IT1163140B - Dispositivo di memoria non volatile,a porta non elettricamemnte collegata,alterabile elettricamente - Google Patents

Dispositivo di memoria non volatile,a porta non elettricamemnte collegata,alterabile elettricamente

Info

Publication number
IT1163140B
IT1163140B IT19951/83A IT1995183A IT1163140B IT 1163140 B IT1163140 B IT 1163140B IT 19951/83 A IT19951/83 A IT 19951/83A IT 1995183 A IT1995183 A IT 1995183A IT 1163140 B IT1163140 B IT 1163140B
Authority
IT
Italy
Prior art keywords
memory device
volatile memory
electrically
electrically connected
connected door
Prior art date
Application number
IT19951/83A
Other languages
English (en)
Other versions
IT8319951A0 (it
Inventor
Rodney Lee Angle
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8319951A0 publication Critical patent/IT8319951A0/it
Application granted granted Critical
Publication of IT1163140B publication Critical patent/IT1163140B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
IT19951/83A 1982-03-09 1983-03-08 Dispositivo di memoria non volatile,a porta non elettricamemnte collegata,alterabile elettricamente IT1163140B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8206900 1982-03-09

Publications (2)

Publication Number Publication Date
IT8319951A0 IT8319951A0 (it) 1983-03-08
IT1163140B true IT1163140B (it) 1987-04-08

Family

ID=10528890

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19951/83A IT1163140B (it) 1982-03-09 1983-03-08 Dispositivo di memoria non volatile,a porta non elettricamemnte collegata,alterabile elettricamente

Country Status (7)

Country Link
US (1) US4417264A (it)
JP (1) JPS59500343A (it)
DE (1) DE3334296T1 (it)
GB (1) GB2126788B (it)
IT (1) IT1163140B (it)
SE (1) SE438043B (it)
WO (1) WO1983003167A1 (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513397A (en) * 1982-12-10 1985-04-23 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
US4558339A (en) * 1982-03-09 1985-12-10 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
EP0123249B1 (en) * 1983-04-18 1990-08-01 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating gate
US4590503A (en) * 1983-07-21 1986-05-20 Honeywell Inc. Electrically erasable programmable read only memory
EP0133667A3 (en) * 1983-08-12 1987-08-26 American Microsystems, Incorporated High coupling ratio dense electrically erasable programmable read-only memory
FR2562707A1 (fr) * 1984-04-06 1985-10-11 Efcis Point-memoire electriquement effacable et reprogrammable, comportant une grille flottante au-dessus d'une grille de commande
IT1213229B (it) * 1984-10-23 1989-12-14 Ates Componenti Elettron Cella di memoria non volatile di tipo merged con gate flottante sovrapposta alla gate di controllo e selezione.
IT1199828B (it) * 1986-12-22 1989-01-05 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit
USRE37308E1 (en) * 1986-12-22 2001-08-07 Stmicroelectronics S.R.L. EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit
JPH07120719B2 (ja) * 1987-12-02 1995-12-20 三菱電機株式会社 半導体記憶装置
JPH07120720B2 (ja) * 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
JPH07101713B2 (ja) * 1988-06-07 1995-11-01 三菱電機株式会社 半導体記憶装置の製造方法
JP2600301B2 (ja) * 1988-06-28 1997-04-16 三菱電機株式会社 半導体記憶装置およびその製造方法
US5231041A (en) * 1988-06-28 1993-07-27 Mitsubishi Denki Kabushiki Kaisha Manufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gate
JP2547622B2 (ja) * 1988-08-26 1996-10-23 三菱電機株式会社 不揮発性半導体記憶装置
US4959701A (en) * 1989-05-01 1990-09-25 Westinghouse Electric Corp. Variable sensitivity floating gate photosensor
US4961002A (en) * 1989-07-13 1990-10-02 Intel Corporation Synapse cell employing dual gate transistor structure
JP3124334B2 (ja) * 1991-10-03 2001-01-15 株式会社東芝 半導体記憶装置およびその製造方法
US5278439A (en) * 1991-08-29 1994-01-11 Ma Yueh Y Self-aligned dual-bit split gate (DSG) flash EEPROM cell
EP0740854B1 (en) * 1991-08-29 2003-04-23 Hyundai Electronics Industries Co., Ltd. A self-aligned dual-bit split gate (dsg) flash eeprom cell
US5457061A (en) * 1994-07-15 1995-10-10 United Microelectronics Corporation Method of making top floating-gate flash EEPROM structure
JP2846822B2 (ja) * 1994-11-28 1999-01-13 モトローラ株式会社 ２層フローティングゲート構造のマルチビット対応セルを有する不揮発性メモリ及びそのプログラム方法
DE19534778C1 (de) * 1995-09-19 1997-04-03 Siemens Ag Verfahren zum Erzeugen der Sourcebereiche eines Flash-EEPROM-Speicherzellenfeldes
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US6103573A (en) 1999-06-30 2000-08-15 Sandisk Corporation Processing techniques for making a dual floating gate EEPROM cell array
US6151248A (en) * 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6091633A (en) * 1999-08-09 2000-07-18 Sandisk Corporation Memory array architecture utilizing global bit lines shared by multiple cells
US6512263B1 (en) * 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP4609533B2 (ja) * 2008-06-12 2011-01-12 セイコーエプソン株式会社 半導体集積回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US3825946A (en) * 1971-01-15 1974-07-23 Intel Corp Electrically alterable floating gate device and method for altering same
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4328565A (en) * 1980-04-07 1982-05-04 Eliyahou Harari Non-volatile eprom with increased efficiency
US4336603A (en) * 1980-06-18 1982-06-22 International Business Machines Corp. Three terminal electrically erasable programmable read only memory

Also Published As

Publication number Publication date
US4417264A (en) 1983-11-22
SE8306016D0 (sv) 1983-11-02
JPS59500343A (ja) 1984-03-01
GB2126788B (en) 1985-06-19
GB8328186D0 (en) 1983-11-23
SE8306016L (sv) 1983-11-02
WO1983003167A1 (en) 1983-09-15
SE438043B (sv) 1985-03-25
GB2126788A (en) 1984-03-28
DE3334296T1 (de) 1984-05-03
IT8319951A0 (it) 1983-03-08

Similar Documents

Publication Publication Date Title
IT1163140B (it) Dispositivo di memoria non volatile,a porta non elettricamemnte collegata,alterabile elettricamente
DE68918880D1 (de) Elektrisch löschbare nichtflüchtige Halbleiterspeichervorrichtung.
BR8103000A (pt) Memoria programavel so-de-leitura, eletricmente apagavel e de baixa tensao
EP0202785A3 (en) Nonvolatile electrically alterable memory
IT7926071A0 (it) Metodo di programmazione per una memoria a semiconduttore nonvolatile elettricamente alterabile.
DE3166342D1 (en) Electrically alterable double dense memory
DE3277665D1 (en) Non-volatile electrically programmable memory device
DE3885408D1 (de) Nichtflüchtige Speicherzelle.
DE69016153D1 (de) Nichtflüchtige Halbleiterspeicheranordnung.
IT8683630A0 (it) Dispositivo di memoria non volatile a semiconduttore.
HK91488A (en) A non-volatile,electrically erasable and reprogrammable memory element
DE3576013D1 (de) Nichtfluechtiger halbleiterspeicher.
IT1123266B (it) Dispositivo di memoria non volatile
IT1171655B (it) Dispositivo di memoria non volatile, a porta non elettricamente collegata, alterabile elettricamente
DE3686144D1 (de) Nichtfluechtiger halbleiterspeicher.
DE69014821D1 (de) Nichtflüchtige Speicheranordung.
DE3852222D1 (de) Nichtflüchtige RAM-Vorrichtung mit flüchtigen Speicherzellen.
DE3583669D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
IT7925552A0 (it) Complesso di dispositivi di memoria, per sole operazioni di lettura, a porta flottante, elettricamente programmabili.
DE68921062D1 (de) Nichtflüchtige Halbleiterspeicheranordnung mit einer Referenzspannungsgeneratorschaltung.
DE3586493D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
IT8222819A0 (it) Dispositivo di memoria nonvolatile.
DE3587615D1 (de) Nichtflüchtige Halbleiterspeicheranordnung.
EP0107290A3 (en) Nonvolatile semiconductor memory device with electrically selectable, erasable and programmable function
DE3278603D1 (de) Non-volatile variable capacity memory device