JP2000183329A5 - - Google Patents
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- Publication number
- JP2000183329A5 JP2000183329A5 JP1999219318A JP21931899A JP2000183329A5 JP 2000183329 A5 JP2000183329 A5 JP 2000183329A5 JP 1999219318 A JP1999219318 A JP 1999219318A JP 21931899 A JP21931899 A JP 21931899A JP 2000183329 A5 JP2000183329 A5 JP 2000183329A5
- Authority
- JP
- Japan
- Prior art keywords
- impurities
- conductive layer
- semiconductor device
- introducing
- refractory metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 description 49
- 239000004065 semiconductor Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 22
- 239000003870 refractory metal Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21931899A JP4581159B2 (ja) | 1998-10-08 | 1999-08-02 | 半導体装置およびその製造方法 |
| US09/413,193 US6417565B1 (en) | 1998-10-08 | 1999-10-05 | Semiconductor device and method for producing same |
| KR1019990043162A KR100730602B1 (ko) | 1998-10-08 | 1999-10-07 | 반도체 장치 및 그 제조 방법 |
| US10/150,974 US20030011035A1 (en) | 1998-10-08 | 2002-05-21 | Semiconductor device and method for producing same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-287077 | 1998-10-08 | ||
| JP28707798 | 1998-10-08 | ||
| JP21931899A JP4581159B2 (ja) | 1998-10-08 | 1999-08-02 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000183329A JP2000183329A (ja) | 2000-06-30 |
| JP2000183329A5 true JP2000183329A5 (enExample) | 2006-04-27 |
| JP4581159B2 JP4581159B2 (ja) | 2010-11-17 |
Family
ID=26523049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21931899A Expired - Fee Related JP4581159B2 (ja) | 1998-10-08 | 1999-08-02 | 半導体装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6417565B1 (enExample) |
| JP (1) | JP4581159B2 (enExample) |
| KR (1) | KR100730602B1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143617A (en) * | 1998-02-23 | 2000-11-07 | Taiwan Semiconductor Manufacturing Company | Composite capacitor electrode for a DRAM cell |
| JP2001244469A (ja) * | 2000-03-02 | 2001-09-07 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| KR100331861B1 (en) * | 2000-07-21 | 2002-04-09 | Hynix Semiconductor Inc | Method for fabricating gate electrode of semiconductor device |
| KR100447031B1 (ko) * | 2001-03-23 | 2004-09-07 | 삼성전자주식회사 | 텅스텐 실리사이드막의 형성방법 |
| JP3768871B2 (ja) * | 2001-12-18 | 2006-04-19 | 株式会社東芝 | 半導体装置の製造方法 |
| US6762469B2 (en) | 2002-04-19 | 2004-07-13 | International Business Machines Corporation | High performance CMOS device structure with mid-gap metal gate |
| US20040176751A1 (en) * | 2002-08-14 | 2004-09-09 | Endovia Medical, Inc. | Robotic medical instrument system |
| JP2004134705A (ja) * | 2002-10-15 | 2004-04-30 | Jiaotong Univ | 金属酸化膜半導体電界効果トランジスタおよびそのゲート構造 |
| US7323411B1 (en) * | 2003-09-26 | 2008-01-29 | Cypress Semiconductor Corporation | Method of selective tungsten deposition on a silicon surface |
| US20050121733A1 (en) * | 2003-12-09 | 2005-06-09 | Taiwan Semiconductor Manufacturing Co. | Method of forming a semiconductor device with a high dielectric constant material and an offset spacer |
| KR100550345B1 (ko) * | 2004-10-11 | 2006-02-08 | 삼성전자주식회사 | 반도체 장치의 실리사이드막 형성방법 |
| JP4455427B2 (ja) * | 2005-06-29 | 2010-04-21 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP4320405B2 (ja) * | 2007-03-27 | 2009-08-26 | Ｏｋｉセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
| KR101877377B1 (ko) | 2010-04-23 | 2018-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| WO2011132591A1 (en) * | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101540039B1 (ko) | 2010-04-23 | 2015-07-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| DE112011101395B4 (de) | 2010-04-23 | 2014-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zum Herstellen einer Halbleitervorrichtung |
| US12015066B2 (en) | 2020-06-17 | 2024-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Triple layer high-k gate dielectric stack for workfunction engineering |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59108358A (ja) * | 1982-12-13 | 1984-06-22 | Fujitsu Ltd | 半導体装置 |
| JPS6465872A (en) * | 1987-09-05 | 1989-03-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0198230A (ja) * | 1987-10-09 | 1989-04-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0196958A (ja) * | 1987-10-09 | 1989-04-14 | Fujitsu Ltd | 半導体装置の製造方法 |
| AU638812B2 (en) * | 1990-04-16 | 1993-07-08 | Digital Equipment Corporation | A method of operating a semiconductor device |
| JP3285934B2 (ja) * | 1991-07-16 | 2002-05-27 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH07263680A (ja) * | 1994-03-24 | 1995-10-13 | Hitachi Ltd | 半導体装置の製造方法 |
| US5952701A (en) * | 1997-08-18 | 1999-09-14 | National Semiconductor Corporation | Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor value |
-
1999
- 1999-08-02 JP JP21931899A patent/JP4581159B2/ja not_active Expired - Fee Related
- 1999-10-05 US US09/413,193 patent/US6417565B1/en not_active Expired - Lifetime
- 1999-10-07 KR KR1019990043162A patent/KR100730602B1/ko not_active Expired - Fee Related
-
2002
- 2002-05-21 US US10/150,974 patent/US20030011035A1/en not_active Abandoned
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