JP2000208778A5 - - Google Patents
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- Publication number
- JP2000208778A5 JP2000208778A5 JP1999320346A JP32034699A JP2000208778A5 JP 2000208778 A5 JP2000208778 A5 JP 2000208778A5 JP 1999320346 A JP1999320346 A JP 1999320346A JP 32034699 A JP32034699 A JP 32034699A JP 2000208778 A5 JP2000208778 A5 JP 2000208778A5
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- JP
- Japan
- Prior art keywords
- active layer
- impurity region
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- gate wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000012535 impurity Substances 0.000 description 49
- 239000004065 semiconductor Substances 0.000 description 19
- 230000003197 catalytic effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32034699A JP4641581B2 (ja) | 1998-11-10 | 1999-11-10 | 半導体装置およびその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33656298 | 1998-11-10 | ||
| JP10-336562 | 1998-11-10 | ||
| JP10-319671 | 1998-11-10 | ||
| JP31967198 | 1998-11-10 | ||
| JP32034699A JP4641581B2 (ja) | 1998-11-10 | 1999-11-10 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000208778A JP2000208778A (ja) | 2000-07-28 |
| JP2000208778A5 true JP2000208778A5 (enExample) | 2006-12-14 |
| JP4641581B2 JP4641581B2 (ja) | 2011-03-02 |
Family
ID=27339742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32034699A Expired - Fee Related JP4641581B2 (ja) | 1998-11-10 | 1999-11-10 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4641581B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4536187B2 (ja) * | 1998-11-17 | 2010-09-01 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP4977927B2 (ja) * | 2000-10-23 | 2012-07-18 | 日本電気株式会社 | 薄膜トランジスタ及びそれを用いた液晶表示装置 |
| US6830965B1 (en) * | 2000-10-25 | 2004-12-14 | Sharp Laboratories Of America, Inc. | Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization |
| JP5046452B2 (ja) | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100740930B1 (ko) * | 2000-10-26 | 2007-07-19 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
| JP4954366B2 (ja) | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2003068757A (ja) * | 2001-08-30 | 2003-03-07 | Sony Corp | アクティブマトリクス基板及びその製造方法 |
| US7541614B2 (en) * | 2003-03-11 | 2009-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same |
| JP4646531B2 (ja) * | 2004-03-05 | 2011-03-09 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及びその作製方法、並びに前記薄膜トランジスタを用いた電子機器 |
| WO2011145468A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| TW202431651A (zh) | 2013-10-10 | 2024-08-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| JP2018170510A (ja) * | 2018-06-04 | 2018-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP3882222A4 (en) | 2018-11-14 | 2022-08-10 | Agc Inc. | Glass substrate for high frequency device, liquid crystal antenna and high frequency device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08167722A (ja) * | 1994-12-14 | 1996-06-25 | Semiconductor Energy Lab Co Ltd | 半導体集積回路の作製方法 |
| JP3897836B2 (ja) * | 1995-12-20 | 2007-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4540776B2 (ja) * | 1998-11-02 | 2010-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
-
1999
- 1999-11-10 JP JP32034699A patent/JP4641581B2/ja not_active Expired - Fee Related
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