KR100453083B1 - 탄성표면파소자의 제조방법 - Google Patents

탄성표면파소자의 제조방법 Download PDF

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Publication number
KR100453083B1
KR100453083B1 KR10-2001-0026975A KR20010026975A KR100453083B1 KR 100453083 B1 KR100453083 B1 KR 100453083B1 KR 20010026975 A KR20010026975 A KR 20010026975A KR 100453083 B1 KR100453083 B1 KR 100453083B1
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KR
South Korea
Prior art keywords
wafer
acoustic wave
surface acoustic
polishing
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0026975A
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English (en)
Korean (ko)
Other versions
KR20010105249A (ko
Inventor
수도마사아키
Original Assignee
가부시끼가이샤 도시바
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Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20010105249A publication Critical patent/KR20010105249A/ko
Application granted granted Critical
Publication of KR100453083B1 publication Critical patent/KR100453083B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR10-2001-0026975A 2000-05-19 2001-05-17 탄성표면파소자의 제조방법 Expired - Fee Related KR100453083B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000148394A JP2001332949A (ja) 2000-05-19 2000-05-19 弾性表面波素子の製造方法
JP2000-148394 2000-05-19

Publications (2)

Publication Number Publication Date
KR20010105249A KR20010105249A (ko) 2001-11-28
KR100453083B1 true KR100453083B1 (ko) 2004-10-15

Family

ID=18654433

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0026975A Expired - Fee Related KR100453083B1 (ko) 2000-05-19 2001-05-17 탄성표면파소자의 제조방법

Country Status (2)

Country Link
JP (1) JP2001332949A (enExample)
KR (1) KR100453083B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017983A (ja) * 2001-06-28 2003-01-17 Kyocera Corp 弾性波装置用ウエハ及びそれを用いた弾性波装置
JP5068511B2 (ja) * 2006-11-07 2012-11-07 信越化学工業株式会社 弾性表面波素子の製造方法
JP2012135854A (ja) * 2010-12-28 2012-07-19 Disco Corp リチウムタンタレートの研削方法
CN105164919B (zh) * 2013-03-21 2017-04-26 日本碍子株式会社 弹性波元件用复合基板及弹性波元件
JP2015062958A (ja) * 2013-09-24 2015-04-09 株式会社ディスコ リチウムタンタレートウェーハの分割方法
JP2018042209A (ja) * 2016-09-09 2018-03-15 株式会社ディスコ 表面弾性波デバイスチップの製造方法
JP6906845B2 (ja) 2017-06-22 2021-07-21 株式会社ディスコ 被加工物の加工方法
KR102508006B1 (ko) * 2018-08-21 2023-03-09 교세라 가부시키가이샤 탄성 표면파 소자용 기판 및 그 제조 방법
CN112152588B (zh) * 2020-09-25 2024-01-30 福建晶安光电有限公司 声表面波滤波器及声表面波滤波器用晶片的加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970051957A (ko) * 1995-12-26 1997-07-29 이형도 단결정 웨이퍼의 가공 방법
JPH09270397A (ja) * 1996-03-29 1997-10-14 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JPH11284469A (ja) * 1998-03-31 1999-10-15 Toshiba Corp 弾性表面波基板の製造方法
JP2000082931A (ja) * 1998-09-07 2000-03-21 Fujitsu Ltd 圧電単結晶ウェーハとその製造方法と弾性表面波デバイス

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947822A (ja) * 1982-09-10 1984-03-17 Sumitomo Metal Mining Co Ltd 弾性表面波用基板の製造方法
JP3390842B2 (ja) * 1993-04-26 2003-03-31 勝代 田原 板状ワークの面取り研磨および鏡面研磨方法
JP3286020B2 (ja) * 1993-06-18 2002-05-27 株式会社東芝 単結晶ウェーハの製造方法
JPH07264001A (ja) * 1994-03-25 1995-10-13 Ngk Insulators Ltd 弾性表面波フィルタ装置
JPH09270396A (ja) * 1996-03-29 1997-10-14 Komatsu Electron Metals Co Ltd 半導体ウェハの製法
JPH1131670A (ja) * 1997-07-10 1999-02-02 Sumitomo Metal Ind Ltd 半導体基板の製造方法
JPH11219923A (ja) * 1998-02-03 1999-08-10 Hitachi Ltd 半導体ウェハおよび半導体ウェハの製造方法ならびに半導体装置の製造方法
JP3668647B2 (ja) * 1998-08-28 2005-07-06 コウベ プレシジョン インク 半導体ウエハ基板の再生法および半導体ウエハ基板再生用研磨液
JP3555465B2 (ja) * 1998-09-09 2004-08-18 信越半導体株式会社 半導体基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970051957A (ko) * 1995-12-26 1997-07-29 이형도 단결정 웨이퍼의 가공 방법
JPH09270397A (ja) * 1996-03-29 1997-10-14 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JPH11284469A (ja) * 1998-03-31 1999-10-15 Toshiba Corp 弾性表面波基板の製造方法
JP2000082931A (ja) * 1998-09-07 2000-03-21 Fujitsu Ltd 圧電単結晶ウェーハとその製造方法と弾性表面波デバイス

Also Published As

Publication number Publication date
JP2001332949A (ja) 2001-11-30
KR20010105249A (ko) 2001-11-28

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