IT1244544B - Cella di memoria ad accesso dinamico a condensatori del tipo a solchi impilati miscelati - Google Patents
Cella di memoria ad accesso dinamico a condensatori del tipo a solchi impilati miscelatiInfo
- Publication number
- IT1244544B IT1244544B ITMI910245A ITMI910245A IT1244544B IT 1244544 B IT1244544 B IT 1244544B IT MI910245 A ITMI910245 A IT MI910245A IT MI910245 A ITMI910245 A IT MI910245A IT 1244544 B IT1244544 B IT 1244544B
- Authority
- IT
- Italy
- Prior art keywords
- memory cell
- access memory
- stacked
- capacitor
- slot type
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 8
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900016121A KR930005738B1 (ko) | 1990-10-11 | 1990-10-11 | Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITMI910245A0 ITMI910245A0 (it) | 1991-02-01 |
| ITMI910245A1 ITMI910245A1 (it) | 1992-08-01 |
| IT1244544B true IT1244544B (it) | 1994-07-15 |
Family
ID=19304521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ITMI910245A IT1244544B (it) | 1990-10-11 | 1991-02-01 | Cella di memoria ad accesso dinamico a condensatori del tipo a solchi impilati miscelati |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0770622B2 (de) |
| KR (1) | KR930005738B1 (de) |
| DE (1) | DE4103596C2 (de) |
| FR (1) | FR2667984B1 (de) |
| GB (1) | GB2248720B (de) |
| IT (1) | IT1244544B (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283726A (ja) * | 1996-02-16 | 1997-10-31 | Nippon Steel Corp | 半導体記憶装置及びその製造方法 |
| KR19990048904A (ko) * | 1997-12-11 | 1999-07-05 | 윤종용 | 반도체 장치의 커패시터 제조방법 |
| DE102005020079A1 (de) * | 2005-04-29 | 2006-06-01 | Infineon Technologies Ag | Hybride Speicherzelle für DRAM |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
| JPH0815207B2 (ja) * | 1986-02-04 | 1996-02-14 | 富士通株式会社 | 半導体記憶装置 |
| JPS63122261A (ja) * | 1986-11-12 | 1988-05-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS63239969A (ja) * | 1987-03-27 | 1988-10-05 | Sony Corp | メモリ装置 |
| JP2621181B2 (ja) * | 1987-06-12 | 1997-06-18 | 日本電気株式会社 | Ｍｉｓ型半導体記憶装置 |
| JPH02106958A (ja) * | 1988-10-17 | 1990-04-19 | Hitachi Ltd | 半導体装置 |
| JPH02116160A (ja) * | 1988-10-26 | 1990-04-27 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
| KR950000500B1 (ko) * | 1989-08-31 | 1995-01-24 | 금성일렉트론 주식회사 | 디램셀 커패시터 제조방법 및 구조 |
-
1990
- 1990-10-11 KR KR1019900016121A patent/KR930005738B1/ko not_active IP Right Cessation
-
1991
- 1991-01-21 GB GB9101316A patent/GB2248720B/en not_active Expired - Lifetime
- 1991-02-01 IT ITMI910245A patent/IT1244544B/it active IP Right Grant
- 1991-02-01 FR FR919101188A patent/FR2667984B1/fr not_active Expired - Lifetime
- 1991-02-04 DE DE4103596A patent/DE4103596C2/de not_active Expired - Lifetime
- 1991-09-12 JP JP3260430A patent/JPH0770622B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE4103596A1 (de) | 1992-04-16 |
| FR2667984B1 (fr) | 1993-01-08 |
| ITMI910245A0 (it) | 1991-02-01 |
| GB2248720A (en) | 1992-04-15 |
| ITMI910245A1 (it) | 1992-08-01 |
| JPH0770622B2 (ja) | 1995-07-31 |
| DE4103596C2 (de) | 1994-02-24 |
| KR930005738B1 (ko) | 1993-06-24 |
| KR920008931A (ko) | 1992-05-28 |
| JPH06342887A (ja) | 1994-12-13 |
| GB9101316D0 (en) | 1991-03-06 |
| FR2667984A1 (fr) | 1992-04-17 |
| GB2248720B (en) | 1995-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted | ||
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970225 |