TWI591326B - 檢查一晶圓及／或預測形成於一晶圓上之一裝置之一或多個特徵 - Google Patents

檢查一晶圓及／或預測形成於一晶圓上之一裝置之一或多個特徵 Download PDF

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Publication number
TWI591326B
TWI591326B TW102127676A TW102127676A TWI591326B TW I591326 B TWI591326 B TW I591326B TW 102127676 A TW102127676 A TW 102127676A TW 102127676 A TW102127676 A TW 102127676A TW I591326 B TWI591326 B TW I591326B
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TW
Taiwan
Prior art keywords
dies
defects
error
focus
wafer
Prior art date
Application number
TW102127676A
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English (en)
Chinese (zh)
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TW201415008A (zh
Inventor
吉諾 馬庫西里
艾米爾 威德曼
艾莉絲 張
約翰 羅賓森
艾倫 派克
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克萊譚克公司
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Publication of TW201415008A publication Critical patent/TW201415008A/zh
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Publication of TWI591326B publication Critical patent/TWI591326B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Manufacturing & Machinery (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW102127676A 2012-08-01 2013-08-01 檢查一晶圓及／或預測形成於一晶圓上之一裝置之一或多個特徵 TWI591326B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261678576P 2012-08-01 2012-08-01
US13/783,291 US8948495B2 (en) 2012-08-01 2013-03-02 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer

Publications (2)

Publication Number Publication Date
TW201415008A TW201415008A (zh) 2014-04-16
TWI591326B true TWI591326B (zh) 2017-07-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102127676A TWI591326B (zh) 2012-08-01 2013-08-01 檢查一晶圓及／或預測形成於一晶圓上之一裝置之一或多個特徵

Country Status (8)

Country Link
US (1) US8948495B2 (enExample)
EP (1) EP2880427A1 (enExample)
JP (4) JP6282650B2 (enExample)
KR (2) KR102169564B1 (enExample)
CN (1) CN104620097B (enExample)
IL (2) IL236957B (enExample)
TW (1) TWI591326B (enExample)
WO (1) WO2014022682A1 (enExample)

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Also Published As

Publication number Publication date
IL255772B (en) 2020-09-30
KR102129826B1 (ko) 2020-07-06
EP2880427A1 (en) 2015-06-10
IL236957B (en) 2018-07-31
JP2018097376A (ja) 2018-06-21
KR102169564B1 (ko) 2020-10-26
CN104620097A (zh) 2015-05-13
IL255772A (en) 2018-01-31
TW201415008A (zh) 2014-04-16
JP2021182162A (ja) 2021-11-25
JP6282650B2 (ja) 2018-02-21
US20140037187A1 (en) 2014-02-06
US8948495B2 (en) 2015-02-03
KR20150036789A (ko) 2015-04-07
CN104620097B (zh) 2017-08-29
WO2014022682A1 (en) 2014-02-06
KR20200045577A (ko) 2020-05-04
JP2015527740A (ja) 2015-09-17
JP2020057008A (ja) 2020-04-09

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