JP2000058920A - 半導体およびその製造方法 - Google Patents

半導体およびその製造方法

Info

Publication number
JP2000058920A
JP2000058920A JP21460299A JP21460299A JP2000058920A JP 2000058920 A JP2000058920 A JP 2000058920A JP 21460299 A JP21460299 A JP 21460299A JP 21460299 A JP21460299 A JP 21460299A JP 2000058920 A JP2000058920 A JP 2000058920A
Authority
JP
Japan
Prior art keywords
layer
ingan
iii
nitride
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21460299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000058920A5 (enExample
Inventor
David P Bour
ポール バー デビット
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JP2000058920A publication Critical patent/JP2000058920A/ja
Publication of JP2000058920A5 publication Critical patent/JP2000058920A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP21460299A 1998-07-31 1999-07-29 半導体およびその製造方法 Pending JP2000058920A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/127,038 1998-07-31
US09/127,038 US6233265B1 (en) 1998-07-31 1998-07-31 AlGaInN LED and laser diode structures for pure blue or green emission

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010292773A Division JP2011082563A (ja) 1998-07-31 2010-12-28 半導体およびその製造方法

Publications (2)

Publication Number Publication Date
JP2000058920A true JP2000058920A (ja) 2000-02-25
JP2000058920A5 JP2000058920A5 (enExample) 2006-09-14

Family

ID=22428012

Family Applications (2)

Application Number Title Priority Date Filing Date
JP21460299A Pending JP2000058920A (ja) 1998-07-31 1999-07-29 半導体およびその製造方法
JP2010292773A Pending JP2011082563A (ja) 1998-07-31 2010-12-28 半導体およびその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010292773A Pending JP2011082563A (ja) 1998-07-31 2010-12-28 半導体およびその製造方法

Country Status (3)

Country Link
US (3) US6233265B1 (enExample)
EP (1) EP0977279A3 (enExample)
JP (2) JP2000058920A (enExample)

Cited By (10)

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JP2003158297A (ja) * 2001-11-13 2003-05-30 Lumileds Lighting Us Llc 分極電界が減少された窒化物半導体デバイス
JP2005136005A (ja) * 2003-10-28 2005-05-26 Matsushita Electric Works Ltd 発光素子
JP2005311374A (ja) * 2004-04-21 2005-11-04 Lumileds Lighting Us Llc 歪みを制御したｉｉｉ族窒化物発光装置
JP2007096330A (ja) * 2005-09-27 2007-04-12 Philips Lumileds Lightng Co Llc Ｉｉｉ−ｖ族発光デバイス
JP2009026956A (ja) * 2007-07-19 2009-02-05 Sumitomo Electric Ind Ltd 発光素子、発光素子のための基板生産物、および発光素子を作製する方法
JP2009267239A (ja) * 2008-04-28 2009-11-12 Toyoda Gosei Co Ltd 発光装置
JP2010500741A (ja) * 2006-08-11 2010-01-07 シリウム テクノロジーズ インコーポレイテッド 界面特性及び拡散テールが制御された半導体デバイスをｉｖ族基板上に製作する方法
WO2010020065A1 (en) * 2008-08-19 2010-02-25 Lattice Power (Jiangxi) Corporation Method for fabricating ingan-based multi-quantum well layers
US8362460B2 (en) 2006-08-11 2013-01-29 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
WO2014017303A1 (ja) * 2012-07-26 2014-01-30 シャープ株式会社 半導体発光素子

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JP3511372B2 (ja) * 1999-08-31 2004-03-29 シャープ株式会社 半導体発光素子およびそれを使用した表示装置
US6563144B2 (en) * 1999-09-01 2003-05-13 The Regents Of The University Of California Process for growing epitaxial gallium nitride and composite wafers
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JP2002141551A (ja) * 2000-10-31 2002-05-17 Fuji Photo Film Co Ltd 発光ダイオード
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JP3876649B2 (ja) * 2001-06-05 2007-02-07 ソニー株式会社 窒化物半導体レーザ及びその製造方法
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JP2003163369A (ja) * 2001-11-27 2003-06-06 Toyota Central Res & Dev Lab Inc 半導体発光素子及び光伝送装置
US6724013B2 (en) * 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
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US6783592B2 (en) * 2002-10-10 2004-08-31 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
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US20050110040A1 (en) * 2003-11-26 2005-05-26 Hui Peng Texture for localizing and minimizing effects of lattice constants mismatch
KR20050061994A (ko) * 2003-12-19 2005-06-23 삼성전기주식회사 Ｉｎ 도핑을 통한 ＧａＮ 측면 성장 방법
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KR100541110B1 (ko) * 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
US6979835B1 (en) * 2004-09-11 2005-12-27 Formosa Epitaxy Incorporation Gallium-nitride based light-emitting diode epitaxial structure
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CN100369280C (zh) * 2005-04-26 2008-02-13 华宇电脑股份有限公司 发光半导体器件及其形成方法
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Cited By (12)

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Publication number Priority date Publication date Assignee Title
JP2003158297A (ja) * 2001-11-13 2003-05-30 Lumileds Lighting Us Llc 分極電界が減少された窒化物半導体デバイス
JP2005136005A (ja) * 2003-10-28 2005-05-26 Matsushita Electric Works Ltd 発光素子
JP2005311374A (ja) * 2004-04-21 2005-11-04 Lumileds Lighting Us Llc 歪みを制御したｉｉｉ族窒化物発光装置
JP2007096330A (ja) * 2005-09-27 2007-04-12 Philips Lumileds Lightng Co Llc Ｉｉｉ−ｖ族発光デバイス
JP2010500741A (ja) * 2006-08-11 2010-01-07 シリウム テクノロジーズ インコーポレイテッド 界面特性及び拡散テールが制御された半導体デバイスをｉｖ族基板上に製作する方法
US8362460B2 (en) 2006-08-11 2013-01-29 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
JP2009026956A (ja) * 2007-07-19 2009-02-05 Sumitomo Electric Ind Ltd 発光素子、発光素子のための基板生産物、および発光素子を作製する方法
JP2009267239A (ja) * 2008-04-28 2009-11-12 Toyoda Gosei Co Ltd 発光装置
WO2010020065A1 (en) * 2008-08-19 2010-02-25 Lattice Power (Jiangxi) Corporation Method for fabricating ingan-based multi-quantum well layers
WO2014017303A1 (ja) * 2012-07-26 2014-01-30 シャープ株式会社 半導体発光素子
JP2014027092A (ja) * 2012-07-26 2014-02-06 Sharp Corp 半導体発光素子
US9324902B2 (en) 2012-07-26 2016-04-26 Sharp Kabushiki Kaisha Semiconductor light-emitting element

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US6285696B1 (en) 2001-09-04
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EP0977279A2 (en) 2000-02-02
US6233265B1 (en) 2001-05-15

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