JP2000268596A5 - - Google Patents

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Publication number
JP2000268596A5
JP2000268596A5 JP1999066893A JP6689399A JP2000268596A5 JP 2000268596 A5 JP2000268596 A5 JP 2000268596A5 JP 1999066893 A JP1999066893 A JP 1999066893A JP 6689399 A JP6689399 A JP 6689399A JP 2000268596 A5 JP2000268596 A5 JP 2000268596A5
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JP
Japan
Prior art keywords
program
address
circuit
memory cell
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999066893A
Other languages
English (en)
Japanese (ja)
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JP2000268596A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP6689399A priority Critical patent/JP2000268596A/ja
Priority claimed from JP6689399A external-priority patent/JP2000268596A/ja
Priority to US09/376,060 priority patent/US6205064B1/en
Publication of JP2000268596A publication Critical patent/JP2000268596A/ja
Priority to US09/765,427 priority patent/US6333878B2/en
Publication of JP2000268596A5 publication Critical patent/JP2000268596A5/ja
Pending legal-status Critical Current

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JP6689399A 1999-03-12 1999-03-12 半導体記憶装置 Pending JP2000268596A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6689399A JP2000268596A (ja) 1999-03-12 1999-03-12 半導体記憶装置
US09/376,060 US6205064B1 (en) 1999-03-12 1999-08-17 Semiconductor memory device having program circuit
US09/765,427 US6333878B2 (en) 1999-03-12 2001-01-22 Semiconductor memory device having program circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6689399A JP2000268596A (ja) 1999-03-12 1999-03-12 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2000268596A JP2000268596A (ja) 2000-09-29
JP2000268596A5 true JP2000268596A5 (enExample) 2006-02-23

Family

ID=13329063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6689399A Pending JP2000268596A (ja) 1999-03-12 1999-03-12 半導体記憶装置

Country Status (2)

Country Link
US (2) US6205064B1 (enExample)
JP (1) JP2000268596A (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4603111B2 (ja) * 1999-06-17 2010-12-22 富士通セミコンダクター株式会社 半導体記憶装置
KR100344819B1 (ko) * 1999-09-20 2002-07-19 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그 구동회로
KR100376265B1 (ko) * 1999-12-29 2003-03-17 주식회사 하이닉스반도체 모스 구조의 안티퓨즈를 이용한 메모리 리페어 회로
US6479310B1 (en) * 2000-01-03 2002-11-12 Motorola, Inc. Method for testing a semiconductor integrated circuit device
US8164362B2 (en) * 2000-02-02 2012-04-24 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6603712B2 (en) * 2000-02-02 2003-08-05 Broadcom Corporation High precision delay measurement circuit
DE10037794A1 (de) * 2000-08-03 2002-02-21 Infineon Technologies Ag Verfahren und Vorrichtung zum Testen einer integrierten Schaltung, zu testende integrierte Schaltung, und Wafer mit einer Vielzahl von zu testenden integrierten Schaltungen
KR100649970B1 (ko) * 2000-12-30 2006-11-27 주식회사 하이닉스반도체 리던던시 회로
DE10119142B4 (de) * 2001-04-19 2008-08-28 Qimonda Ag Halbleiterbaustein mit einer Vorrichtung zum Reparieren von fehlerhaften Adressen
JP4790158B2 (ja) 2001-06-11 2011-10-12 ルネサスエレクトロニクス株式会社 半導体装置
US6973605B1 (en) * 2001-06-15 2005-12-06 Artisan Components, Inc. System and method for assured built in self repair of memories
DE10154812B4 (de) * 2001-11-08 2010-04-15 Qimonda Ag Schaltung zum Einstellen einer Signallaufzeit eines Signals auf einer Signalleitung
DE10164032B4 (de) * 2001-12-28 2008-10-23 Qimonda Ag Verfahren zum Aktivieren von Sicherungseinheiten in elektronischen Schaltungseinrichtungen
KR100429237B1 (ko) * 2002-02-21 2004-04-29 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 리페어 방법 및 회로
KR100583107B1 (ko) * 2002-12-21 2006-05-23 주식회사 하이닉스반도체 리페어 회로
JP4254333B2 (ja) * 2003-05-01 2009-04-15 ソニー株式会社 半導体記憶装置およびそのセルフリペア方法
CN100375195C (zh) * 2003-10-24 2008-03-12 上海宏力半导体制造有限公司 光刻式只读存储器的感测放大器
JP4439950B2 (ja) * 2004-03-10 2010-03-24 富士通マイクロエレクトロニクス株式会社 半導体集積回路
DE102004040750B4 (de) * 2004-08-23 2008-03-27 Qimonda Ag Speicherzellenanordnung mit Speicherzellen vom CBRAM-Typ und Verfahren zum Programmieren derselben
KR100555578B1 (ko) * 2004-11-30 2006-03-03 삼성전자주식회사 디커플링 커패시터를 포함하는 반도체 메모리 소자
KR100702300B1 (ko) * 2005-05-30 2007-03-30 주식회사 하이닉스반도체 테스트 제어 회로를 갖는 반도체 메모리 장치
US7266737B2 (en) * 2005-07-13 2007-09-04 International Business Machines Corporation Method for enabling scan of defective ram prior to repair
JP4899666B2 (ja) * 2006-06-30 2012-03-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2008042054A (ja) * 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 電気ヒューズ装置
US7889587B2 (en) * 2006-12-06 2011-02-15 Intel Corporation Fuse programming schemes for robust yield
WO2008090670A1 (ja) * 2007-01-25 2008-07-31 Sharp Kabushiki Kaisha パルス出力回路、それを用いた表示装置の駆動回路、表示装置、およびパルス出力方法
US7895482B2 (en) * 2007-04-26 2011-02-22 Agere Systems Inc. Embedded memory repair
JP2009187641A (ja) 2008-02-08 2009-08-20 Elpida Memory Inc 半導体記憶装置及びその制御方法、並びに不良アドレスの救済可否判定方法
JP5513730B2 (ja) 2008-02-08 2014-06-04 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
KR101003150B1 (ko) * 2009-05-14 2010-12-21 주식회사 하이닉스반도체 어드레스 시프트 회로 및 방법
CN102272918B (zh) * 2009-11-09 2014-09-03 松下电器产业株式会社 半导体存储装置
US8194489B2 (en) * 2010-01-21 2012-06-05 International Business Machines Corporation Paired programmable fuses
JP2011233631A (ja) * 2010-04-26 2011-11-17 Elpida Memory Inc 半導体装置
US8719648B2 (en) 2011-07-27 2014-05-06 International Business Machines Corporation Interleaving of memory repair data compression and fuse programming operations in single fusebay architecture
US8467260B2 (en) 2011-08-05 2013-06-18 International Business Machines Corporation Structure and method for storing multiple repair pass data into a fusebay
US8484543B2 (en) 2011-08-08 2013-07-09 International Business Machines Corporation Fusebay controller structure, system, and method
US8537627B2 (en) 2011-09-01 2013-09-17 International Business Machines Corporation Determining fusebay storage element usage
KR20150006167A (ko) * 2013-07-08 2015-01-16 에스케이하이닉스 주식회사 반도체 시스템 및 그 리페어 방법
KR102152690B1 (ko) * 2014-06-26 2020-09-07 에스케이하이닉스 주식회사 래치 회로 및 이를 포함하는 반도체 장치
US9691446B2 (en) 2015-09-11 2017-06-27 Kabushiki Kaisha Toshiba Memory device
EP4012709B1 (en) * 2020-09-14 2024-01-03 Changxin Memory Technologies, Inc. Semiconductor memory

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JP3553138B2 (ja) * 1994-07-14 2004-08-11 株式会社ルネサステクノロジ 半導体記憶装置
JP2629645B2 (ja) * 1995-04-20 1997-07-09 日本電気株式会社 半導体記憶装置
KR970001564U (ko) * 1995-06-21 1997-01-21 자동차용 후부차체의 보강구조
US5574689A (en) * 1995-07-11 1996-11-12 Micron Technology, Inc. Address comparing for non-precharged redundancy address matching
US5631862A (en) 1996-03-05 1997-05-20 Micron Technology, Inc. Self current limiting antifuse circuit
JP2882369B2 (ja) * 1996-06-27 1999-04-12 日本電気株式会社 半導体記憶装置
JP2000235800A (ja) * 1999-02-12 2000-08-29 Mitsubishi Electric Corp 半導体記憶装置

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