JP2001156018A5 - - Google Patents

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Publication number
JP2001156018A5
JP2001156018A5 JP1999338846A JP33884699A JP2001156018A5 JP 2001156018 A5 JP2001156018 A5 JP 2001156018A5 JP 1999338846 A JP1999338846 A JP 1999338846A JP 33884699 A JP33884699 A JP 33884699A JP 2001156018 A5 JP2001156018 A5 JP 2001156018A5
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JP
Japan
Prior art keywords
laser
harmonic
cylindrical lens
laser beams
different wavelengths
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JP1999338846A
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English (en)
Japanese (ja)
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JP2001156018A (ja
JP4514861B2 (ja
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Priority to JP33884699A priority Critical patent/JP4514861B2/ja
Priority claimed from JP33884699A external-priority patent/JP4514861B2/ja
Priority to US09/722,745 priority patent/US6693257B1/en
Publication of JP2001156018A publication Critical patent/JP2001156018A/ja
Priority to US10/756,776 priority patent/US7336685B2/en
Publication of JP2001156018A5 publication Critical patent/JP2001156018A5/ja
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Publication of JP4514861B2 publication Critical patent/JP4514861B2/ja
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JP33884699A 1999-11-29 1999-11-29 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法 Expired - Fee Related JP4514861B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP33884699A JP4514861B2 (ja) 1999-11-29 1999-11-29 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法
US09/722,745 US6693257B1 (en) 1999-11-29 2000-11-28 Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US10/756,776 US7336685B2 (en) 1999-11-29 2004-01-14 Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33884699A JP4514861B2 (ja) 1999-11-29 1999-11-29 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001156018A JP2001156018A (ja) 2001-06-08
JP2001156018A5 true JP2001156018A5 (enExample) 2007-01-18
JP4514861B2 JP4514861B2 (ja) 2010-07-28

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JP33884699A Expired - Fee Related JP4514861B2 (ja) 1999-11-29 1999-11-29 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法

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US (2) US6693257B1 (enExample)
JP (1) JP4514861B2 (enExample)

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US9558973B2 (en) 2012-06-11 2017-01-31 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
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CN102856173B (zh) * 2012-09-29 2015-03-18 京东方科技集团股份有限公司 一种多晶硅薄膜及其制备方法、阵列基板、显示装置
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JP6193305B2 (ja) 2014-07-29 2017-09-06 ウルトラテック インク 高性能線形成光学システム及び方法
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CN106935491B (zh) * 2015-12-30 2021-10-12 上海微电子装备（集团）股份有限公司 一种激光退火装置及其退火方法
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