JP6282650B2 - ウェーハの検査、及び／又はウェーハ上に形成されるデバイスの一つ若しくは複数の特性の予測 - Google Patents

ウェーハの検査、及び／又はウェーハ上に形成されるデバイスの一つ若しくは複数の特性の予測 Download PDF

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JP6282650B2
JP6282650B2 JP2015525602A JP2015525602A JP6282650B2 JP 6282650 B2 JP6282650 B2 JP 6282650B2 JP 2015525602 A JP2015525602 A JP 2015525602A JP 2015525602 A JP2015525602 A JP 2015525602A JP 6282650 B2 JP6282650 B2 JP 6282650B2
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dies
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wafer
defects
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JP2015527740A5 (enExample
JP2015527740A (ja
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ジーノ マークッキリ
ジーノ マークッキリ
アミル ウィドマン
アミル ウィドマン
エリス チャン
エリス チャン
ジョン ロビンソン
ジョン ロビンソン
アレン パーク
アレン パーク
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KLA Corp
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Manufacturing & Machinery (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2015525602A 2012-08-01 2013-08-01 ウェーハの検査、及び／又はウェーハ上に形成されるデバイスの一つ若しくは複数の特性の予測 Active JP6282650B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261678576P 2012-08-01 2012-08-01
US61/678,576 2012-08-01
US13/783,291 2013-03-02
US13/783,291 US8948495B2 (en) 2012-08-01 2013-03-02 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
PCT/US2013/053252 WO2014022682A1 (en) 2012-08-01 2013-08-01 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer

Related Child Applications (1)

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JP2018009314A Division JP2018097376A (ja) 2012-08-01 2018-01-24 ウェーハの検査、及び／又はウェーハ上に形成されるデバイスの一つ若しくは複数の特性の予測

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JP2015527740A JP2015527740A (ja) 2015-09-17
JP2015527740A5 JP2015527740A5 (enExample) 2016-09-15
JP6282650B2 true JP6282650B2 (ja) 2018-02-21

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JP2015525602A Active JP6282650B2 (ja) 2012-08-01 2013-08-01 ウェーハの検査、及び／又はウェーハ上に形成されるデバイスの一つ若しくは複数の特性の予測
JP2018009314A Pending JP2018097376A (ja) 2012-08-01 2018-01-24 ウェーハの検査、及び／又はウェーハ上に形成されるデバイスの一つ若しくは複数の特性の予測
JP2019224429A Pending JP2020057008A (ja) 2012-08-01 2019-12-12 デバイスの特性の予測方法及びシステム
JP2021132300A Pending JP2021182162A (ja) 2012-08-01 2021-08-16 デバイスの特性の予測方法及びシステム

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JP2019224429A Pending JP2020057008A (ja) 2012-08-01 2019-12-12 デバイスの特性の予測方法及びシステム
JP2021132300A Pending JP2021182162A (ja) 2012-08-01 2021-08-16 デバイスの特性の予測方法及びシステム

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US (1) US8948495B2 (enExample)
EP (1) EP2880427A1 (enExample)
JP (4) JP6282650B2 (enExample)
KR (2) KR102169564B1 (enExample)
CN (1) CN104620097B (enExample)
IL (2) IL236957B (enExample)
TW (1) TWI591326B (enExample)
WO (1) WO2014022682A1 (enExample)

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Also Published As

Publication number Publication date
IL255772B (en) 2020-09-30
KR102129826B1 (ko) 2020-07-06
WO2014022682A1 (en) 2014-02-06
TW201415008A (zh) 2014-04-16
JP2018097376A (ja) 2018-06-21
CN104620097A (zh) 2015-05-13
TWI591326B (zh) 2017-07-11
KR102169564B1 (ko) 2020-10-26
IL255772A (en) 2018-01-31
EP2880427A1 (en) 2015-06-10
CN104620097B (zh) 2017-08-29
US20140037187A1 (en) 2014-02-06
JP2020057008A (ja) 2020-04-09
IL236957B (en) 2018-07-31
JP2021182162A (ja) 2021-11-25
US8948495B2 (en) 2015-02-03
JP2015527740A (ja) 2015-09-17
KR20200045577A (ko) 2020-05-04
KR20150036789A (ko) 2015-04-07

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