JP2001319946A5 - - Google Patents
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- Publication number
- JP2001319946A5 JP2001319946A5 JP2001085103A JP2001085103A JP2001319946A5 JP 2001319946 A5 JP2001319946 A5 JP 2001319946A5 JP 2001085103 A JP2001085103 A JP 2001085103A JP 2001085103 A JP2001085103 A JP 2001085103A JP 2001319946 A5 JP2001319946 A5 JP 2001319946A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- layer
- barrier
- copper
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 239000010410 layer Substances 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19210800P | 2000-03-24 | 2000-03-24 | |
| US60/192108 | 2000-03-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001319946A JP2001319946A (ja) | 2001-11-16 |
| JP2001319946A5 true JP2001319946A5 (enExample) | 2008-05-15 |
Family
ID=22708278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001085103A Abandoned JP2001319946A (ja) | 2000-03-24 | 2001-03-23 | 銅電極集積回路のためのワイヤ・ボンデイング構造及びその方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6800555B2 (enExample) |
| EP (1) | EP1139413B1 (enExample) |
| JP (1) | JP2001319946A (enExample) |
| KR (1) | KR100741592B1 (enExample) |
| CN (1) | CN1245272C (enExample) |
| DE (1) | DE60109339T2 (enExample) |
Families Citing this family (91)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6936531B2 (en) * | 1998-12-21 | 2005-08-30 | Megic Corporation | Process of fabricating a chip structure |
| US7405149B1 (en) | 1998-12-21 | 2008-07-29 | Megica Corporation | Post passivation method for semiconductor chip or wafer |
| US6495442B1 (en) | 2000-10-18 | 2002-12-17 | Magic Corporation | Post passivation interconnection schemes on top of the IC chips |
| US6965165B2 (en) | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
| US7381642B2 (en) | 2004-09-23 | 2008-06-03 | Megica Corporation | Top layers of metal for integrated circuits |
| US8021976B2 (en) | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US6898849B2 (en) | 2000-09-27 | 2005-05-31 | Texas Instruments Incorporated | Method for controlling wire balls in electronic bonding |
| US7271489B2 (en) | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
| US7372161B2 (en) * | 2000-10-18 | 2008-05-13 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
| US6683383B2 (en) | 2001-10-18 | 2004-01-27 | Intel Corporation | Wirebond structure and method to connect to a microelectronic die |
| US7932603B2 (en) | 2001-12-13 | 2011-04-26 | Megica Corporation | Chip structure and process for forming the same |
| EP2293325B1 (en) * | 2001-12-14 | 2013-06-12 | STMicroelectronics Srl | Semiconductor electronic device and method of manufacturing thereof |
| US20030127716A1 (en) * | 2002-01-09 | 2003-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under pads |
| US6616967B1 (en) * | 2002-04-15 | 2003-09-09 | Texas Instruments Incorporated | Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process |
| US6619538B1 (en) * | 2002-05-02 | 2003-09-16 | Texas Instruments Incorporated | Nickel plating process having controlled hydrogen concentration |
| JP4457587B2 (ja) * | 2002-09-05 | 2010-04-28 | セイコーエプソン株式会社 | 電子デバイス用基体の製造方法及び電子デバイスの製造方法 |
| US7288845B2 (en) * | 2002-10-15 | 2007-10-30 | Marvell Semiconductor, Inc. | Fabrication of wire bond pads over underlying active devices, passive devices and/or dielectric layers in integrated circuits |
| TWI221026B (en) * | 2002-12-06 | 2004-09-11 | Nat Univ Chung Cheng | Method of thermosonic wire bonding process for copper connection in a chip |
| WO2004079795A2 (en) | 2003-03-04 | 2004-09-16 | Rohm And Haas Electronic Materials, L.L.C. | Coaxial waveguide microstructures and methods of formation thereof |
| US7319277B2 (en) * | 2003-05-08 | 2008-01-15 | Megica Corporation | Chip structure with redistribution traces |
| US6969638B2 (en) * | 2003-06-27 | 2005-11-29 | Texas Instruments Incorporated | Low cost substrate for an integrated circuit device with bondpads free of plated gold |
| US20050067382A1 (en) * | 2003-09-26 | 2005-03-31 | Gary Gillotti | Fine pitch electronic flame-off wand electrode |
| US7459790B2 (en) * | 2003-10-15 | 2008-12-02 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
| US7394161B2 (en) | 2003-12-08 | 2008-07-01 | Megica Corporation | Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto |
| US20050215048A1 (en) * | 2004-03-23 | 2005-09-29 | Lei Li | Structure and method for contact pads having an overcoat-protected bondable metal plug over copper-metallized integrated circuits |
| TWI283443B (en) | 2004-07-16 | 2007-07-01 | Megica Corp | Post-passivation process and process of forming a polymer layer on the chip |
| GB2417127A (en) * | 2004-08-12 | 2006-02-15 | Vetco Gray Controls Ltd | Surface metallization of contact pads |
| US7833896B2 (en) * | 2004-09-23 | 2010-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Aluminum cap for reducing scratch and wire-bond bridging of bond pads |
| DE102004047522B3 (de) * | 2004-09-28 | 2006-04-06 | Infineon Technologies Ag | Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben |
| US7521805B2 (en) * | 2004-10-12 | 2009-04-21 | Megica Corp. | Post passivation interconnection schemes on top of the IC chips |
| TWI269420B (en) | 2005-05-03 | 2006-12-21 | Megica Corp | Stacked chip package and process thereof |
| US7216794B2 (en) | 2005-06-09 | 2007-05-15 | Texas Instruments Incorporated | Bond capillary design for ribbon wire bonding |
| US7326640B2 (en) * | 2005-07-13 | 2008-02-05 | National Chung Cheng University | Method of realizing thermosonic wire bonding between metal wires and copper pads by depositing a thin film to surface of semiconductor chip with copper pads |
| US7413974B2 (en) * | 2005-08-04 | 2008-08-19 | Texas Instruments Incorporated | Copper-metallized integrated circuits having electroless thick copper bond pads |
| US7947978B2 (en) * | 2005-12-05 | 2011-05-24 | Megica Corporation | Semiconductor chip with bond area |
| JP4793006B2 (ja) * | 2006-02-09 | 2011-10-12 | ソニー株式会社 | 半導体装置及びその製造方法 |
| US7656045B2 (en) * | 2006-02-23 | 2010-02-02 | Freescale Semiconductor, Inc. | Cap layer for an aluminum copper bond pad |
| US8344524B2 (en) * | 2006-03-07 | 2013-01-01 | Megica Corporation | Wire bonding method for preventing polymer cracking |
| US7800228B2 (en) * | 2006-05-17 | 2010-09-21 | International Business Machines Corporation | Reliable via contact interconnect structure |
| US8420520B2 (en) * | 2006-05-18 | 2013-04-16 | Megica Corporation | Non-cyanide gold electroplating for fine-line gold traces and gold pads |
| US8421227B2 (en) * | 2006-06-28 | 2013-04-16 | Megica Corporation | Semiconductor chip structure |
| US7960825B2 (en) * | 2006-09-06 | 2011-06-14 | Megica Corporation | Chip package and method for fabricating the same |
| DE102006044691B4 (de) * | 2006-09-22 | 2012-06-21 | Infineon Technologies Ag | Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements |
| KR100833187B1 (ko) * | 2006-11-02 | 2008-05-28 | 삼성전자주식회사 | 반도체 패키지의 와이어 본딩방법 |
| KR100843705B1 (ko) * | 2006-11-17 | 2008-07-04 | 삼성전자주식회사 | 금속 범프를 갖는 반도체 칩 패키지 및 그 제조방법 |
| US20080116077A1 (en) * | 2006-11-21 | 2008-05-22 | M/A-Com, Inc. | System and method for solder bump plating |
| CN101274734A (zh) | 2006-12-30 | 2008-10-01 | 罗门哈斯电子材料有限公司 | 三维微结构及其形成方法 |
| US8193636B2 (en) | 2007-03-13 | 2012-06-05 | Megica Corporation | Chip assembly with interconnection by metal bump |
| US7898356B2 (en) | 2007-03-20 | 2011-03-01 | Nuvotronics, Llc | Coaxial transmission line microstructures and methods of formation thereof |
| KR101593686B1 (ko) | 2007-03-20 | 2016-02-12 | 누보트로닉스, 엘.엘.씨 | 일체화된 전자 요소들 및 이들의 형성 방법 |
| TWI347643B (en) | 2007-06-13 | 2011-08-21 | Advanced Semiconductor Eng | Under bump metallurgy structure and die structure using the same and method of manufacturing die structure |
| US7911061B2 (en) * | 2007-06-25 | 2011-03-22 | Infineon Technologies Ag | Semiconductor device |
| US8030775B2 (en) | 2007-08-27 | 2011-10-04 | Megica Corporation | Wirebond over post passivation thick metal |
| DE102007046556A1 (de) * | 2007-09-28 | 2009-04-02 | Infineon Technologies Austria Ag | Halbleiterbauelement mit Kupfermetallisierungen |
| US8357998B2 (en) * | 2009-02-09 | 2013-01-22 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
| US20110123783A1 (en) | 2009-11-23 | 2011-05-26 | David Sherrer | Multilayer build processses and devices thereof |
| US8917150B2 (en) * | 2010-01-22 | 2014-12-23 | Nuvotronics, Llc | Waveguide balun having waveguide structures disposed over a ground plane and having probes located in channels |
| US8717124B2 (en) * | 2010-01-22 | 2014-05-06 | Nuvotronics, Llc | Thermal management |
| US8394713B2 (en) * | 2010-02-12 | 2013-03-12 | Freescale Semiconductor, Inc. | Method of improving adhesion of bond pad over pad metallization with a neighboring passivation layer by depositing a palladium layer |
| JP2011216771A (ja) | 2010-04-01 | 2011-10-27 | Rohm Co Ltd | 半導体装置およびその製造方法 |
| US8610274B2 (en) | 2010-09-14 | 2013-12-17 | Infineon Technologies Ag | Die structure, die arrangement and method of processing a die |
| KR101184796B1 (ko) * | 2010-12-29 | 2012-09-20 | 와이엠티 주식회사 | 기판 구조물 및 그 제조 방법 |
| CN102605359A (zh) * | 2011-01-25 | 2012-07-25 | 台湾上村股份有限公司 | 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺 |
| JP2012160554A (ja) * | 2011-01-31 | 2012-08-23 | Toshiba Corp | ボンディングワイヤの接合構造及び接合方法 |
| US8866300B1 (en) | 2011-06-05 | 2014-10-21 | Nuvotronics, Llc | Devices and methods for solder flow control in three-dimensional microstructures |
| US8814601B1 (en) | 2011-06-06 | 2014-08-26 | Nuvotronics, Llc | Batch fabricated microconnectors |
| FR2977383A1 (fr) * | 2011-06-30 | 2013-01-04 | St Microelectronics Grenoble 2 | Plot de reception d'un fil de cuivre |
| WO2013010108A1 (en) | 2011-07-13 | 2013-01-17 | Nuvotronics, Llc | Methods of fabricating electronic and mechanical structures |
| US8618677B2 (en) | 2012-04-06 | 2013-12-31 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
| US9325044B2 (en) | 2013-01-26 | 2016-04-26 | Nuvotronics, Inc. | Multi-layer digital elliptic filter and method |
| JP2013128145A (ja) * | 2013-03-11 | 2013-06-27 | Rohm Co Ltd | 半導体装置 |
| US9306254B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration |
| US9306255B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other |
| US9627344B2 (en) | 2013-04-04 | 2017-04-18 | Rohm Co., Ltd. | Semiconductor device |
| US10310009B2 (en) | 2014-01-17 | 2019-06-04 | Nuvotronics, Inc | Wafer scale test interface unit and contactors |
| MY171264A (en) | 2014-03-28 | 2019-10-07 | Nxp Usa Inc | Wire bonding method employing two scrub settings |
| KR102284123B1 (ko) | 2014-05-26 | 2021-07-30 | 삼성전기주식회사 | 회로기판, 전자부품 및 회로기판 제조방법 |
| US9368340B2 (en) * | 2014-06-02 | 2016-06-14 | Lam Research Corporation | Metallization of the wafer edge for optimized electroplating performance on resistive substrates |
| KR102207274B1 (ko) | 2014-06-11 | 2021-01-25 | 삼성전기주식회사 | 회로기판 및 회로기판 제조방법 |
| US9613843B2 (en) | 2014-10-13 | 2017-04-04 | General Electric Company | Power overlay structure having wirebonds and method of manufacturing same |
| US10847469B2 (en) | 2016-04-26 | 2020-11-24 | Cubic Corporation | CTE compensation for wafer-level and chip-scale packages and assemblies |
| US10511073B2 (en) | 2014-12-03 | 2019-12-17 | Cubic Corporation | Systems and methods for manufacturing stacked circuits and transmission lines |
| US9960130B2 (en) | 2015-02-06 | 2018-05-01 | UTAC Headquarters Pte. Ltd. | Reliable interconnect |
| JP6931869B2 (ja) * | 2016-10-21 | 2021-09-08 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
| JP6872991B2 (ja) * | 2017-06-29 | 2021-05-19 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US10424552B2 (en) * | 2017-09-20 | 2019-09-24 | Texas Instruments Incorporated | Alloy diffusion barrier layer |
| US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
| JP6937283B2 (ja) * | 2018-09-19 | 2021-09-22 | 株式会社東芝 | 半導体装置の製造方法 |
| US11270963B2 (en) | 2020-01-14 | 2022-03-08 | Sandisk Technologies Llc | Bonding pads including interfacial electromigration barrier layers and methods of making the same |
| CN112216675A (zh) * | 2020-09-11 | 2021-01-12 | 中国电子科技集团公司第十三研究所 | 微组装基板结构及芯片微组装方法 |
| US11676920B2 (en) * | 2021-01-26 | 2023-06-13 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
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|---|---|---|---|---|
| GB2184288A (en) * | 1985-12-16 | 1987-06-17 | Nat Semiconductor Corp | Oxidation inhibition of copper bonding pads using palladium |
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-
2001
- 2001-03-09 DE DE60109339T patent/DE60109339T2/de not_active Expired - Lifetime
- 2001-03-09 EP EP01000048A patent/EP1139413B1/en not_active Expired - Lifetime
- 2001-03-23 US US09/817,696 patent/US6800555B2/en not_active Expired - Lifetime
- 2001-03-23 JP JP2001085103A patent/JP2001319946A/ja not_active Abandoned
- 2001-03-23 KR KR1020010015120A patent/KR100741592B1/ko not_active Expired - Fee Related
- 2001-03-26 CN CNB011121351A patent/CN1245272C/zh not_active Expired - Fee Related
-
2004
- 2004-08-04 US US10/910,454 patent/US20050106851A1/en not_active Abandoned
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