JP2001332949A - 弾性表面波素子の製造方法 - Google Patents

弾性表面波素子の製造方法

Info

Publication number
JP2001332949A
JP2001332949A JP2000148394A JP2000148394A JP2001332949A JP 2001332949 A JP2001332949 A JP 2001332949A JP 2000148394 A JP2000148394 A JP 2000148394A JP 2000148394 A JP2000148394 A JP 2000148394A JP 2001332949 A JP2001332949 A JP 2001332949A
Authority
JP
Japan
Prior art keywords
wafer
acoustic wave
polishing
surface acoustic
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000148394A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001332949A5 (enExample
Inventor
Masaaki Sudo
正昭 須藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000148394A priority Critical patent/JP2001332949A/ja
Priority to KR10-2001-0026975A priority patent/KR100453083B1/ko
Publication of JP2001332949A publication Critical patent/JP2001332949A/ja
Publication of JP2001332949A5 publication Critical patent/JP2001332949A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2000148394A 2000-05-19 2000-05-19 弾性表面波素子の製造方法 Pending JP2001332949A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000148394A JP2001332949A (ja) 2000-05-19 2000-05-19 弾性表面波素子の製造方法
KR10-2001-0026975A KR100453083B1 (ko) 2000-05-19 2001-05-17 탄성표면파소자의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000148394A JP2001332949A (ja) 2000-05-19 2000-05-19 弾性表面波素子の製造方法

Publications (2)

Publication Number Publication Date
JP2001332949A true JP2001332949A (ja) 2001-11-30
JP2001332949A5 JP2001332949A5 (enExample) 2007-08-16

Family

ID=18654433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000148394A Pending JP2001332949A (ja) 2000-05-19 2000-05-19 弾性表面波素子の製造方法

Country Status (2)

Country Link
JP (1) JP2001332949A (enExample)
KR (1) KR100453083B1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017983A (ja) * 2001-06-28 2003-01-17 Kyocera Corp 弾性波装置用ウエハ及びそれを用いた弾性波装置
JP2008118558A (ja) * 2006-11-07 2008-05-22 Shin Etsu Chem Co Ltd 弾性表面波素子の製造方法
JP2012135854A (ja) * 2010-12-28 2012-07-19 Disco Corp リチウムタンタレートの研削方法
WO2014148648A1 (ja) * 2013-03-21 2014-09-25 日本碍子株式会社 弾性波素子用複合基板および弾性波素子
JP2015062958A (ja) * 2013-09-24 2015-04-09 株式会社ディスコ リチウムタンタレートウェーハの分割方法
JP2018042209A (ja) * 2016-09-09 2018-03-15 株式会社ディスコ 表面弾性波デバイスチップの製造方法
KR20190000308A (ko) 2017-06-22 2019-01-02 가부시기가이샤 디스코 피가공물의 가공 방법
WO2020040203A1 (ja) * 2018-08-21 2020-02-27 京セラ株式会社 弾性表面波素子用基板及びその製造方法
CN112152588A (zh) * 2020-09-25 2020-12-29 福建晶安光电有限公司 声表面波滤波器及声表面波滤波器用晶片的加工方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947822A (ja) * 1982-09-10 1984-03-17 Sumitomo Metal Mining Co Ltd 弾性表面波用基板の製造方法
JPH06310479A (ja) * 1993-04-26 1994-11-04 Katsuyo Tawara 板状ワークの面取り研磨および鏡面研磨方法
JPH076984A (ja) * 1993-06-18 1995-01-10 Toshiba Corp 単結晶ウェーハの製造方法
JPH07264001A (ja) * 1994-03-25 1995-10-13 Ngk Insulators Ltd 弾性表面波フィルタ装置
JPH09270396A (ja) * 1996-03-29 1997-10-14 Komatsu Electron Metals Co Ltd 半導体ウェハの製法
JPH1131670A (ja) * 1997-07-10 1999-02-02 Sumitomo Metal Ind Ltd 半導体基板の製造方法
JPH11219923A (ja) * 1998-02-03 1999-08-10 Hitachi Ltd 半導体ウェハおよび半導体ウェハの製造方法ならびに半導体装置の製造方法
JPH11284469A (ja) * 1998-03-31 1999-10-15 Toshiba Corp 弾性表面波基板の製造方法
JP2000082931A (ja) * 1998-09-07 2000-03-21 Fujitsu Ltd 圧電単結晶ウェーハとその製造方法と弾性表面波デバイス
JP2000091279A (ja) * 1998-09-09 2000-03-31 Shin Etsu Handotai Co Ltd 被鏡面研磨用半導体基板及び半導体基板の製造方法
JP2000138192A (ja) * 1998-08-28 2000-05-16 Kobe Precision Inc 半導体ウエハ基板の再生法および半導体ウエハ基板再生用研磨液

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970051957A (ko) * 1995-12-26 1997-07-29 이형도 단결정 웨이퍼의 가공 방법
JP3658454B2 (ja) * 1996-03-29 2005-06-08 コマツ電子金属株式会社 半導体ウェハの製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947822A (ja) * 1982-09-10 1984-03-17 Sumitomo Metal Mining Co Ltd 弾性表面波用基板の製造方法
JPH06310479A (ja) * 1993-04-26 1994-11-04 Katsuyo Tawara 板状ワークの面取り研磨および鏡面研磨方法
JPH076984A (ja) * 1993-06-18 1995-01-10 Toshiba Corp 単結晶ウェーハの製造方法
JPH07264001A (ja) * 1994-03-25 1995-10-13 Ngk Insulators Ltd 弾性表面波フィルタ装置
JPH09270396A (ja) * 1996-03-29 1997-10-14 Komatsu Electron Metals Co Ltd 半導体ウェハの製法
JPH1131670A (ja) * 1997-07-10 1999-02-02 Sumitomo Metal Ind Ltd 半導体基板の製造方法
JPH11219923A (ja) * 1998-02-03 1999-08-10 Hitachi Ltd 半導体ウェハおよび半導体ウェハの製造方法ならびに半導体装置の製造方法
JPH11284469A (ja) * 1998-03-31 1999-10-15 Toshiba Corp 弾性表面波基板の製造方法
JP2000138192A (ja) * 1998-08-28 2000-05-16 Kobe Precision Inc 半導体ウエハ基板の再生法および半導体ウエハ基板再生用研磨液
JP2000082931A (ja) * 1998-09-07 2000-03-21 Fujitsu Ltd 圧電単結晶ウェーハとその製造方法と弾性表面波デバイス
JP2000091279A (ja) * 1998-09-09 2000-03-31 Shin Etsu Handotai Co Ltd 被鏡面研磨用半導体基板及び半導体基板の製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017983A (ja) * 2001-06-28 2003-01-17 Kyocera Corp 弾性波装置用ウエハ及びそれを用いた弾性波装置
JP2008118558A (ja) * 2006-11-07 2008-05-22 Shin Etsu Chem Co Ltd 弾性表面波素子の製造方法
JP2012135854A (ja) * 2010-12-28 2012-07-19 Disco Corp リチウムタンタレートの研削方法
CN105164919A (zh) * 2013-03-21 2015-12-16 日本碍子株式会社 弹性波元件用复合基板及弹性波元件
JP5668179B1 (ja) * 2013-03-21 2015-02-12 日本碍子株式会社 弾性波素子用複合基板および弾性波素子
WO2014148648A1 (ja) * 2013-03-21 2014-09-25 日本碍子株式会社 弾性波素子用複合基板および弾性波素子
US9438201B2 (en) 2013-03-21 2016-09-06 Ngk Insulators, Ltd. Composite substrates for acoustic wave elements, and acoustic wave elements
JP2015062958A (ja) * 2013-09-24 2015-04-09 株式会社ディスコ リチウムタンタレートウェーハの分割方法
JP2018042209A (ja) * 2016-09-09 2018-03-15 株式会社ディスコ 表面弾性波デバイスチップの製造方法
KR20190000308A (ko) 2017-06-22 2019-01-02 가부시기가이샤 디스코 피가공물의 가공 방법
WO2020040203A1 (ja) * 2018-08-21 2020-02-27 京セラ株式会社 弾性表面波素子用基板及びその製造方法
JPWO2020040203A1 (ja) * 2018-08-21 2021-09-02 京セラ株式会社 弾性表面波素子用基板及びその製造方法
JP7019052B2 (ja) 2018-08-21 2022-02-14 京セラ株式会社 弾性表面波素子用基板及びその製造方法
CN112152588A (zh) * 2020-09-25 2020-12-29 福建晶安光电有限公司 声表面波滤波器及声表面波滤波器用晶片的加工方法
CN112152588B (zh) * 2020-09-25 2024-01-30 福建晶安光电有限公司 声表面波滤波器及声表面波滤波器用晶片的加工方法

Also Published As

Publication number Publication date
KR100453083B1 (ko) 2004-10-15
KR20010105249A (ko) 2001-11-28

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