JP4641581B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4641581B2
JP4641581B2 JP32034699A JP32034699A JP4641581B2 JP 4641581 B2 JP4641581 B2 JP 4641581B2 JP 32034699 A JP32034699 A JP 32034699A JP 32034699 A JP32034699 A JP 32034699A JP 4641581 B2 JP4641581 B2 JP 4641581B2
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Japan
Prior art keywords
active layer
impurity region
concentration
film
group
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Expired - Fee Related
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JP32034699A
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English (en)
Japanese (ja)
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JP2000208778A (ja
JP2000208778A5 (enExample
Inventor
舜平 山崎
久 大谷
敏次 浜谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP32034699A priority Critical patent/JP4641581B2/ja
Publication of JP2000208778A publication Critical patent/JP2000208778A/ja
Publication of JP2000208778A5 publication Critical patent/JP2000208778A5/ja
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JP32034699A 1998-11-10 1999-11-10 半導体装置およびその作製方法 Expired - Fee Related JP4641581B2 (ja)

Priority Applications (1)

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JP32034699A JP4641581B2 (ja) 1998-11-10 1999-11-10 半導体装置およびその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP33656298 1998-11-10
JP10-336562 1998-11-10
JP10-319671 1998-11-10
JP31967198 1998-11-10
JP32034699A JP4641581B2 (ja) 1998-11-10 1999-11-10 半導体装置およびその作製方法

Publications (3)

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JP2000208778A JP2000208778A (ja) 2000-07-28
JP2000208778A5 JP2000208778A5 (enExample) 2006-12-14
JP4641581B2 true JP4641581B2 (ja) 2011-03-02

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JP32034699A Expired - Fee Related JP4641581B2 (ja) 1998-11-10 1999-11-10 半導体装置およびその作製方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4536187B2 (ja) * 1998-11-17 2010-09-01 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4977927B2 (ja) * 2000-10-23 2012-07-18 日本電気株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置
US6830965B1 (en) * 2000-10-25 2004-12-14 Sharp Laboratories Of America, Inc. Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization
JP5046452B2 (ja) 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100740930B1 (ko) * 2000-10-26 2007-07-19 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
JP4954366B2 (ja) 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003068757A (ja) * 2001-08-30 2003-03-07 Sony Corp アクティブマトリクス基板及びその製造方法
US7541614B2 (en) * 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
JP4646531B2 (ja) * 2004-03-05 2011-03-09 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその作製方法、並びに前記薄膜トランジスタを用いた電子機器
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TW202431651A (zh) 2013-10-10 2024-08-01 日商半導體能源研究所股份有限公司 液晶顯示裝置
JP2018170510A (ja) * 2018-06-04 2018-11-01 株式会社半導体エネルギー研究所 半導体装置
EP3882222A4 (en) 2018-11-14 2022-08-10 Agc Inc. Glass substrate for high frequency device, liquid crystal antenna and high frequency device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08167722A (ja) * 1994-12-14 1996-06-25 Semiconductor Energy Lab Co Ltd 半導体集積回路の作製方法
JP3897836B2 (ja) * 1995-12-20 2007-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4540776B2 (ja) * 1998-11-02 2010-09-08 株式会社半導体エネルギー研究所 半導体装置および電子機器

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