JP5087828B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5087828B2 JP5087828B2 JP2005246037A JP2005246037A JP5087828B2 JP 5087828 B2 JP5087828 B2 JP 5087828B2 JP 2005246037 A JP2005246037 A JP 2005246037A JP 2005246037 A JP2005246037 A JP 2005246037A JP 5087828 B2 JP5087828 B2 JP 5087828B2
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- 239000004065 semiconductor Substances 0.000 title claims description 116
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 230000007547 defect Effects 0.000 claims description 67
- 239000013078 crystal Substances 0.000 claims description 64
- 238000011084 recovery Methods 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 35
- 238000010894 electron beam technology Methods 0.000 claims description 20
- 230000001678 irradiating effect Effects 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000969 carrier Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 44
- 235000012431 wafers Nutrition 0.000 description 34
- 238000009826 distribution Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
2 第2半導体層(Pアノード層)
3 第1電極(アノード電極)
4 第3半導体層(N+カソード層)
5 第2電極(カソード電極)
Claims (9)
- 第1導電型の第1半導体層と、前記第1半導体層よりも高濃度で、かつ前記第1半導体層の一方の主面側で同第1半導体層に接する第2導電型の第2半導体層と、前記第2半導体層に電気的に接続する第1電極と、前記第1半導体層よりも高濃度で、かつ前記第1半導体層の他方の主面側で同第1半導体層に接する第1導電型の第3半導体層と、前記第3半導体層に電気的に接続する第2電極と、を備えた半導体装置を製造するにあたって、
第1導電型半導体基板の一方または他方の主面に荷電粒子を照射して前記半導体基板中に結晶欠陥を導入する工程と、
前記第1半導体層のキャリアのライフタイムを、前記荷電粒子を照射する前の値よりも低い値となるように熱処理する熱処理工程と、
結晶欠陥が導入された半導体基板の前記他方の主面を研削する工程と、
研削により露出した面から前記半導体基板中に第1導電型または第2導電型の不純物をイオン注入法により導入する工程と、
研削により露出した面にレーザ光を照射して、前記半導体基板中に導入された不純物を電気的に活性化させるとともに、前記半導体基板中に導入された結晶欠陥のうち、レーザ光の照射面から所定の深さまでの領域のキャリアのライフタイムが前記熱処理工程後のキャリアのライフタイムよりも高い値となるように結晶欠陥を回復させる回復工程と、
を含み、
レーザ光の照射により結晶欠陥を回復させる領域を、レーザ光の照射面から、研削後の全体の厚さの5%に相当する深さ以上30%に相当する深さ以下の範囲の任意の深さまでとすることを特徴とする半導体装置の製造方法。 - 前記回復工程において、前記レーザ光の照射面から所定の深さまでの領域のキャリアのライフタイムの値が、前記荷電粒子を照射する前の値まで回復することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記半導体基板の一方の主面に前記第2半導体層と前記第1電極を形成した後に、荷電粒子の照射によって半導体基板中に結晶欠陥を導入する工程を行うことを特徴とする請求項2に記載の半導体装置の製造方法。
- レーザ光の照射により結晶欠陥を回復させる領域を、レーザ光の照射面から、10μm以上40μm以下の範囲の任意の深さまでとすることを特徴とする請求項1〜3のいずれか一つに記載の半導体装置の製造方法。
- レーザ光の照射エリアごとに、複数のレーザ照射装置から所定の遅延時間だけ照射タイミングをずらして複数のパルスレーザを連続的に照射することを特徴とする請求項1〜4のいずれか一つに記載の半導体装置の製造方法。
- レーザ光の照射エリアごとに、レーザ光を照射する際のエネルギー密度を合計で1J/cm 2 以上4J/cm 2 以下とすることを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記レーザ光としてYAGレーザを用いることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置の製造方法。
- 前記荷電粒子として電子線を用いることを特徴とする請求項1〜7のいずれか一つに記載の半導体装置の製造方法。
- 前記半導体基板としてFZウェハーを用いることを特徴とする請求項1〜8のいずれか一つに記載の半導体装置の製造方法。
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JP2005246037A JP5087828B2 (ja) | 2005-08-26 | 2005-08-26 | 半導体装置の製造方法 |
US11/464,489 US7517777B2 (en) | 2005-08-26 | 2006-08-14 | Method of manufacturing semiconductor device and semiconductor device formed by the method |
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JP2012127604A Division JP5672269B2 (ja) | 2012-06-04 | 2012-06-04 | 半導体装置の製造方法 |
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JP2007059801A JP2007059801A (ja) | 2007-03-08 |
JP5087828B2 true JP5087828B2 (ja) | 2012-12-05 |
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JP5309360B2 (ja) | 2008-07-31 | 2013-10-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP5307093B2 (ja) * | 2010-08-23 | 2013-10-02 | 株式会社日本製鋼所 | 半導体デバイスの製造方法 |
DE112013002031T5 (de) * | 2012-08-22 | 2015-03-12 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Halbleitervorrichtungsherstellungsverfahren |
JP5610493B2 (ja) * | 2012-10-03 | 2014-10-22 | 株式会社日本製鋼所 | 半導体デバイスの製造方法および製造装置 |
CN103855198B (zh) * | 2012-11-29 | 2017-04-12 | 上海联星电子有限公司 | 一种逆导型igbt器件及其形成方法 |
CN103208532B (zh) * | 2013-02-28 | 2015-06-10 | 溧阳市宏达电机有限公司 | 一种鳍型pin二极管 |
JP6291981B2 (ja) * | 2013-04-08 | 2018-03-14 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6221436B2 (ja) | 2013-07-10 | 2017-11-01 | 富士電機株式会社 | 超接合mosfetとその製造方法およびダイオードを並列接続させた複合半導体装置 |
JP6075458B2 (ja) | 2013-09-18 | 2017-02-08 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE112015000206T5 (de) | 2014-10-03 | 2016-08-25 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
CN106463504B (zh) | 2014-11-17 | 2019-11-29 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
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US20070048982A1 (en) | 2007-03-01 |
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