IT1271946B - Dispositivo di memoria a semiconduttore con struttura a tripla zona a pozzetto - Google Patents

Dispositivo di memoria a semiconduttore con struttura a tripla zona a pozzetto

Info

Publication number
IT1271946B
IT1271946B ITMI930230A ITMI930230A IT1271946B IT 1271946 B IT1271946 B IT 1271946B IT MI930230 A ITMI930230 A IT MI930230A IT MI930230 A ITMI930230 A IT MI930230A IT 1271946 B IT1271946 B IT 1271946B
Authority
IT
Italy
Prior art keywords
type
conductivity
group
power
wells
Prior art date
Application number
ITMI930230A
Other languages
English (en)
Inventor
Dong-Jae Lee
Dong-Sun Min
Dong-Soo Jun
Yong-Sik Seok
Original Assignee
Samsung Electronics Co Ltd
Modiano Guido
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Modiano Guido filed Critical Samsung Electronics Co Ltd
Publication of ITMI930230A0 publication Critical patent/ITMI930230A0/it
Publication of ITMI930230A1 publication Critical patent/ITMI930230A1/it
Application granted granted Critical
Publication of IT1271946B publication Critical patent/IT1271946B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Un dispositivo e smiconduttore con una regione della matrice a cella di memoria e una regione del circuito periferico integrate in un substrato di conduttività del primo tipo che comprende un primo gruppo di piazzuole o pad di alimentazione per alimentare solamente la regione della matrice a cella di memoria, un secondo gruppo di pad di alimentazione per alimentare solamente la regione del circuito periferico, un terzo gruppo di pad di alimentazione per alimentare solo la plu-ralità di linee di parola e le memorie temporanee o buffer di ingresso TTL, un terzo gruppo di pad di alimentazione per alimentare solo gli elementi di comando di uscita dei dati, primi well di conduttività del secondo tipo con almeno primi well di conduttività del primo tipo formati nella regione della matrice a cella di memoria e collegati con il primo gruppo di pad di alimentazione, secondi well del secondo tipo di conduttività con almeno primi well del primo tipo di conduttivitá formati nella regione del circuito periferico e collegati con il secondo gruppo di pad di alimentazione, una prima pluralità di transistori MOS del secondo tipo di conduttività formati nei primi well del primo tipo di conduttività e collegati con il terzo gruppo di pad di alimentazione e una seconda pluralità di transistori MOS del secondo tipo di conduttività formati nei secondi well del primo tipo di conduttività e collegati con il quarto gruppo di pad di alimentazione.
ITMI930230A 1992-07-13 1993-02-10 Dispositivo di memoria a semiconduttore con struttura a tripla zona a pozzetto IT1271946B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920012438A KR940003026A (ko) 1992-07-13 1992-07-13 트리플웰을 이용한 반도체장치

Publications (3)

Publication Number Publication Date
ITMI930230A0 ITMI930230A0 (it) 1993-02-10
ITMI930230A1 ITMI930230A1 (it) 1994-08-10
IT1271946B true IT1271946B (it) 1997-06-10

Family

ID=19336233

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI930230A IT1271946B (it) 1992-07-13 1993-02-10 Dispositivo di memoria a semiconduttore con struttura a tripla zona a pozzetto

Country Status (7)

Country Link
JP (1) JPH0685200A (it)
KR (1) KR940003026A (it)
DE (1) DE4300826A1 (it)
FR (1) FR2693587A1 (it)
GB (1) GB2269049A (it)
IT (1) IT1271946B (it)
TW (1) TW210402B (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3002371B2 (ja) 1993-11-22 2000-01-24 富士通株式会社 半導体装置とその製造方法
US5595925A (en) * 1994-04-29 1997-01-21 Texas Instruments Incorporated Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein
JPH10502181A (ja) 1994-06-20 1998-02-24 ネオマジック・コーポレイション メモリインタフェースのないグラフィックスコントローラ集積回路
JP4037470B2 (ja) 1994-06-28 2008-01-23 エルピーダメモリ株式会社 半導体装置
US5696721A (en) * 1995-05-05 1997-12-09 Texas Instruments Incorporated Dynamic random access memory having row decoder with level translator for driving a word line voltage above and below an operating supply voltage range
JPH0955483A (ja) * 1995-06-09 1997-02-25 Mitsubishi Electric Corp 半導体記憶装置
TW328641B (en) 1995-12-04 1998-03-21 Hitachi Ltd Semiconductor integrated circuit device and process for producing the same
US6750527B1 (en) 1996-05-30 2004-06-15 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having a plurality of wells, test method of testing the semiconductor integrated circuit device, and test device which executes the test method
JP4534163B2 (ja) * 1997-06-16 2010-09-01 エルピーダメモリ株式会社 半導体集積回路装置
JP4014708B2 (ja) 1997-08-21 2007-11-28 株式会社ルネサステクノロジ 半導体集積回路装置の設計方法
KR100275725B1 (ko) * 1997-12-27 2000-12-15 윤종용 트리플웰 구조를 갖는 반도체 메모리 장치 및 그 제조방법
JP2000101045A (ja) * 1998-07-23 2000-04-07 Mitsubishi Electric Corp 半導体装置
JP2001291779A (ja) * 2000-04-05 2001-10-19 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPWO2003003461A1 (ja) * 2001-06-27 2004-10-21 株式会社ルネサステクノロジ 半導体集積回路装置及び雑音低減方法
US6930930B2 (en) * 2002-11-06 2005-08-16 Infineon Technologies Ag Using isolated p-well transistor arrangements to avoid leakage caused by word line/bit line shorts
TWI256724B (en) * 2003-08-06 2006-06-11 Sanyo Electric Co Semiconductor device
KR100571650B1 (ko) 2005-03-31 2006-04-17 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
DE102005030372A1 (de) * 2005-06-29 2007-01-04 Infineon Technologies Ag Vorrichtung und Verfahren zur Regelung der Schwellspannung eines Transistors, insbesondere eines Transistors eines Leseverstärkers eines Halbleiter- Speicherbauelements
JP4967478B2 (ja) 2006-06-30 2012-07-04 富士通セミコンダクター株式会社 半導体装置とその製造方法
JP5022643B2 (ja) * 2006-07-13 2012-09-12 株式会社東芝 半導体装置のｅｓｄ保護回路
KR100817417B1 (ko) * 2006-12-26 2008-03-27 동부일렉트로닉스 주식회사 고전압 씨모스 소자 및 그 제조 방법
JP5104377B2 (ja) * 2008-02-15 2012-12-19 セイコーエプソン株式会社 電圧安定化装置
KR101610829B1 (ko) 2009-12-15 2016-04-11 삼성전자주식회사 트리플 웰 구조를 가지는 플래시 메모리 소자
KR101585616B1 (ko) 2009-12-16 2016-01-15 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11251148B2 (en) * 2020-01-28 2022-02-15 Micron Technology, Inc. Semiconductor devices including array power pads, and associated semiconductor device packages and systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155555A (ja) * 1985-09-18 1987-07-10 Sony Corp 相補型ｍｏｓトランジスタ
DE3900769A1 (de) * 1989-01-12 1990-08-09 Fraunhofer Ges Forschung Integrierte schaltung mit zumindest einem n-kanal-fet und zumindest einem p-kanal-fet
US5157281A (en) * 1991-07-12 1992-10-20 Texas Instruments Incorporated Level-shifter circuit for integrated circuits

Also Published As

Publication number Publication date
ITMI930230A0 (it) 1993-02-10
TW210402B (en) 1993-08-01
ITMI930230A1 (it) 1994-08-10
GB9304655D0 (en) 1993-04-28
JPH0685200A (ja) 1994-03-25
FR2693587A1 (fr) 1994-01-14
DE4300826A1 (de) 1994-01-20
GB2269049A (en) 1994-01-26
KR940003026A (ko) 1994-02-19

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960429