EP0977279A3 - AlGalnN LED and laser diode structures - Google Patents
AlGalnN LED and laser diode structures Download PDFInfo
- Publication number
- EP0977279A3 EP0977279A3 EP99305694A EP99305694A EP0977279A3 EP 0977279 A3 EP0977279 A3 EP 0977279A3 EP 99305694 A EP99305694 A EP 99305694A EP 99305694 A EP99305694 A EP 99305694A EP 0977279 A3 EP0977279 A3 EP 0977279A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- ingan
- gan
- active region
- thick
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000956 alloy Substances 0.000 abstract 5
- 229910045601 alloy Inorganic materials 0.000 abstract 5
- 229910052738 indium Inorganic materials 0.000 abstract 3
- 238000005204 segregation Methods 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 230000005693 optoelectronics Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000003292 diminished effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000001429 visible spectrum Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US127038 | 1998-07-31 | ||
| US09/127,038 US6233265B1 (en) | 1998-07-31 | 1998-07-31 | AlGaInN LED and laser diode structures for pure blue or green emission |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0977279A2 EP0977279A2 (en) | 2000-02-02 |
| EP0977279A3 true EP0977279A3 (en) | 2001-01-03 |
Family
ID=22428012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP99305694A Withdrawn EP0977279A3 (en) | 1998-07-31 | 1999-07-19 | AlGalnN LED and laser diode structures |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US6233265B1 (enExample) |
| EP (1) | EP0977279A3 (enExample) |
| JP (2) | JP2000058920A (enExample) |
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| JP2001119102A (ja) * | 1999-10-15 | 2001-04-27 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体レーザダイオード |
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| GB2365208A (en) * | 2000-07-19 | 2002-02-13 | Juses Chao | Amorphous alingan light emitting diode |
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| DE19613265C1 (de) * | 1996-04-02 | 1997-04-17 | Siemens Ag | Bauelement in stickstoffhaltigem Halbleitermaterial |
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- 1998-07-31 US US09/127,038 patent/US6233265B1/en not_active Expired - Lifetime
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1999
- 1999-07-19 EP EP99305694A patent/EP0977279A3/en not_active Withdrawn
- 1999-07-28 US US09/363,314 patent/US6285696B1/en not_active Expired - Lifetime
- 1999-07-28 US US09/363,251 patent/US6345063B1/en not_active Expired - Lifetime
- 1999-07-29 JP JP21460299A patent/JP2000058920A/ja active Pending
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2010
- 2010-12-28 JP JP2010292773A patent/JP2011082563A/ja active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| US6345063B1 (en) | 2002-02-05 |
| US6233265B1 (en) | 2001-05-15 |
| US6285696B1 (en) | 2001-09-04 |
| JP2000058920A (ja) | 2000-02-25 |
| EP0977279A2 (en) | 2000-02-02 |
| JP2011082563A (ja) | 2011-04-21 |
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