KR102169564B1 - 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법 - Google Patents

웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법 Download PDF

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KR102169564B1
KR102169564B1 KR1020207011864A KR20207011864A KR102169564B1 KR 102169564 B1 KR102169564 B1 KR 102169564B1 KR 1020207011864 A KR1020207011864 A KR 1020207011864A KR 20207011864 A KR20207011864 A KR 20207011864A KR 102169564 B1 KR102169564 B1 KR 102169564B1
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features
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KR20200045577A (ko
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지노 마쿠치리
아미르 위드만
엘리스 창
존 로빈슨
알렌 박
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020207011864A 2012-08-01 2013-08-01 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법 Active KR102169564B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261678576P 2012-08-01 2012-08-01
US61/678,576 2012-08-01
US13/783,291 2013-03-02
US13/783,291 US8948495B2 (en) 2012-08-01 2013-03-02 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
PCT/US2013/053252 WO2014022682A1 (en) 2012-08-01 2013-08-01 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer

Related Parent Applications (1)

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KR1020157005345A Division KR102129826B1 (ko) 2012-08-01 2013-08-01 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법

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KR20200045577A KR20200045577A (ko) 2020-05-04
KR102169564B1 true KR102169564B1 (ko) 2020-10-26

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KR1020157005345A Active KR102129826B1 (ko) 2012-08-01 2013-08-01 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법

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US (1) US8948495B2 (enExample)
EP (1) EP2880427A1 (enExample)
JP (4) JP6282650B2 (enExample)
KR (2) KR102169564B1 (enExample)
CN (1) CN104620097B (enExample)
IL (2) IL236957B (enExample)
TW (1) TWI591326B (enExample)
WO (1) WO2014022682A1 (enExample)

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Also Published As

Publication number Publication date
IL255772B (en) 2020-09-30
KR102129826B1 (ko) 2020-07-06
WO2014022682A1 (en) 2014-02-06
TW201415008A (zh) 2014-04-16
JP6282650B2 (ja) 2018-02-21
JP2018097376A (ja) 2018-06-21
CN104620097A (zh) 2015-05-13
TWI591326B (zh) 2017-07-11
IL255772A (en) 2018-01-31
EP2880427A1 (en) 2015-06-10
CN104620097B (zh) 2017-08-29
US20140037187A1 (en) 2014-02-06
JP2020057008A (ja) 2020-04-09
IL236957B (en) 2018-07-31
JP2021182162A (ja) 2021-11-25
US8948495B2 (en) 2015-02-03
JP2015527740A (ja) 2015-09-17
KR20200045577A (ko) 2020-05-04
KR20150036789A (ko) 2015-04-07

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