DE3278603D1 - Non-volatile variable capacity memory device - Google Patents

Non-volatile variable capacity memory device

Info

Publication number
DE3278603D1
DE3278603D1 DE8282109885T DE3278603T DE3278603D1 DE 3278603 D1 DE3278603 D1 DE 3278603D1 DE 8282109885 T DE8282109885 T DE 8282109885T DE 3278603 T DE3278603 T DE 3278603T DE 3278603 D1 DE3278603 D1 DE 3278603D1
Authority
DE
Germany
Prior art keywords
memory device
variable capacity
capacity memory
volatile variable
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282109885T
Other languages
English (en)
Inventor
Zeev Avraham Weinberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3278603D1 publication Critical patent/DE3278603D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE8282109885T 1981-12-31 1982-10-26 Non-volatile variable capacity memory device Expired DE3278603D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/336,477 US4535349A (en) 1981-12-31 1981-12-31 Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing

Publications (1)

Publication Number Publication Date
DE3278603D1 true DE3278603D1 (de) 1988-07-07

Family

ID=23316271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282109885T Expired DE3278603D1 (de) 1981-12-31 1982-10-26 Non-volatile variable capacity memory device

Country Status (4)

Country Link
US (1) US4535349A (de)
EP (1) EP0082936B1 (de)
JP (1) JPS58118090A (de)
DE (1) DE3278603D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688078A (en) * 1982-09-30 1987-08-18 Ning Hseih Partially relaxable composite dielectric structure
US4717943A (en) * 1984-06-25 1988-01-05 International Business Machines Charge storage structure for nonvolatile memories
JPS6113671A (ja) * 1984-06-25 1986-01-21 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション メモリのチヤ−ジ記憶構造
US4656729A (en) * 1985-03-25 1987-04-14 International Business Machines Corp. Dual electron injection structure and process with self-limiting oxidation barrier
JPS6289364A (ja) * 1985-10-16 1987-04-23 Seiko Instr & Electronics Ltd 不揮発性半導体記憶装置
US4861976A (en) * 1988-06-06 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
JPH03236275A (ja) * 1990-02-14 1991-10-22 Olympus Optical Co Ltd メモリ素子およびメモリ装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1460267A (fr) * 1964-12-16 1966-06-17 Philips Nv Dispositif à semi-conducteur
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices
US3896484A (en) * 1970-10-06 1975-07-22 Nishizawa Junichi Intrinsic semiconductor charge transfer device using alternate transfer of electrons and holes
US3859642A (en) * 1973-04-05 1975-01-07 Bell Telephone Labor Inc Random access memory array of hysteresis loop capacitors
JPS5010041A (de) * 1973-05-23 1975-02-01
US3972059A (en) * 1973-12-28 1976-07-27 International Business Machines Corporation Dielectric diode, fabrication thereof, and charge store memory therewith
US4021788A (en) * 1975-05-16 1977-05-03 Burroughs Corporation Capacitor memory cell
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4127900A (en) * 1976-10-29 1978-11-28 Massachusetts Institute Of Technology Reading capacitor memories with a variable voltage ramp
US4242736A (en) * 1976-10-29 1980-12-30 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4164751A (en) * 1976-11-10 1979-08-14 Texas Instruments Incorporated High capacity dynamic ram cell
US4302764A (en) * 1976-12-30 1981-11-24 International Business Machines Corporation Nondestructive read-out dynamic memory cell
US4143393A (en) * 1977-06-21 1979-03-06 International Business Machines Corporation High field capacitor structure employing a carrier trapping region
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4163243A (en) * 1977-09-30 1979-07-31 Hewlett-Packard Company One-transistor memory cell with enhanced capacitance
US4250569A (en) * 1978-11-15 1981-02-10 Fujitsu Limited Semiconductor memory device
US4217601A (en) * 1979-02-15 1980-08-12 International Business Machines Corporation Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure
JPS55113359A (en) * 1979-02-22 1980-09-01 Fujitsu Ltd Semiconductor integrated circuit device
US4247916A (en) * 1979-10-30 1981-01-27 Erb Darrell M Memory device in which one type carrier stored during write controls the flow of the other type carrier during read
US4334292A (en) * 1980-05-27 1982-06-08 International Business Machines Corp. Low voltage electrically erasable programmable read only memory

Also Published As

Publication number Publication date
EP0082936A3 (en) 1985-10-09
EP0082936B1 (de) 1988-06-01
JPS58118090A (ja) 1983-07-13
US4535349A (en) 1985-08-13
EP0082936A2 (de) 1983-07-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee