KR100730602B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100730602B1
KR100730602B1 KR1019990043162A KR19990043162A KR100730602B1 KR 100730602 B1 KR100730602 B1 KR 100730602B1 KR 1019990043162 A KR1019990043162 A KR 1019990043162A KR 19990043162 A KR19990043162 A KR 19990043162A KR 100730602 B1 KR100730602 B1 KR 100730602B1
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KR
South Korea
Prior art keywords
conductive layer
impurity
introducing
melting point
high melting
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KR1019990043162A
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English (en)
Korean (ko)
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KR20000028884A (ko
Inventor
고마쓰히로시
Original Assignee
소니 가부시끼 가이샤
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Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR20000028884A publication Critical patent/KR20000028884A/ko
Application granted granted Critical
Publication of KR100730602B1 publication Critical patent/KR100730602B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019990043162A 1998-10-08 1999-10-07 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100730602B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP28707798 1998-10-08
JP98-287077 1998-10-08
JP99-219318 1999-08-02
JP21931899A JP4581159B2 (ja) 1998-10-08 1999-08-02 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20000028884A KR20000028884A (ko) 2000-05-25
KR100730602B1 true KR100730602B1 (ko) 2007-06-20

Family

ID=26523049

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990043162A Expired - Fee Related KR100730602B1 (ko) 1998-10-08 1999-10-07 반도체 장치 및 그 제조 방법

Country Status (3)

Country Link
US (2) US6417565B1 (enExample)
JP (1) JP4581159B2 (enExample)
KR (1) KR100730602B1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143617A (en) * 1998-02-23 2000-11-07 Taiwan Semiconductor Manufacturing Company Composite capacitor electrode for a DRAM cell
JP2001244469A (ja) * 2000-03-02 2001-09-07 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
KR100331861B1 (en) * 2000-07-21 2002-04-09 Hynix Semiconductor Inc Method for fabricating gate electrode of semiconductor device
KR100447031B1 (ko) * 2001-03-23 2004-09-07 삼성전자주식회사 텅스텐 실리사이드막의 형성방법
JP3768871B2 (ja) * 2001-12-18 2006-04-19 株式会社東芝 半導体装置の製造方法
US6762469B2 (en) 2002-04-19 2004-07-13 International Business Machines Corporation High performance CMOS device structure with mid-gap metal gate
US20040176751A1 (en) * 2002-08-14 2004-09-09 Endovia Medical, Inc. Robotic medical instrument system
JP2004134705A (ja) * 2002-10-15 2004-04-30 Jiaotong Univ 金属酸化膜半導体電界効果トランジスタおよびそのゲート構造
US7323411B1 (en) * 2003-09-26 2008-01-29 Cypress Semiconductor Corporation Method of selective tungsten deposition on a silicon surface
US20050121733A1 (en) * 2003-12-09 2005-06-09 Taiwan Semiconductor Manufacturing Co. Method of forming a semiconductor device with a high dielectric constant material and an offset spacer
KR100550345B1 (ko) * 2004-10-11 2006-02-08 삼성전자주식회사 반도체 장치의 실리사이드막 형성방법
JP4455427B2 (ja) * 2005-06-29 2010-04-21 株式会社東芝 半導体装置及びその製造方法
JP4320405B2 (ja) * 2007-03-27 2009-08-26 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011132591A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101540039B1 (ko) 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
DE112011101395B4 (de) 2010-04-23 2014-10-16 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
US12015066B2 (en) 2020-06-17 2024-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Triple layer high-k gate dielectric stack for workfunction engineering

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182982A (ja) * 1991-07-16 1993-07-23 Toshiba Corp 半導体装置およびその製造方法
JPH07263680A (ja) * 1994-03-24 1995-10-13 Hitachi Ltd 半導体装置の製造方法
US5523603A (en) * 1990-04-16 1996-06-04 Digital Equipment Corporation Semiconductor device with reduced time-dependent dielectric failures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108358A (ja) * 1982-12-13 1984-06-22 Fujitsu Ltd 半導体装置
JPS6465872A (en) * 1987-09-05 1989-03-13 Fujitsu Ltd Manufacture of semiconductor device
JPH0198230A (ja) * 1987-10-09 1989-04-17 Fujitsu Ltd 半導体装置の製造方法
JPH0196958A (ja) * 1987-10-09 1989-04-14 Fujitsu Ltd 半導体装置の製造方法
US5952701A (en) * 1997-08-18 1999-09-14 National Semiconductor Corporation Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor value

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523603A (en) * 1990-04-16 1996-06-04 Digital Equipment Corporation Semiconductor device with reduced time-dependent dielectric failures
JPH05182982A (ja) * 1991-07-16 1993-07-23 Toshiba Corp 半導体装置およびその製造方法
JPH07263680A (ja) * 1994-03-24 1995-10-13 Hitachi Ltd 半導体装置の製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
05182982
05523603
07263680

Also Published As

Publication number Publication date
JP4581159B2 (ja) 2010-11-17
JP2000183329A (ja) 2000-06-30
KR20000028884A (ko) 2000-05-25
US20030011035A1 (en) 2003-01-16
US6417565B1 (en) 2002-07-09

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