JP3768829B2 - 光電変換半導体装置およびその製造方法 - Google Patents

光電変換半導体装置およびその製造方法 Download PDF

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Publication number
JP3768829B2
JP3768829B2 JP2001125746A JP2001125746A JP3768829B2 JP 3768829 B2 JP3768829 B2 JP 3768829B2 JP 2001125746 A JP2001125746 A JP 2001125746A JP 2001125746 A JP2001125746 A JP 2001125746A JP 3768829 B2 JP3768829 B2 JP 3768829B2
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Japan
Prior art keywords
photoelectric conversion
semiconductor layer
transistor
layer
semiconductor device
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Expired - Fee Related
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JP2001125746A
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Japanese (ja)
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JP2002324898A5 (enExample
JP2002324898A (ja
Inventor
豊幸 嶋崎
雄三 志水
勝市 大澤
哲夫 茶藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2001125746A priority Critical patent/JP3768829B2/ja
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Publication of JP2002324898A5 publication Critical patent/JP2002324898A5/ja
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  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001125746A 2001-04-24 2001-04-24 光電変換半導体装置およびその製造方法 Expired - Fee Related JP3768829B2 (ja)

Priority Applications (1)

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JP2001125746A JP3768829B2 (ja) 2001-04-24 2001-04-24 光電変換半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001125746A JP3768829B2 (ja) 2001-04-24 2001-04-24 光電変換半導体装置およびその製造方法

Publications (3)

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JP2002324898A JP2002324898A (ja) 2002-11-08
JP2002324898A5 JP2002324898A5 (enExample) 2005-09-22
JP3768829B2 true JP3768829B2 (ja) 2006-04-19

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JP2001125746A Expired - Fee Related JP3768829B2 (ja) 2001-04-24 2001-04-24 光電変換半導体装置およびその製造方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100861317B1 (ko) 2007-01-15 2008-10-01 이진민 방사성동위원소 전지 및 그 제조방법
AU2010224003B2 (en) * 2009-03-12 2013-02-14 The Curators Of The University Of Missouri High energy-density radioisotope micro power sources
JP2011171764A (ja) * 2011-05-13 2011-09-01 Renesas Electronics Corp 固体撮像装置

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JP2002324898A (ja) 2002-11-08

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