI615508B (zh) * 2013-11-04 2018-02-21 東友精細化工有限公司 用於銅基金屬膜的蝕刻劑組合物、液晶顯示器用陣列基板的製造方法及液晶顯示器用陣列基板
TWI677904B (zh) * 2017-09-29 2019-11-21 台灣積體電路製造股份有限公司 半導體裝置及其形成方法

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7232529B1 (en) * 1999-08-26 2007-06-19 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US7160432B2 (en) 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6811680B2 (en) 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US7242044B2 (en) * 2001-08-28 2007-07-10 Tdk Corporation Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device, and thin-film multilayer capacitor
WO2003036705A1 (en) * 2001-10-26 2003-05-01 Asahi Glass Company, Limited Polishing compound, method for production thereof and polishing method
JP2003163214A (ja) * 2001-11-26 2003-06-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20070295611A1 (en) * 2001-12-21 2007-12-27 Liu Feng Q Method and composition for polishing a substrate
ATE403936T1 (de) * 2002-04-30 2008-08-15 Hitachi Chemical Co Ltd Polierfluid und polierverfahren
JP3875156B2 (ja) * 2002-08-07 2007-01-31 花王株式会社 ロールオフ低減剤
JP4164324B2 (ja) * 2002-09-19 2008-10-15 スパンション エルエルシー 半導体装置の製造方法
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US7419768B2 (en) * 2002-11-18 2008-09-02 Micron Technology, Inc. Methods of fabricating integrated circuitry
US7186305B2 (en) * 2002-11-26 2007-03-06 Donald Ferrier Process for improving the adhesion of polymeric materials to metal surfaces
US7148147B2 (en) * 2003-03-06 2006-12-12 J.G. Systems, Inc. CMP composition containing organic nitro compounds
IL154782A0 (en) * 2003-03-06 2003-10-31 J G Systems Inc Chemical-mechanical polishing composition containing organic nitro compounds
US7273095B2 (en) * 2003-03-11 2007-09-25 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nanoengineered thermal materials based on carbon nanotube array composites
US6933224B2 (en) * 2003-03-28 2005-08-23 Micron Technology, Inc. Method of fabricating integrated circuitry
JP4526777B2 (ja) * 2003-04-04 2010-08-18 ニッタ・ハース株式会社 水性コンディショニング液およびコンディショニング法
US7188630B2 (en) * 2003-05-07 2007-03-13 Freescale Semiconductor, Inc. Method to passivate conductive surfaces during semiconductor processing
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
WO2005014753A1 (en) * 2003-07-09 2005-02-17 Dynea Chemicals Oy Non-polymeric organic particles for chemical mechanical planarization
US7348281B2 (en) * 2003-09-19 2008-03-25 Brewer Science Inc. Method of filling structures for forming via-first dual damascene interconnects
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
KR100596865B1 (ko) * 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
JP2005303062A (ja) * 2004-04-13 2005-10-27 Rubycon Corp 電解コンデンサ駆動用電解液及び電解コンデンサ
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2006080388A (ja) * 2004-09-10 2006-03-23 Nitta Haas Inc 金属研磨用組成物
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
JP2006135072A (ja) * 2004-11-05 2006-05-25 Fujimi Inc 研磨方法
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US20060163206A1 (en) * 2005-01-25 2006-07-27 Irina Belov Novel polishing slurries and abrasive-free solutions having a multifunctional activator
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
WO2006081589A2 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Tungsten electroprocessing
US20060169674A1 (en) * 2005-01-28 2006-08-03 Daxin Mao Method and composition for polishing a substrate
US20060191871A1 (en) * 2005-02-25 2006-08-31 Sheng-Yu Chen Cmp slurry delivery system and method of mixing slurry thereof
DE602006002900D1 (de) * 2005-03-09 2008-11-13 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren, Kit zu deren Herstellung und chemisch-mechanisches Polierverfahren
CN100482416C (zh) * 2005-03-15 2009-04-29 联华电子股份有限公司 化学机械研磨机台的研磨液供应设备与研磨液混合方法
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
US20060223320A1 (en) * 2005-03-30 2006-10-05 Cooper Kevin E Polishing technique to minimize abrasive removal of material and composition therefor
US20060219663A1 (en) * 2005-03-31 2006-10-05 Applied Materials, Inc. Metal CMP process on one or more polishing stations using slurries with oxidizers
GB0507887D0 (en) * 2005-04-20 2005-05-25 Rohm & Haas Elect Mat Immersion method
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
US7939482B2 (en) * 2005-05-25 2011-05-10 Freescale Semiconductor, Inc. Cleaning solution for a semiconductor wafer
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP4738959B2 (ja) * 2005-09-28 2011-08-03 東芝モバイルディスプレイ株式会社 配線構造体の形成方法
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
TWI408194B (zh) * 2005-12-23 2013-09-11 Anji Microelectronics Co Ltd 拋光漿料
TWI415914B (zh) * 2005-12-23 2013-11-21 Anji Microelectronics Co Ltd 可去除光阻層之組合物
US8791019B2 (en) 2005-12-27 2014-07-29 Hitachi Chemical Company, Ltd. Metal polishing slurry and method of polishing a film to be polished
WO2007087830A1 (en) * 2006-02-03 2007-08-09 Freescale Semiconductor, Inc. Initiating chemical mechanical polishing with slurries having small abrasive particles
US8846149B2 (en) * 2006-02-21 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Delamination resistant semiconductor film and method for forming the same
JPWO2007116770A1 (ja) * 2006-04-03 2009-08-20 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
KR20070107242A (ko) * 2006-05-02 2007-11-07 주식회사 엘지화학 구리 몰리브덴 배선용 세정제
KR100852242B1 (ko) * 2006-08-16 2008-08-13 삼성전자주식회사 화학 기계적 연마용 슬러리 조성물, 이를 이용한 연마 방법및 반도체 메모리 소자의 제조 방법
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
US8501625B2 (en) 2007-07-10 2013-08-06 Hitachi Chemical Co., Ltd. Polishing liquid for metal film and polishing method
JP5327050B2 (ja) 2007-07-30 2013-10-30 日立化成株式会社 金属用研磨液及び研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US20090191468A1 (en) * 2008-01-29 2009-07-30 International Business Machines Corporation Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US20090250760A1 (en) * 2008-04-02 2009-10-08 International Business Machines Corporation Methods of forming high-k/metal gates for nfets and pfets
EP2273537A4 (en) 2008-04-15 2012-07-25 Hitachi Chemical Co Ltd POLISHING SOLUTION FOR METALLIC FILMS AND METHOD OF POLISHING USING THE SAME
US7975246B2 (en) * 2008-08-14 2011-07-05 International Business Machines Corporation MEEF reduction by elongation of square shapes
JP5516426B2 (ja) * 2009-02-16 2014-06-11 日立化成株式会社 研磨剤及び研磨方法
MY163071A (en) * 2011-06-29 2017-08-15 Sanyo Chemical Ind Ltd Electronic material polishing liquid
US20140127901A1 (en) * 2012-11-08 2014-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k damage free integration scheme for copper interconnects
US9962801B2 (en) * 2014-01-07 2018-05-08 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for performing chemical mechanical planarization
WO2016047714A1 (ja) * 2014-09-26 2016-03-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US10157781B2 (en) * 2016-12-14 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure using polishing process
US10804370B2 (en) * 2017-03-15 2020-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US10443135B1 (en) 2018-05-11 2019-10-15 Macdermid Enthone Inc. Near neutral pH pickle on multi-metals
US20220041931A1 (en) * 2018-12-18 2022-02-10 Tokuyama Corporation Silicon Etching Liquid
KR102782857B1 (ko) 2019-03-13 2025-03-14 삼성전자주식회사 연마 슬러리 및 반도체 소자의 제조 방법
CN112792571B (zh) * 2020-12-31 2021-12-21 广州数控设备有限公司 自动研磨铲刮系统

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7111923A (enExample) * 1970-08-31 1972-03-02
JPS5221222A (en) 1975-08-13 1977-02-17 Mitsubishi Gas Chemical Co Chemical polishing solution for copper and its alloy
JPS5547382A (en) 1978-09-28 1980-04-03 Canon Inc Chemical polishing fluid
US4415460A (en) * 1979-07-30 1983-11-15 The Lummus Company Oxidation of organics in aqueous salt solutions
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US5084071A (en) 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
JP3378033B2 (ja) 1992-08-11 2003-02-17 三井金属鉱業株式会社 黄銅用化学研磨液
GB2279344B (en) * 1993-06-25 1997-08-13 Ciba Geigy Ag Carrier-bound ketocarboxylic acids as corrosion inhibitors
JPH0794455A (ja) 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd 配線の形成方法
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
KR19980032145A (ko) 1996-10-04 1998-07-25 포만제프리엘 알루미늄 구리 합금의 화학기계적 연마시 구리 도금을 방지하는 방법
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP2000315666A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI615508B (zh) * 2013-11-04 2018-02-21 東友精細化工有限公司 用於銅基金屬膜的蝕刻劑組合物、液晶顯示器用陣列基板的製造方法及液晶顯示器用陣列基板
TWI677904B (zh) * 2017-09-29 2019-11-21 台灣積體電路製造股份有限公司 半導體裝置及其形成方法
US10636701B2 (en) 2017-09-29 2020-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices using multiple planarization processes
US11121028B2 (en) 2017-09-29 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices formed using multiple planarization processes

Also Published As

Publication number Publication date
KR20020012113A (ko) 2002-02-15
US6750128B2 (en) 2004-06-15
US6562719B2 (en) 2003-05-13
US20020016073A1 (en) 2002-02-07
US20040171264A1 (en) 2004-09-02
US20030186497A1 (en) 2003-10-02
JP2002050595A (ja) 2002-02-15

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