JP2000236040A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2000236040A
JP2000236040A JP11036142A JP3614299A JP2000236040A JP 2000236040 A JP2000236040 A JP 2000236040A JP 11036142 A JP11036142 A JP 11036142A JP 3614299 A JP3614299 A JP 3614299A JP 2000236040 A JP2000236040 A JP 2000236040A
Authority
JP
Japan
Prior art keywords
semiconductor device
wiring
wire connection
wirings
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11036142A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000236040A5 (enExample
Inventor
Tsuguhiko Hirano
次彦 平野
Hidemi Ozawa
英美 小澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Semiconductor Package and Test Solutions Co Ltd
Original Assignee
Hitachi Hokkai Semiconductor Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Hokkai Semiconductor Ltd, Hitachi Ltd filed Critical Hitachi Hokkai Semiconductor Ltd
Priority to JP11036142A priority Critical patent/JP2000236040A/ja
Priority to US09/495,918 priority patent/US6472749B1/en
Publication of JP2000236040A publication Critical patent/JP2000236040A/ja
Priority to US10/162,613 priority patent/US6838767B2/en
Publication of JP2000236040A5 publication Critical patent/JP2000236040A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W70/65—
    • H10W74/114—
    • H10W70/656—
    • H10W70/685—
    • H10W72/073—
    • H10W72/075—
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/352—
    • H10W72/354—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5366—
    • H10W72/5445—
    • H10W72/5449—
    • H10W72/5522—
    • H10W72/884—
    • H10W72/932—
    • H10W74/00—
    • H10W90/734—
    • H10W90/754—

Landscapes

  • Wire Bonding (AREA)
JP11036142A 1999-02-15 1999-02-15 半導体装置 Pending JP2000236040A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11036142A JP2000236040A (ja) 1999-02-15 1999-02-15 半導体装置
US09/495,918 US6472749B1 (en) 1999-02-15 2000-02-02 Semiconductor device having a shortened wiring length to reduce the size of a chip
US10/162,613 US6838767B2 (en) 1999-02-15 2002-06-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11036142A JP2000236040A (ja) 1999-02-15 1999-02-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2000236040A true JP2000236040A (ja) 2000-08-29
JP2000236040A5 JP2000236040A5 (enExample) 2005-06-16

Family

ID=12461554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11036142A Pending JP2000236040A (ja) 1999-02-15 1999-02-15 半導体装置

Country Status (2)

Country Link
US (2) US6472749B1 (enExample)
JP (1) JP2000236040A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068922A (ja) * 2001-08-23 2003-03-07 Texas Instr Japan Ltd 半導体チップ搭載基板及びそれを用いた半導体装置
JP2004031562A (ja) * 2002-06-25 2004-01-29 Renesas Technology Corp 半導体装置およびその製造方法
JP2007201025A (ja) * 2006-01-24 2007-08-09 Denso Corp ボールグリッドアレイ
WO2009081685A1 (ja) * 2007-12-26 2009-07-02 Murata Manufacturing Co., Ltd. 部品実装基板およびその製造方法
JP2012084840A (ja) * 2010-09-13 2012-04-26 Renesas Electronics Corp 半導体装置及びその製造方法
JP2021044458A (ja) * 2019-09-12 2021-03-18 キヤノン株式会社 配線基板及び半導体装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW575949B (en) * 2001-02-06 2004-02-11 Hitachi Ltd Mixed integrated circuit device, its manufacturing method and electronic apparatus
WO2003023851A1 (en) * 2001-09-07 2003-03-20 Ricoh Company, Ltd. Semiconductor device and voltage regulator
US20030218246A1 (en) * 2002-05-22 2003-11-27 Hirofumi Abe Semiconductor device passing large electric current
JP4056360B2 (ja) * 2002-11-08 2008-03-05 沖電気工業株式会社 半導体装置及びその製造方法
CN100468666C (zh) * 2003-08-08 2009-03-11 陶氏康宁公司 利用液体注塑制造电子元件的方法及由其制造的电子器件
JP2005268575A (ja) * 2004-03-19 2005-09-29 Hitachi Ltd 半導体装置
JP4137929B2 (ja) * 2005-09-30 2008-08-20 シャープ株式会社 半導体装置
JP2009105139A (ja) * 2007-10-22 2009-05-14 Shinko Electric Ind Co Ltd 配線基板及びその製造方法と半導体装置
JP4973463B2 (ja) * 2007-11-16 2012-07-11 トヨタ自動車株式会社 半導体装置
JP2009295958A (ja) * 2008-05-09 2009-12-17 Panasonic Corp 半導体装置
JP4991637B2 (ja) * 2008-06-12 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI406373B (zh) * 2009-01-14 2013-08-21 日月光半導體製造股份有限公司 可選擇線路之基板及覆晶接合結構
TW201041105A (en) * 2009-05-13 2010-11-16 Advanced Semiconductor Eng Substrate having single patterned metal layer, and package applied with the same, and methods of manufacturing the substrate and package
US8367473B2 (en) * 2009-05-13 2013-02-05 Advanced Semiconductor Engineering, Inc. Substrate having single patterned metal layer exposing patterned dielectric layer, chip package structure including the substrate, and manufacturing methods thereof
US20100289132A1 (en) * 2009-05-13 2010-11-18 Shih-Fu Huang Substrate having embedded single patterned metal layer, and package applied with the same, and methods of manufacturing of the substrate and package
TWI425603B (zh) * 2009-09-08 2014-02-01 日月光半導體製造股份有限公司 晶片封裝體
US20110084372A1 (en) 2009-10-14 2011-04-14 Advanced Semiconductor Engineering, Inc. Package carrier, semiconductor package, and process for fabricating same
US8786062B2 (en) * 2009-10-14 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package and process for fabricating same
US8569894B2 (en) 2010-01-13 2013-10-29 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
TWI411075B (zh) 2010-03-22 2013-10-01 日月光半導體製造股份有限公司 半導體封裝件及其製造方法
KR101959923B1 (ko) * 2012-07-30 2019-03-20 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102007404B1 (ko) 2012-12-14 2019-08-05 엘지이노텍 주식회사 발광소자 패키지
US10861773B2 (en) * 2017-08-30 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213261A (ja) * 1986-03-14 1987-09-19 Canon Inc 長尺素子アレイ部材
JP3176542B2 (ja) * 1995-10-25 2001-06-18 シャープ株式会社 半導体装置及びその製造方法
JP3679199B2 (ja) * 1996-07-30 2005-08-03 日本テキサス・インスツルメンツ株式会社 半導体パッケージ装置
US6064111A (en) * 1996-07-31 2000-05-16 Hitachi Company, Ltd. Substrate for holding a chip of semi-conductor package, semi-conductor package, and fabrication process of semi-conductor package
JPH1154658A (ja) * 1997-07-30 1999-02-26 Hitachi Ltd 半導体装置及びその製造方法並びにフレーム構造体
JPH11186294A (ja) * 1997-10-14 1999-07-09 Sumitomo Metal Smi Electron Devices Inc 半導体パッケージ及びその製造方法
JPH11204549A (ja) * 1998-01-13 1999-07-30 Citizen Watch Co Ltd 半導体装置の製造方法
JPH11284006A (ja) * 1998-03-31 1999-10-15 Fujitsu Ltd 半導体装置
US5903051A (en) * 1998-04-03 1999-05-11 Motorola, Inc. Electronic component and method of manufacture
JP3506211B2 (ja) * 1998-05-28 2004-03-15 シャープ株式会社 絶縁性配線基板及び樹脂封止型半導体装置
JP3310617B2 (ja) * 1998-05-29 2002-08-05 シャープ株式会社 樹脂封止型半導体装置及びその製造方法
JP3844032B2 (ja) * 1998-07-14 2006-11-08 日本テキサス・インスツルメンツ株式会社 半導体装置及びその製造方法
US6242815B1 (en) * 1999-12-07 2001-06-05 Advanced Semiconductor Engineering, Inc. Flexible substrate based ball grid array (BGA) package

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068922A (ja) * 2001-08-23 2003-03-07 Texas Instr Japan Ltd 半導体チップ搭載基板及びそれを用いた半導体装置
JP2004031562A (ja) * 2002-06-25 2004-01-29 Renesas Technology Corp 半導体装置およびその製造方法
JP2007201025A (ja) * 2006-01-24 2007-08-09 Denso Corp ボールグリッドアレイ
WO2009081685A1 (ja) * 2007-12-26 2009-07-02 Murata Manufacturing Co., Ltd. 部品実装基板およびその製造方法
JP2012084840A (ja) * 2010-09-13 2012-04-26 Renesas Electronics Corp 半導体装置及びその製造方法
US8692383B2 (en) 2010-09-13 2014-04-08 Renesas Electronics Coporation Semiconductor device and method of manufacturing the same
US9087816B2 (en) 2010-09-13 2015-07-21 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP2021044458A (ja) * 2019-09-12 2021-03-18 キヤノン株式会社 配線基板及び半導体装置
JP7362380B2 (ja) 2019-09-12 2023-10-17 キヤノン株式会社 配線基板及び半導体装置

Also Published As

Publication number Publication date
US6472749B1 (en) 2002-10-29
US20020153618A1 (en) 2002-10-24
US6838767B2 (en) 2005-01-04

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