IT1164278B - Memoria di sola lettura a semiconduttori - Google Patents

Memoria di sola lettura a semiconduttori

Info

Publication number
IT1164278B
IT1164278B IT21878/83A IT2187883A IT1164278B IT 1164278 B IT1164278 B IT 1164278B IT 21878/83 A IT21878/83 A IT 21878/83A IT 2187883 A IT2187883 A IT 2187883A IT 1164278 B IT1164278 B IT 1164278B
Authority
IT
Italy
Prior art keywords
memory
semiconductor reading
reading
semiconductor
Prior art date
Application number
IT21878/83A
Other languages
English (en)
Other versions
IT8321878A0 (it
Inventor
Sakai Kikuo
Onishi Yoshiaki
Original Assignee
Hitachi Ltd
Hitachi Microcumputer Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcumputer Eng filed Critical Hitachi Ltd
Publication of IT8321878A0 publication Critical patent/IT8321878A0/it
Application granted granted Critical
Publication of IT1164278B publication Critical patent/IT1164278B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
IT21878/83A 1982-07-02 1983-06-30 Memoria di sola lettura a semiconduttori IT1164278B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57113916A JPS595497A (ja) 1982-07-02 1982-07-02 半導体ｒｏｍ

Publications (2)

Publication Number Publication Date
IT8321878A0 IT8321878A0 (it) 1983-06-30
IT1164278B true IT1164278B (it) 1987-04-08

Family

ID=14624398

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21878/83A IT1164278B (it) 1982-07-02 1983-06-30 Memoria di sola lettura a semiconduttori

Country Status (10)

Country Link
US (1) US4592024A (it)
JP (1) JPS595497A (it)
KR (1) KR910005970B1 (it)
DE (1) DE3323847A1 (it)
FR (1) FR2529702A1 (it)
GB (1) GB2123587B (it)
HK (1) HK1988A (it)
IT (1) IT1164278B (it)
MY (1) MY8700797A (it)
SG (1) SG87187G (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59185098A (ja) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd 自己診断回路内蔵型半導体メモリ装置
NL8401569A (nl) * 1984-05-16 1985-12-16 Philips Nv Serie-parallel-serie-digitaal werkend systeem.
US4796233A (en) * 1984-10-19 1989-01-03 Fujitsu Limited Bipolar-transistor type semiconductor memory device having redundancy configuration
US4744060A (en) * 1984-10-19 1988-05-10 Fujitsu Limited Bipolar-transistor type random access memory having redundancy configuration
JPS61267846A (ja) * 1984-11-12 1986-11-27 Nec Corp メモリを有する集積回路装置
EP0195429A3 (en) 1985-03-20 1989-03-22 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS6214399A (ja) * 1985-07-12 1987-01-22 Fujitsu Ltd 半導体記憶装置
JPS6246483A (ja) * 1985-08-22 1987-02-28 Casio Comput Co Ltd Ｉｃカ−ドにおけるデ−タ書込み方式
US4722084A (en) * 1985-10-02 1988-01-26 Itt Corporation Array reconfiguration apparatus and methods particularly adapted for use with very large scale integrated circuits
JP2515097B2 (ja) * 1985-10-08 1996-07-10 日本テキサス・インスツルメンツ 株式会社 半導体記憶装置
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
EP0257120B1 (de) * 1986-08-22 1992-06-10 International Business Machines Corporation Dekodierverfahren und -Schaltungsanordnung für einen redundanten CMOS-Halbleiterspeicher
JPH0668917B2 (ja) * 1987-05-15 1994-08-31 日本電気株式会社 メモリ素子入換制御回路
JPH01183000A (ja) * 1988-01-14 1989-07-20 Mitsubishi Electric Corp 誤り訂正回路を有する半導体メモリ装置
DE68928112T2 (de) * 1988-03-18 1997-11-20 Toshiba Kawasaki Kk Masken-rom mit Ersatzspeicherzellen
US4905200A (en) * 1988-08-29 1990-02-27 Ford Motor Company Apparatus and method for correcting microcomputer software errors
JP2664236B2 (ja) * 1989-02-01 1997-10-15 富士通株式会社 半導体記憶装置
FR2684206B1 (fr) * 1991-11-25 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de lecture de fusible de redondance pour memoire integree.
JPH06119796A (ja) * 1992-10-06 1994-04-28 Texas Instr Japan Ltd 欠陥メモリセル救済用デコーダ
JP3215566B2 (ja) * 1994-01-31 2001-10-09 富士通株式会社 半導体記憶装置
JP3552882B2 (ja) 1997-08-22 2004-08-11 富士通株式会社 半導体記憶装置
FR2781918B1 (fr) 1998-07-31 2000-10-06 St Microelectronics Sa Memoire rom a correction par redondance
US6570795B1 (en) * 2002-04-10 2003-05-27 Hewlett-Packard Development Company, L.P. Defective memory component of a memory device used to represent a data bit in a bit sequence
EP2095234B1 (en) * 2006-11-21 2014-04-09 Freescale Semiconductor, Inc. Memory system with ecc-unit and further processing arrangement
US8365044B2 (en) * 2007-04-23 2013-01-29 Agere Systems Inc. Memory device with error correction based on automatic logic inversion
US11068341B2 (en) 2019-09-05 2021-07-20 Microchip Technology Inc. Error tolerant memory array and method for performing error correction in a memory array

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245049A (en) * 1963-12-24 1966-04-05 Ibm Means for correcting bad memory bits by bit address storage
DE1524849A1 (de) * 1966-09-23 1970-10-22 Gen Precision Inc Schaltungsanordnung zur Durchfuehrung von Lese- und Schreibvorgaengen in einem Magnetspeicher
DE1290973B (de) * 1967-05-23 1969-03-20 Siemens Ag Supraleitender Speicher
US3585378A (en) * 1969-06-30 1971-06-15 Ibm Error detection scheme for memories
DE2036517B2 (de) * 1970-07-23 1972-10-19 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum betrieb eines schadhafte speicherelemente enthaltenden speichers fuer programmgesteuerte elektronische datenverarbeitungsanlagen
FR2109452A5 (it) * 1970-10-16 1972-05-26 Honeywell Bull Soc Ind
JPS51138340A (en) * 1975-05-26 1976-11-29 Hitachi Ltd Memory system
NL7607336A (nl) * 1975-07-03 1977-01-05 Texas Instruments Inc Van cellen voorziene adresseerbare stelsels, zoals geheugenstelsels.
US4047163A (en) * 1975-07-03 1977-09-06 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4028683A (en) * 1975-10-16 1977-06-07 Bell Telephone Laboratories, Incorporated Memory patching circuit with counter
US4055754A (en) * 1975-12-22 1977-10-25 Chesley Gilman D Memory device and method of testing the same
US4100403A (en) * 1977-04-25 1978-07-11 International Business Machines Corporation Method and means for discriminating between systematic and noise-induced error in data extracted from word organized memory arrays
IT1089225B (it) * 1977-12-23 1985-06-18 Honeywell Inf Systems Memoria con dispositivo rivelatore e correttore a intervento selettivo
JPS551607A (en) * 1978-06-16 1980-01-08 Nec Corp Read data correction system of mask read-only memory
GB2043308A (en) * 1978-08-17 1980-10-01 Xerox Corp Microcomputer controller having field programmable memory
US4489402A (en) * 1981-04-25 1984-12-18 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device

Also Published As

Publication number Publication date
KR910005970B1 (ko) 1991-08-09
US4592024A (en) 1986-05-27
MY8700797A (en) 1987-12-31
HK1988A (en) 1988-01-15
GB2123587A (en) 1984-02-01
SG87187G (en) 1988-05-20
GB8312914D0 (en) 1983-06-15
JPS595497A (ja) 1984-01-12
GB2123587B (en) 1985-10-23
KR850000793A (ko) 1985-03-09
IT8321878A0 (it) 1983-06-30
DE3323847A1 (de) 1984-01-05
FR2529702A1 (fr) 1984-01-06

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950629