JP2000196038A5 - - Google Patents

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Publication number
JP2000196038A5
JP2000196038A5 JP1998372195A JP37219598A JP2000196038A5 JP 2000196038 A5 JP2000196038 A5 JP 2000196038A5 JP 1998372195 A JP1998372195 A JP 1998372195A JP 37219598 A JP37219598 A JP 37219598A JP 2000196038 A5 JP2000196038 A5 JP 2000196038A5
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JP
Japan
Prior art keywords
conductive layer
region
semiconductor device
film
insulating film
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JP1998372195A
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English (en)
Japanese (ja)
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JP4180716B2 (ja
JP2000196038A (ja
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Priority to JP37219598A priority Critical patent/JP4180716B2/ja
Priority claimed from JP37219598A external-priority patent/JP4180716B2/ja
Publication of JP2000196038A publication Critical patent/JP2000196038A/ja
Publication of JP2000196038A5 publication Critical patent/JP2000196038A5/ja
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Publication of JP4180716B2 publication Critical patent/JP4180716B2/ja
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Expired - Fee Related legal-status Critical Current

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JP37219598A 1998-12-28 1998-12-28 半導体装置の製造方法 Expired - Fee Related JP4180716B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP37219598A JP4180716B2 (ja) 1998-12-28 1998-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37219598A JP4180716B2 (ja) 1998-12-28 1998-12-28 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000196038A JP2000196038A (ja) 2000-07-14
JP2000196038A5 true JP2000196038A5 (de) 2005-10-27
JP4180716B2 JP4180716B2 (ja) 2008-11-12

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JP37219598A Expired - Fee Related JP4180716B2 (ja) 1998-12-28 1998-12-28 半導体装置の製造方法

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JP (1) JP4180716B2 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7655968B2 (en) 2003-09-04 2010-02-02 Micron Technology, Inc. Semiconductor devices
US7759193B2 (en) 2008-07-09 2010-07-20 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7785962B2 (en) 2007-02-26 2010-08-31 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7915136B2 (en) 2004-07-19 2011-03-29 Round Rock Research, Llc Methods of forming integrated circuit devices

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020058259A (ko) * 2000-12-29 2002-07-12 박종섭 반도체 소자의 제조 방법
KR100459707B1 (ko) * 2002-03-21 2004-12-04 삼성전자주식회사 실린더형 커패시터를 포함하는 반도체 소자 및 그 제조 방법
KR100475272B1 (ko) * 2002-06-29 2005-03-10 주식회사 하이닉스반도체 반도체소자 제조방법
JP2004111414A (ja) 2002-09-13 2004-04-08 Renesas Technology Corp 半導体装置の製造方法
KR100538098B1 (ko) * 2003-08-18 2005-12-21 삼성전자주식회사 개선된 구조적 안정성 및 향상된 캐패시턴스를 갖는캐패시터를 포함하는 반도체 장치 및 그 제조 방법
US7125781B2 (en) * 2003-09-04 2006-10-24 Micron Technology, Inc. Methods of forming capacitor devices
KR100645459B1 (ko) 2004-06-23 2006-11-15 주식회사 하이닉스반도체 반도체 장치 제조 방법
US7320911B2 (en) 2004-12-06 2008-01-22 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7557015B2 (en) 2005-03-18 2009-07-07 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7544563B2 (en) 2005-05-18 2009-06-09 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7902081B2 (en) 2006-10-11 2011-03-08 Micron Technology, Inc. Methods of etching polysilicon and methods of forming pluralities of capacitors
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US7682924B2 (en) 2007-08-13 2010-03-23 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8388851B2 (en) 2008-01-08 2013-03-05 Micron Technology, Inc. Capacitor forming methods
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
JP2009253208A (ja) 2008-04-10 2009-10-29 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP4979742B2 (ja) * 2009-06-26 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置
JP5206622B2 (ja) 2009-08-07 2013-06-12 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
DE112010003895T5 (de) 2009-10-02 2012-08-02 Mitsubishi Gas Chemical Co., Inc. Verarbeitungsflüssigkeit zur Unterdrückung eines Musterzusammenbruchs einer feinen Metallstruktur und Verfahren zur Herstellung einer feinen Metallstruktur, bei dem diese eingesetzt wird
DE112010004602B4 (de) 2009-10-22 2020-01-30 Mitsubishi Gas Chemical Co., Inc. Verfahren zur Herstellung einer feinen Struktur unter Einsatz einer Verarbeitungsflüssigkeit zur Verhinderung eines Musterzusammenbruchs
KR20120116390A (ko) 2009-10-23 2012-10-22 미츠비시 가스 가가쿠 가부시키가이샤 금속 미세 구조체의 패턴 도괴 억제용 처리액 및 이것을 이용한 금속 미세 구조체의 제조 방법
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
WO2012032856A1 (ja) 2010-09-08 2012-03-15 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
WO2012032855A1 (ja) 2010-09-08 2012-03-15 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
WO2012032854A1 (ja) 2010-09-08 2012-03-15 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
US8946043B2 (en) 2011-12-21 2015-02-03 Micron Technology, Inc. Methods of forming capacitors
TWI473275B (zh) * 2012-01-04 2015-02-11 Inotera Memories Inc 具有強健型環溝結構的記憶體電容之製造方法
JP6119285B2 (ja) 2012-03-27 2017-04-26 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
US8652926B1 (en) 2012-07-26 2014-02-18 Micron Technology, Inc. Methods of forming capacitors
EP3985724B1 (de) 2020-08-21 2023-06-07 Changxin Memory Technologies, Inc. Halbleitervorrichtung und verfahren zur herstellung davon
CN114078855A (zh) * 2020-08-21 2022-02-22 长鑫存储技术有限公司 半导体器件及其形成方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7655968B2 (en) 2003-09-04 2010-02-02 Micron Technology, Inc. Semiconductor devices
US7915136B2 (en) 2004-07-19 2011-03-29 Round Rock Research, Llc Methods of forming integrated circuit devices
US7785962B2 (en) 2007-02-26 2010-08-31 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8129240B2 (en) 2007-02-26 2012-03-06 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8263457B2 (en) 2007-02-26 2012-09-11 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7759193B2 (en) 2008-07-09 2010-07-20 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8163613B2 (en) 2008-07-09 2012-04-24 Micron Technology, Inc. Methods of forming a plurality of capacitors

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