JP2000031084A - 化合物半導体薄膜のｐ型への活性化方法 - Google Patents

化合物半導体薄膜のｐ型への活性化方法

Info

Publication number
JP2000031084A
JP2000031084A JP12737099A JP12737099A JP2000031084A JP 2000031084 A JP2000031084 A JP 2000031084A JP 12737099 A JP12737099 A JP 12737099A JP 12737099 A JP12737099 A JP 12737099A JP 2000031084 A JP2000031084 A JP 2000031084A
Authority
JP
Japan
Prior art keywords
thin film
compound semiconductor
semiconductor thin
type impurity
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12737099A
Other languages
English (en)
Japanese (ja)
Inventor
Gengi Shin
鉉 義 申
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2000031084A publication Critical patent/JP2000031084A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
JP12737099A 1998-05-08 1999-05-07 化合物半導体薄膜のｐ型への活性化方法 Pending JP2000031084A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1998P16501 1998-05-08
KR19980016501 1998-05-08

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009091746A Division JP2009152644A (ja) 1998-05-08 2009-04-06 化合物半導体薄膜のｐ型への活性化方法

Publications (1)

Publication Number Publication Date
JP2000031084A true JP2000031084A (ja) 2000-01-28

Family

ID=19537147

Family Applications (2)

Application Number Title Priority Date Filing Date
JP12737099A Pending JP2000031084A (ja) 1998-05-08 1999-05-07 化合物半導体薄膜のｐ型への活性化方法
JP2009091746A Pending JP2009152644A (ja) 1998-05-08 2009-04-06 化合物半導体薄膜のｐ型への活性化方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009091746A Pending JP2009152644A (ja) 1998-05-08 2009-04-06 化合物半導体薄膜のｐ型への活性化方法

Country Status (5)

Country Link
US (2) US6242328B1 (zh)
JP (2) JP2000031084A (zh)
KR (1) KR100499117B1 (zh)
CN (2) CN1145224C (zh)
TW (1) TW501160B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
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EP1179859A2 (en) * 2000-08-10 2002-02-13 Sony Corporation Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
US6479313B1 (en) 2001-05-25 2002-11-12 Kopin Corporation Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes
JP2007173854A (ja) * 2007-01-29 2007-07-05 Sony Corp 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
JP2017208429A (ja) * 2016-05-18 2017-11-24 富士電機株式会社 処理装置および半導体装置の製造方法

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JP3256084B2 (ja) * 1994-05-26 2002-02-12 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
JP3846150B2 (ja) * 2000-03-27 2006-11-15 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子および電極形成方法
JP3285341B2 (ja) * 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP2002043619A (ja) * 2000-07-27 2002-02-08 Shiro Sakai 窒化ガリウム系化合物半導体素子の製造方法
JP3466144B2 (ja) 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP2002208541A (ja) * 2001-01-11 2002-07-26 Shiro Sakai 窒化物系半導体装置及びその製造方法
JP3520919B2 (ja) 2001-03-27 2004-04-19 士郎 酒井 窒化物系半導体装置の製造方法
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
EP1333478A1 (en) * 2002-01-23 2003-08-06 Shiro Sakai Method for manufacturing gallium nitride compound semiconductor element and gallium nitride compound semiconductor element
US6888875B2 (en) * 2002-01-28 2005-05-03 Fuji Photo Film Co., Ltd. Light source apparatus equipped with a GaN type semiconductor laser, a method of eliminating stray light, and an image forming apparatus
US7005685B2 (en) * 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
JP2004134750A (ja) * 2002-09-19 2004-04-30 Toyoda Gosei Co Ltd ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法
KR101034055B1 (ko) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
GB2432455A (en) * 2005-11-17 2007-05-23 Sharp Kk Growth of a semiconductor layer structure
CN100382243C (zh) * 2006-06-09 2008-04-16 河北工业大学 提高p型硅外延电阻率一致性的控制方法
KR101034059B1 (ko) 2010-01-15 2011-05-12 엘지이노텍 주식회사 발광 소자 활성화 장치 및 이를 이용한 발광 소자 활성화 방법
US8325127B2 (en) 2010-06-25 2012-12-04 Au Optronics Corporation Shift register and architecture of same on a display panel
JP6190582B2 (ja) * 2012-10-26 2017-08-30 古河電気工業株式会社 窒化物半導体装置の製造方法
CN104638070B (zh) * 2015-03-06 2017-08-18 天津三安光电有限公司 一种光电器件的制备方法
CN115295405B (zh) * 2022-09-30 2023-03-21 北京大学 一种提高宽禁带半导体载流子浓度的方法

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JPH0797300A (ja) * 1993-09-27 1995-04-11 Hitachi Cable Ltd 窒化ガリウム系結晶の熱処理方法
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
JPH09266218A (ja) * 1996-03-28 1997-10-07 Nippon Steel Corp ｐ型化合物半導体の低抵抗化方法
JPH1012624A (ja) * 1996-06-21 1998-01-16 Sony Corp 窒化物系化合物半導体の熱処理方法
JPH11126758A (ja) * 1997-10-24 1999-05-11 Pioneer Electron Corp 半導体素子製造方法
JPH11186174A (ja) * 1997-12-24 1999-07-09 Toshiba Electronic Engineering Corp 半導体装置及びその製造方法
JPH11238692A (ja) * 1998-02-23 1999-08-31 Nichia Chem Ind Ltd 窒化物半導体の低抵抗化方法

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US5328855A (en) * 1991-07-25 1994-07-12 Matsushita Electric Industrial Co., Ltd. Formation of semiconductor diamond
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
JP2790235B2 (ja) * 1993-04-28 1998-08-27 日亜化学工業株式会社 窒化ガリウム系化合物半導体のｐ型化方法
JP2814049B2 (ja) * 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
DE69503299T2 (de) * 1994-04-20 1999-01-21 Toyoda Gosei Kk Galliumnitrid-Diodenlaser und Verfahren zu seiner Herstellung
JP3256084B2 (ja) * 1994-05-26 2002-02-12 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device
JP2666237B2 (ja) * 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
JP3250438B2 (ja) * 1995-03-29 2002-01-28 日亜化学工業株式会社 窒化物半導体発光素子
JP3478012B2 (ja) * 1995-09-29 2003-12-10 ソニー株式会社 薄膜半導体装置の製造方法
JP3512933B2 (ja) * 1996-01-25 2004-03-31 株式会社東芝 電界放出型冷陰極装置及びその製造方法
JP3587224B2 (ja) * 1996-07-24 2004-11-10 ソニー株式会社 オーミック電極
JPH1065216A (ja) * 1996-08-22 1998-03-06 Toyoda Gosei Co Ltd ３族窒化物半導体素子
JPH1070082A (ja) * 1996-08-27 1998-03-10 Sony Corp ｐ型窒化物系ＩＩＩ−Ｖ族化合物半導体層の作製方法
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
JP3322179B2 (ja) * 1997-08-25 2002-09-09 松下電器産業株式会社 窒化ガリウム系半導体発光素子
US5926726A (en) * 1997-09-12 1999-07-20 Sdl, Inc. In-situ acceptor activation in group III-v nitride compound semiconductors

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0797300A (ja) * 1993-09-27 1995-04-11 Hitachi Cable Ltd 窒化ガリウム系結晶の熱処理方法
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
JPH09266218A (ja) * 1996-03-28 1997-10-07 Nippon Steel Corp ｐ型化合物半導体の低抵抗化方法
JPH1012624A (ja) * 1996-06-21 1998-01-16 Sony Corp 窒化物系化合物半導体の熱処理方法
JPH11126758A (ja) * 1997-10-24 1999-05-11 Pioneer Electron Corp 半導体素子製造方法
JPH11186174A (ja) * 1997-12-24 1999-07-09 Toshiba Electronic Engineering Corp 半導体装置及びその製造方法
JPH11238692A (ja) * 1998-02-23 1999-08-31 Nichia Chem Ind Ltd 窒化物半導体の低抵抗化方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1179859A2 (en) * 2000-08-10 2002-02-13 Sony Corporation Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
JP2002057161A (ja) * 2000-08-10 2002-02-22 Sony Corp 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
EP1179859A3 (en) * 2000-08-10 2009-09-30 Sony Corporation Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
JP4581198B2 (ja) * 2000-08-10 2010-11-17 ソニー株式会社 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
US6479313B1 (en) 2001-05-25 2002-11-12 Kopin Corporation Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes
JP2007173854A (ja) * 2007-01-29 2007-07-05 Sony Corp 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
JP2017208429A (ja) * 2016-05-18 2017-11-24 富士電機株式会社 処理装置および半導体装置の製造方法

Also Published As

Publication number Publication date
KR100499117B1 (ko) 2005-07-04
CN1495923A (zh) 2004-05-12
US20010012679A1 (en) 2001-08-09
US6495433B2 (en) 2002-12-17
CN1241820A (zh) 2000-01-19
TW501160B (en) 2002-09-01
JP2009152644A (ja) 2009-07-09
CN1284251C (zh) 2006-11-08
CN1145224C (zh) 2004-04-07
KR19990088118A (ko) 1999-12-27
US6242328B1 (en) 2001-06-05

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