IN2014CN02652A - - Google Patents

Info

Publication number
IN2014CN02652A
IN2014CN02652A IN2652CHN2014A IN2014CN02652A IN 2014CN02652 A IN2014CN02652 A IN 2014CN02652A IN 2652CHN2014 A IN2652CHN2014 A IN 2652CHN2014A IN 2014CN02652 A IN2014CN02652 A IN 2014CN02652A
Authority
IN
India
Prior art keywords
wafer
slots
bonding
substrates
singulation
Prior art date
Application number
Other languages
English (en)
Inventor
Samber Marc André De
Eric Cornelis Egbertus Van Grunsven
Roy Antoin Bastiaan Engelen
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of IN2014CN02652A publication Critical patent/IN2014CN02652A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
IN2652CHN2014 2011-10-21 2012-10-05 IN2014CN02652A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161549772P 2011-10-21 2011-10-21
PCT/IB2012/055357 WO2013057617A1 (fr) 2011-10-21 2012-10-05 Liaison de tranches à faible déformation par l'utilisation de substrats à fentes

Publications (1)

Publication Number Publication Date
IN2014CN02652A true IN2014CN02652A (fr) 2015-06-26

Family

ID=47324211

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2652CHN2014 IN2014CN02652A (fr) 2011-10-21 2012-10-05

Country Status (8)

Country Link
US (2) US9583676B2 (fr)
EP (1) EP2769406B1 (fr)
JP (1) JP6100789B2 (fr)
KR (1) KR102020001B1 (fr)
CN (1) CN103907175B (fr)
IN (1) IN2014CN02652A (fr)
TW (1) TWI553746B (fr)
WO (1) WO2013057617A1 (fr)

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JP6100789B2 (ja) 2011-10-21 2017-03-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． スロット付き基板を用いることによる低い反りのウエハ接合
CN107248546B (zh) * 2016-08-18 2019-01-18 长春希达电子技术有限公司 表面平整一致的集成封装显示模组及其制造方法
CN108807201B (zh) * 2017-05-03 2023-04-14 叶秀慧 用于防止印刷电路板及晶圆对接时因热膨胀产生扭曲的方法及结构
JP6922788B2 (ja) * 2018-03-05 2021-08-18 三菱電機株式会社 半導体圧力センサ
CN110600416A (zh) * 2018-06-12 2019-12-20 上海新微技术研发中心有限公司 一种薄片基板的加工方法
US11421316B2 (en) * 2018-10-26 2022-08-23 Applied Materials, Inc. Methods and apparatus for controlling warpage in wafer level packaging processes
CN113380614B (zh) * 2021-06-10 2023-04-07 东莞安晟半导体技术有限公司 一种晶圆减薄方法

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Also Published As

Publication number Publication date
EP2769406A1 (fr) 2014-08-27
CN103907175A (zh) 2014-07-02
US9583676B2 (en) 2017-02-28
EP2769406B1 (fr) 2022-03-09
KR102020001B1 (ko) 2019-09-09
TW201320203A (zh) 2013-05-16
US20140252405A1 (en) 2014-09-11
US10084110B2 (en) 2018-09-25
WO2013057617A1 (fr) 2013-04-25
US20170200853A1 (en) 2017-07-13
JP6100789B2 (ja) 2017-03-22
JP2015501536A (ja) 2015-01-15
KR20140079499A (ko) 2014-06-26
TWI553746B (zh) 2016-10-11
CN103907175B (zh) 2018-01-23

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