JP2002324898A5 - - Google Patents
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- Publication number
- JP2002324898A5 JP2002324898A5 JP2001125746A JP2001125746A JP2002324898A5 JP 2002324898 A5 JP2002324898 A5 JP 2002324898A5 JP 2001125746 A JP2001125746 A JP 2001125746A JP 2001125746 A JP2001125746 A JP 2001125746A JP 2002324898 A5 JP2002324898 A5 JP 2002324898A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- semiconductor device
- layer
- semiconductor layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 57
- 239000000758 substrate Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 12
- 239000012212 insulator Substances 0.000 claims 9
- 150000002500 ions Chemical class 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 238000002513 implantation Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001125746A JP3768829B2 (ja) | 2001-04-24 | 2001-04-24 | 光電変換半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001125746A JP3768829B2 (ja) | 2001-04-24 | 2001-04-24 | 光電変換半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002324898A JP2002324898A (ja) | 2002-11-08 |
| JP2002324898A5 true JP2002324898A5 (enExample) | 2005-09-22 |
| JP3768829B2 JP3768829B2 (ja) | 2006-04-19 |
Family
ID=18974909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001125746A Expired - Fee Related JP3768829B2 (ja) | 2001-04-24 | 2001-04-24 | 光電変換半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3768829B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100861317B1 (ko) | 2007-01-15 | 2008-10-01 | 이진민 | 방사성동위원소 전지 및 그 제조방법 |
| AU2010224003B2 (en) * | 2009-03-12 | 2013-02-14 | The Curators Of The University Of Missouri | High energy-density radioisotope micro power sources |
| JP2011171764A (ja) * | 2011-05-13 | 2011-09-01 | Renesas Electronics Corp | 固体撮像装置 |
-
2001
- 2001-04-24 JP JP2001125746A patent/JP3768829B2/ja not_active Expired - Fee Related
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