IL236957B - Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer - Google Patents
Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a waferInfo
- Publication number
- IL236957B IL236957B IL236957A IL23695715A IL236957B IL 236957 B IL236957 B IL 236957B IL 236957 A IL236957 A IL 236957A IL 23695715 A IL23695715 A IL 23695715A IL 236957 B IL236957 B IL 236957B
- Authority
- IL
- Israel
- Prior art keywords
- wafer
- inspecting
- predicting
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10056—Microscopic image
- G06T2207/10061—Microscopic image from scanning electron microscope
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Manufacturing & Machinery (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261678576P | 2012-08-01 | 2012-08-01 | |
| US13/783,291 US8948495B2 (en) | 2012-08-01 | 2013-03-02 | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
| PCT/US2013/053252 WO2014022682A1 (en) | 2012-08-01 | 2013-08-01 | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL236957B true IL236957B (en) | 2018-07-31 |
Family
ID=50025524
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL236957A IL236957B (en) | 2012-08-01 | 2015-01-28 | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
| IL255772A IL255772B (en) | 2012-08-01 | 2017-11-20 | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL255772A IL255772B (en) | 2012-08-01 | 2017-11-20 | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8948495B2 (enExample) |
| EP (1) | EP2880427A1 (enExample) |
| JP (4) | JP6282650B2 (enExample) |
| KR (2) | KR102169564B1 (enExample) |
| CN (1) | CN104620097B (enExample) |
| IL (2) | IL236957B (enExample) |
| TW (1) | TWI591326B (enExample) |
| WO (1) | WO2014022682A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5960198B2 (ja) * | 2013-07-02 | 2016-08-02 | キヤノン株式会社 | パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法 |
| EP3105636B1 (en) | 2014-02-12 | 2023-07-12 | ASML Netherlands B.V. | Method of optimizing a process window |
| US10576603B2 (en) | 2014-04-22 | 2020-03-03 | Kla-Tencor Corporation | Patterned wafer geometry measurements for semiconductor process controls |
| WO2016010776A1 (en) | 2014-07-13 | 2016-01-21 | Kla-Tencor Corporation | Metrology using overlay and yield critical patterns |
| US10712289B2 (en) | 2014-07-29 | 2020-07-14 | Kla-Tencor Corp. | Inspection for multiple process steps in a single inspection process |
| CN107111245B (zh) * | 2014-12-19 | 2019-10-18 | Asml荷兰有限公司 | 测量非对称性的方法、检查设备、光刻系统及器件制造方法 |
| US10036964B2 (en) * | 2015-02-15 | 2018-07-31 | Kla-Tencor Corporation | Prediction based chucking and lithography control optimization |
| GB2536056B (en) * | 2015-03-06 | 2017-07-12 | Blatchford Products Ltd | Lower Limb Prosthesis |
| US10012599B2 (en) * | 2015-04-03 | 2018-07-03 | Kla-Tencor Corp. | Optical die to database inspection |
| US11170072B2 (en) * | 2015-04-10 | 2021-11-09 | ASML Netherands B.V. | Method and apparatus for inspection and metrology |
| US9767548B2 (en) * | 2015-04-24 | 2017-09-19 | Kla-Tencor Corp. | Outlier detection on pattern of interest image populations |
| US9410902B1 (en) | 2015-05-05 | 2016-08-09 | United Microelectronics Corp. | Overlay measurement method |
| US9940429B2 (en) | 2015-06-29 | 2018-04-10 | International Business Machines Corporation | Early overlay prediction and overlay-aware mask design |
| KR20170016681A (ko) * | 2015-08-04 | 2017-02-14 | 에스케이하이닉스 주식회사 | 레지스트레이션 제어된 포토마스크의 결함 검출 방법 |
| US9679100B2 (en) | 2015-08-21 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Environmental-surrounding-aware OPC |
| US9916965B2 (en) * | 2015-12-31 | 2018-03-13 | Kla-Tencor Corp. | Hybrid inspectors |
| US10181185B2 (en) | 2016-01-11 | 2019-01-15 | Kla-Tencor Corp. | Image based specimen process control |
| JP6752593B2 (ja) * | 2016-03-07 | 2020-09-09 | 東レエンジニアリング株式会社 | 欠陥検査装置 |
| US10068323B2 (en) * | 2016-04-10 | 2018-09-04 | Kla-Tencor Corporation | Aware system, method and computer program product for detecting overlay-related defects in multi-patterned fabricated devices |
| US10740888B2 (en) | 2016-04-22 | 2020-08-11 | Kla-Tencor Corporation | Computer assisted weak pattern detection and quantification system |
| KR20190005955A (ko) * | 2016-05-12 | 2019-01-16 | 에이에스엠엘 네델란즈 비.브이. | 측정치 획득 방법, 프로세스 단계 수행 장치, 계측 장치, 디바이스 제조 방법 |
| US10902576B2 (en) * | 2016-08-12 | 2021-01-26 | Texas Instruments Incorporated | System and method for electronic die inking after automatic visual defect inspection |
| US10679909B2 (en) | 2016-11-21 | 2020-06-09 | Kla-Tencor Corporation | System, method and non-transitory computer readable medium for tuning sensitivies of, and determining a process window for, a modulated wafer |
| US10761128B2 (en) * | 2017-03-23 | 2020-09-01 | Kla-Tencor Corporation | Methods and systems for inline parts average testing and latent reliability defect detection |
| US10262408B2 (en) * | 2017-04-12 | 2019-04-16 | Kla-Tencor Corporation | System, method and computer program product for systematic and stochastic characterization of pattern defects identified from a semiconductor wafer |
| JP6778666B2 (ja) | 2017-08-24 | 2020-11-04 | 株式会社日立製作所 | 探索装置及び探索方法 |
| EP3451061A1 (en) * | 2017-09-04 | 2019-03-06 | ASML Netherlands B.V. | Method for monitoring a manufacturing process |
| US11635698B2 (en) | 2018-01-24 | 2023-04-25 | Asml Netherlands B.V. | Computational metrology based sampling scheme |
| US10867877B2 (en) * | 2018-03-20 | 2020-12-15 | Kla Corporation | Targeted recall of semiconductor devices based on manufacturing data |
| CN111426701B (zh) * | 2019-06-25 | 2024-01-30 | 合肥晶合集成电路股份有限公司 | 一种晶圆缺陷检测方法及其装置 |
| US11494895B2 (en) * | 2020-02-14 | 2022-11-08 | KLA Corp. | Detecting defects in array regions on specimens |
| DE102020104167B4 (de) * | 2020-02-18 | 2023-01-26 | Carl Zeiss Smt Gmbh | Verfahren zur Vermessung von Photomasken |
| WO2021223940A1 (en) * | 2020-05-04 | 2021-11-11 | Asml Netherlands B.V. | System and method for generating level data for a surface of a substrate |
| CN111721779B (zh) * | 2020-05-27 | 2023-02-28 | 联宝(合肥)电子科技有限公司 | 一种产品重工方法、装置及存储介质 |
| US12111355B2 (en) * | 2021-11-22 | 2024-10-08 | Onto Innovation Inc. | Semiconductor substrate yield prediction based on spectra data from multiple substrate dies |
| KR20230118317A (ko) | 2022-02-04 | 2023-08-11 | 삼성전자주식회사 | 선폭 모니터링을 위한 매크로 패턴 구조물을 포함하는 반도체 소자 |
| US12487273B2 (en) * | 2023-02-23 | 2025-12-02 | Applied Materials Israel Ltd. | Optimal determination of an overlay target |
| WO2024220605A1 (en) * | 2023-04-18 | 2024-10-24 | Onto Innovation Inc. | Tracking and/or predicting substrate yield during fabrication |
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| US6215896B1 (en) * | 1995-09-29 | 2001-04-10 | Advanced Micro Devices | System for enabling the real-time detection of focus-related defects |
| JPH09260446A (ja) * | 1996-03-26 | 1997-10-03 | Fujitsu Ltd | 半導体装置の位置ずれ測定方法 |
| JP3757482B2 (ja) * | 1996-08-09 | 2006-03-22 | ソニー株式会社 | 半導体装置の製造方法 |
| JPH11186132A (ja) * | 1997-12-19 | 1999-07-09 | Sony Corp | 半導体装置の製造工程のフィードバック方法 |
| JPH11274037A (ja) * | 1998-03-23 | 1999-10-08 | Hitachi Ltd | 半導体装置の製造方法および装置 |
| US6020957A (en) | 1998-04-30 | 2000-02-01 | Kla-Tencor Corporation | System and method for inspecting semiconductor wafers |
| US6910203B2 (en) * | 2001-12-10 | 2005-06-21 | Toppan Photomasks, Inc. | Photomask and method for qualifying the same with a prototype specification |
| US20040032581A1 (en) | 2002-01-15 | 2004-02-19 | Mehrdad Nikoonahad | Systems and methods for inspection of specimen surfaces |
| JP2003257838A (ja) * | 2002-03-06 | 2003-09-12 | Hitachi Ltd | 露光方法およびそのシステム |
| US6902855B2 (en) | 2002-07-15 | 2005-06-07 | Kla-Tencor Technologies | Qualifying patterns, patterning processes, or patterning apparatus in the fabrication of microlithographic patterns |
| EP1523696B1 (en) | 2002-07-15 | 2016-12-21 | KLA-Tencor Corporation | Defect inspection methods that include acquiring aerial images of a reticle for different lithographic process variables |
| US8185230B2 (en) | 2002-08-22 | 2012-05-22 | Advanced Micro Devices, Inc. | Method and apparatus for predicting device electrical parameters during fabrication |
| US7003758B2 (en) * | 2003-10-07 | 2006-02-21 | Brion Technologies, Inc. | System and method for lithography simulation |
| US7403264B2 (en) * | 2004-07-08 | 2008-07-22 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus |
| US7729529B2 (en) * | 2004-12-07 | 2010-06-01 | Kla-Tencor Technologies Corp. | Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle |
| US7769225B2 (en) * | 2005-08-02 | 2010-08-03 | Kla-Tencor Technologies Corp. | Methods and systems for detecting defects in a reticle design pattern |
| US8238645B2 (en) * | 2005-08-30 | 2012-08-07 | Camtek Ltd. | Inspection system and a method for detecting defects based upon a reference frame |
| JP2007081292A (ja) * | 2005-09-16 | 2007-03-29 | Toshiba Corp | 検査方法、検査システムおよびプログラム |
| US7570796B2 (en) | 2005-11-18 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
| JP4333770B2 (ja) * | 2007-04-12 | 2009-09-16 | ソニー株式会社 | マスクパターン作成プログラム、半導体製造方法、マスクパターン作成方法および半導体設計プログラム |
| JP2008294352A (ja) * | 2007-05-28 | 2008-12-04 | Nuflare Technology Inc | 露光方法及び露光用フォトマスク |
| US20080304025A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| JP4973876B2 (ja) * | 2007-08-22 | 2012-07-11 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるパターン表面コート材 |
| JP5065943B2 (ja) | 2008-02-29 | 2012-11-07 | 株式会社日立ハイテクノロジーズ | 製造プロセスモニタリングシステム |
| DE102008017645A1 (de) | 2008-04-04 | 2009-10-08 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats |
| JP6185693B2 (ja) | 2008-06-11 | 2017-08-23 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の1つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法 |
| JP5268532B2 (ja) | 2008-09-30 | 2013-08-21 | 株式会社日立ハイテクノロジーズ | 試料計測方法、及び計測装置 |
| US8041106B2 (en) * | 2008-12-05 | 2011-10-18 | Kla-Tencor Corp. | Methods and systems for detecting defects on a reticle |
| JP5235719B2 (ja) * | 2009-02-27 | 2013-07-10 | 株式会社日立ハイテクノロジーズ | パターン測定装置 |
| NL2004531A (nl) * | 2009-05-29 | 2010-11-30 | Asml Netherlands Bv | Apparatus and method for providing resist alignment marks in a double patterning lithographic process. |
| JP5719843B2 (ja) * | 2009-07-17 | 2015-05-20 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | 設計データおよび欠陥データを使用したスキャナ性能の比較およびマッチング |
| JP5644290B2 (ja) * | 2010-09-08 | 2014-12-24 | 凸版印刷株式会社 | フォトマスクの製造方法 |
| WO2012062858A1 (en) | 2010-11-12 | 2012-05-18 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system and device manufacturing method |
-
2013
- 2013-03-02 US US13/783,291 patent/US8948495B2/en active Active
- 2013-08-01 KR KR1020207011864A patent/KR102169564B1/ko active Active
- 2013-08-01 JP JP2015525602A patent/JP6282650B2/ja active Active
- 2013-08-01 KR KR1020157005345A patent/KR102129826B1/ko active Active
- 2013-08-01 CN CN201380047045.8A patent/CN104620097B/zh active Active
- 2013-08-01 TW TW102127676A patent/TWI591326B/zh active
- 2013-08-01 WO PCT/US2013/053252 patent/WO2014022682A1/en not_active Ceased
- 2013-08-01 EP EP13825507.0A patent/EP2880427A1/en not_active Withdrawn
-
2015
- 2015-01-28 IL IL236957A patent/IL236957B/en active IP Right Grant
-
2017
- 2017-11-20 IL IL255772A patent/IL255772B/en active IP Right Grant
-
2018
- 2018-01-24 JP JP2018009314A patent/JP2018097376A/ja active Pending
-
2019
- 2019-12-12 JP JP2019224429A patent/JP2020057008A/ja active Pending
-
2021
- 2021-08-16 JP JP2021132300A patent/JP2021182162A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IL255772B (en) | 2020-09-30 |
| KR102129826B1 (ko) | 2020-07-06 |
| EP2880427A1 (en) | 2015-06-10 |
| JP2018097376A (ja) | 2018-06-21 |
| KR102169564B1 (ko) | 2020-10-26 |
| CN104620097A (zh) | 2015-05-13 |
| IL255772A (en) | 2018-01-31 |
| TW201415008A (zh) | 2014-04-16 |
| TWI591326B (zh) | 2017-07-11 |
| JP2021182162A (ja) | 2021-11-25 |
| JP6282650B2 (ja) | 2018-02-21 |
| US20140037187A1 (en) | 2014-02-06 |
| US8948495B2 (en) | 2015-02-03 |
| KR20150036789A (ko) | 2015-04-07 |
| CN104620097B (zh) | 2017-08-29 |
| WO2014022682A1 (en) | 2014-02-06 |
| KR20200045577A (ko) | 2020-05-04 |
| JP2015527740A (ja) | 2015-09-17 |
| JP2020057008A (ja) | 2020-04-09 |
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Legal Events
| Date | Code | Title | Description |
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| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed |