IL178684A - An electrode and a method for controlling plasma engraving using an electrode - Google Patents

An electrode and a method for controlling plasma engraving using an electrode

Info

Publication number
IL178684A
IL178684A IL178684A IL17868406A IL178684A IL 178684 A IL178684 A IL 178684A IL 178684 A IL178684 A IL 178684A IL 17868406 A IL17868406 A IL 17868406A IL 178684 A IL178684 A IL 178684A
Authority
IL
Israel
Prior art keywords
electrode
plasma etching
controlling plasma
controlling
etching
Prior art date
Application number
IL178684A
Other languages
English (en)
Hebrew (he)
Other versions
IL178684A0 (en
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of IL178684A0 publication Critical patent/IL178684A0/en
Publication of IL178684A publication Critical patent/IL178684A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/36—Tubes with flat electrodes, e.g. disc electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
IL178684A 2004-04-30 2006-10-17 An electrode and a method for controlling plasma engraving using an electrode IL178684A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/835,456 US8317968B2 (en) 2004-04-30 2004-04-30 Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
PCT/US2005/012210 WO2005111267A2 (en) 2004-04-30 2005-04-11 Gas distribution member supplying process gas and rf power for plasma processing

Publications (2)

Publication Number Publication Date
IL178684A0 IL178684A0 (en) 2007-02-11
IL178684A true IL178684A (en) 2014-02-27

Family

ID=35185883

Family Applications (1)

Application Number Title Priority Date Filing Date
IL178684A IL178684A (en) 2004-04-30 2006-10-17 An electrode and a method for controlling plasma engraving using an electrode

Country Status (8)

Country Link
US (2) US8317968B2 (enExample)
EP (1) EP1769101A4 (enExample)
JP (1) JP4980890B2 (enExample)
KR (1) KR101280184B1 (enExample)
CN (1) CN101018884B (enExample)
IL (1) IL178684A (enExample)
TW (1) TWI406599B (enExample)
WO (1) WO2005111267A2 (enExample)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8317968B2 (en) 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
CN102154628B (zh) * 2004-08-02 2014-05-07 维高仪器股份有限公司 用于化学气相沉积反应器的多气体分配喷射器
US20070071583A1 (en) * 2005-09-29 2007-03-29 Stats Chippac Ltd. Substrate indexing system
US7662723B2 (en) * 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
KR100901122B1 (ko) * 2006-12-28 2009-06-08 주식회사 케이씨텍 기판 표면처리장치 및 그 방법
US8375890B2 (en) 2007-03-19 2013-02-19 Micron Technology, Inc. Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
US7862682B2 (en) * 2007-06-13 2011-01-04 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
JP4900956B2 (ja) * 2007-06-25 2012-03-21 東京エレクトロン株式会社 ガス供給機構及び基板処理装置
WO2009042137A2 (en) * 2007-09-25 2009-04-02 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US8152954B2 (en) * 2007-10-12 2012-04-10 Lam Research Corporation Showerhead electrode assemblies and plasma processing chambers incorporating the same
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
CN101903979B (zh) * 2007-12-19 2012-02-01 朗姆研究公司 组合喷淋头电极总成、连接其各部件的方法及衬底处理方法
JP5567494B2 (ja) 2007-12-19 2014-08-06 ラム リサーチ コーポレーション 半導体真空処理装置用のコンポーネント・アセンブリ、アセンブリを結合する方法、及び、半導体基板を処理する方法
JP5029382B2 (ja) * 2008-01-22 2012-09-19 東京エレクトロン株式会社 処理装置及び処理方法
JP5224855B2 (ja) * 2008-03-05 2013-07-03 東京エレクトロン株式会社 電極ユニット、基板処理装置及び電極ユニットの温度制御方法
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
FR2930561B1 (fr) * 2008-04-28 2011-01-14 Altatech Semiconductor Dispositif et procede de traitement chimique en phase vapeur.
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US8449679B2 (en) 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US9155134B2 (en) 2008-10-17 2015-10-06 Applied Materials, Inc. Methods and apparatus for rapidly responsive heat control in plasma processing devices
JP5445252B2 (ja) * 2010-03-16 2014-03-19 東京エレクトロン株式会社 成膜装置
US8270172B2 (en) * 2010-04-23 2012-09-18 GE Intelligent Platforms Embedded Systems, Inc. Wedge lock for use with a single board computer, a single board computer, and method of assembling a computer system
US10595365B2 (en) * 2010-10-19 2020-03-17 Applied Materials, Inc. Chamber lid heater ring assembly
JP5709505B2 (ja) * 2010-12-15 2015-04-30 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、および記憶媒体
US8733280B2 (en) * 2010-12-20 2014-05-27 Intermolecular, Inc. Showerhead for processing chamber
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
KR101295794B1 (ko) * 2011-05-31 2013-08-09 세메스 주식회사 기판 처리 장치
US9245717B2 (en) * 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
TW201325326A (zh) * 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US9396908B2 (en) * 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
CN104024477B (zh) * 2011-11-23 2016-05-18 朗姆研究公司 多区域气体注入上电极系统
US9267205B1 (en) * 2012-05-30 2016-02-23 Alta Devices, Inc. Fastener system for supporting a liner plate in a gas showerhead reactor
CN103077877A (zh) * 2012-08-03 2013-05-01 光达光电设备科技（嘉兴）有限公司 化学气相沉积设备及其顶板表面温度检测方法
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
CN103730315B (zh) * 2012-10-11 2016-03-09 中微半导体设备(上海)有限公司 一种改善等离子体刻蚀工艺的方法
CN103811296B (zh) * 2012-11-14 2018-01-09 中微半导体设备(上海)有限公司 关键尺寸控制系统
US20140144380A1 (en) * 2012-11-28 2014-05-29 Samsung Electronics Co., Ltd. Gas supply pipes and chemical vapor deposition apparatus
US8883029B2 (en) * 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
CN104167345B (zh) * 2013-05-17 2016-08-24 中微半导体设备(上海)有限公司 等离子处理装置及其气体输送装置、气体切换方法
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
KR20150046966A (ko) * 2013-10-23 2015-05-04 삼성디스플레이 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
CN103757605B (zh) * 2014-01-27 2016-06-29 张福昌 一种化学气相沉积设备
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
JP6541374B2 (ja) * 2014-07-24 2019-07-10 東京エレクトロン株式会社 基板処理装置
US10096495B2 (en) 2014-12-26 2018-10-09 Tokyo Electron Limited Substrate processing apparatus
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US10253412B2 (en) 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
KR20170008917A (ko) * 2015-07-14 2017-01-25 주식회사 테라리더 대면적 vo2 산화물 반도체 박막성장형 pid 제어 스퍼터링 시스템
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
CN107492509B (zh) * 2016-06-13 2019-08-23 北京北方华创微电子装备有限公司 一种晶圆去气腔室及pvd设备
KR102251209B1 (ko) * 2016-06-15 2021-05-11 어플라이드 머티어리얼스, 인코포레이티드 고 전력 플라즈마 에칭 프로세스들을 위한 가스 분배 플레이트 조립체
KR102587615B1 (ko) * 2016-12-21 2023-10-11 삼성전자주식회사 플라즈마 처리 장치의 온도 조절기 및 이를 포함하는 플라즈마 처리 장치
FR3061914B1 (fr) * 2017-01-16 2019-05-31 Kobus Sas Chambre de traitement pour un reacteur de depot chimique en phase vapeur (cvd) et procede de thermalisation mis en œuvre dans cette chambre
CN108335978B (zh) * 2017-01-20 2022-08-26 东京毅力科创株式会社 等离子体处理装置
KR101912886B1 (ko) * 2017-03-07 2018-10-29 에이피시스템 주식회사 가스 분사 장치, 이를 포함하는 기판 처리 설비 및 이를 이용한 기판 처리 방법
TWI649446B (zh) * 2017-03-15 2019-02-01 漢民科技股份有限公司 應用於半導體設備之可拆卸式噴氣裝置
US20190088451A1 (en) * 2017-05-12 2019-03-21 Ontos Equipment Systems, Inc. Integrated Thermal Management for Surface Treatment with Atmospheric Plasma
KR102366987B1 (ko) * 2017-12-20 2022-02-25 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 방법
US11434568B2 (en) * 2018-04-17 2022-09-06 Applied Materials, Inc. Heated ceramic faceplate
WO2019212059A1 (ja) * 2018-05-02 2019-11-07 東京エレクトロン株式会社 上部電極およびプラズマ処理装置
RU2718132C1 (ru) * 2019-06-10 2020-03-30 Акционерное общество "Научно-производственное предприятие "Электронное специальное-технологическое оборудование" Устройство плазменной обработки полупроводниковых структур
RU2714864C1 (ru) * 2019-06-10 2020-02-19 Акционерное общество "Научно-производственное предприятие "Электронное специальное-технологическое оборудование" Реактор плазменной обработки полупроводниковых структур
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
JP2022546404A (ja) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション 金属の堆積
WO2021091948A1 (en) * 2019-11-08 2021-05-14 Applied Materials, Inc. Chamber components for gas delivery modulation
KR102770382B1 (ko) 2019-12-05 2025-02-18 어플라이드 머티어리얼스, 인코포레이티드 증착 챔버를 위한 가스 분배 세라믹 가열기
CN111455350A (zh) * 2020-04-07 2020-07-28 沈阳拓荆科技有限公司 射频从喷淋板导入的喷淋板装置
CN113804046B (zh) * 2020-06-15 2023-10-13 拓荆科技股份有限公司 一种低成本的主动控温喷淋头
RU2753823C1 (ru) * 2020-12-21 2021-08-23 Открытое акционерное общество "Научно-исследовательский институт точного машиностроения" Реактор для плазмохимической обработки полупроводниковых структур
KR20220095677A (ko) * 2020-12-30 2022-07-07 세메스 주식회사 온도 측정 유닛을 포함하는 공정 챔버 및 온도 측정 유닛을 포함하는 기판 처리 장치
CN112593215B (zh) * 2021-03-04 2021-07-13 苏州迈正科技有限公司 阴极模组及真空镀膜装置
JP7560214B2 (ja) * 2021-03-11 2024-10-02 東京エレクトロン株式会社 着火方法及びプラズマ処理装置
US12074010B2 (en) * 2021-09-09 2024-08-27 Applied Materials, Inc. Atomic layer deposition part coating chamber
KR102726133B1 (ko) * 2021-12-16 2024-11-05 주식회사 테스 샤워헤드 어셈블리
KR102441994B1 (ko) * 2021-12-27 2022-09-08 주식회사 에이치피에스피 고속 냉각 고압 챔버
TWI816362B (zh) * 2022-04-14 2023-09-21 相弘科技股份有限公司 多管氣體流量檢測裝置與方法
WO2025128266A1 (en) * 2023-12-15 2025-06-19 Lam Research Corporation Fractal showerhead for flow uniformity

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963423A (en) 1987-10-08 1990-10-16 Anelva Corporation Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
JPH02268429A (ja) * 1989-04-11 1990-11-02 Tokyo Electron Ltd プラズマエッチング装置
JP3124599B2 (ja) * 1991-12-16 2001-01-15 東京エレクトロン株式会社 エッチング方法
EP1120817B8 (en) 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
JP3115640B2 (ja) * 1991-05-27 2000-12-11 株式会社プラズマシステム プラズマ処理装置およびそれに用いる電極の構造
US5613505A (en) 1992-09-11 1997-03-25 Philip Morris Incorporated Inductive heating systems for smoking articles
JP3146112B2 (ja) 1993-12-24 2001-03-12 シャープ株式会社 プラズマｃｖｄ装置
JPH07335635A (ja) * 1994-06-10 1995-12-22 Souzou Kagaku:Kk 平行平板形ドライエッチング装置
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US20050236109A1 (en) * 1995-03-16 2005-10-27 Toshio Masuda Plasma etching apparatus and plasma etching method
US5641735A (en) * 1995-06-06 1997-06-24 Chevron Chemical Company Bis(thio)ethylene ashless wear inhibitors and lubricating oils
US5534751A (en) 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
US5882411A (en) 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
AU7291398A (en) 1997-05-06 1998-11-27 Thermoceramix, L.L.C. Deposited resistive coatings
KR100434790B1 (ko) * 1997-05-20 2004-06-07 동경 엘렉트론 주식회사 처리 장치
JP3314151B2 (ja) * 1998-01-05 2002-08-12 株式会社日立国際電気 プラズマｃｖｄ装置及び半導体装置の製造方法
US5997649A (en) 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6073577A (en) 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6335292B1 (en) 1999-04-15 2002-01-01 Micron Technology, Inc. Method of controlling striations and CD loss in contact oxide etch
KR100302609B1 (ko) 1999-05-10 2001-09-13 김영환 온도가변 가스 분사 장치
JP2001068538A (ja) 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
JP2001053058A (ja) * 1999-08-05 2001-02-23 Mitsubishi Electric Corp 半導体製造装置
US6391781B1 (en) 2000-01-06 2002-05-21 Oki Electric Industry Co., Ltd. Method of making a semiconductor device
US6432318B1 (en) 2000-02-17 2002-08-13 Applied Materials, Inc. Dielectric etch process reducing striations and maintaining critical dimensions
US6853141B2 (en) * 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
JP4602528B2 (ja) * 2000-09-26 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
US6333272B1 (en) 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
WO2002033729A2 (en) * 2000-10-16 2002-04-25 Tokyo Electron Limited Plasma reactor with reduced reaction chamber
AU2002212963A1 (en) 2000-10-25 2002-05-06 Tokyo Electron Limited Method of and structure for controlling electrode temperature
EP1361604B1 (en) 2001-01-22 2009-03-18 Tokyo Electron Limited Device and method for treatment
JP3924483B2 (ja) * 2001-03-19 2007-06-06 アイピーエス リミテッド 化学気相蒸着装置
US20020142610A1 (en) * 2001-03-30 2002-10-03 Ting Chien Plasma etching of dielectric layer with selectivity to stop layer
US6818096B2 (en) * 2001-04-12 2004-11-16 Michael Barnes Plasma reactor electrode
US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6746961B2 (en) 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US20030047282A1 (en) 2001-09-10 2003-03-13 Yasumi Sago Surface processing apparatus
JP4121269B2 (ja) 2001-11-27 2008-07-23 日本エー・エス・エム株式会社 セルフクリーニングを実行するプラズマｃｖｄ装置及び方法
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
JP2003282462A (ja) * 2002-03-27 2003-10-03 Kyocera Corp シャワープレートとその製造方法及びそれを用いたシャワーヘッド
US7543547B1 (en) 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
US7405521B2 (en) 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US8317968B2 (en) 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing

Also Published As

Publication number Publication date
CN101018884B (zh) 2011-06-08
WO2005111267A2 (en) 2005-11-24
JP2007535816A (ja) 2007-12-06
JP4980890B2 (ja) 2012-07-18
KR20070016142A (ko) 2007-02-07
WO2005111267A3 (en) 2007-03-29
KR101280184B1 (ko) 2013-07-01
IL178684A0 (en) 2007-02-11
EP1769101A4 (en) 2010-03-03
US8822345B2 (en) 2014-09-02
TW200541414A (en) 2005-12-16
US20130065396A1 (en) 2013-03-14
CN101018884A (zh) 2007-08-15
US20050241766A1 (en) 2005-11-03
TWI406599B (zh) 2013-08-21
EP1769101A2 (en) 2007-04-04
US8317968B2 (en) 2012-11-27

Similar Documents

Publication Publication Date Title
IL178684A (en) An electrode and a method for controlling plasma engraving using an electrode
AU2003236309A8 (en) Plasma etching method
TWI372426B (en) Method and apparatus for photomask plasma etching
IL190716A0 (en) A method for plasma etching
AU2003236307A8 (en) Plasma etching method and plasma etching device
AU2003282718A8 (en) A method for plasma etching performance enhancement
GB0413554D0 (en) Improved method and apparartus for the etching of microstructures
ZA200701065B (en) Blasting system and method of controlling a blasting operation
SG121046A1 (en) Method of selective etching using etch stop layer
AU2003213572A1 (en) Contact start plasma arc torch and method of initiating a pilot arc
ZA200704807B (en) Session controller and method of operating a session controller
ZA200703557B (en) Method for treatment of a gas
AU2003284404A1 (en) Method of plasma doping
SG115762A1 (en) Battery apparatus and discharge controlling method of battery apparatus
AU2003243506A1 (en) Electrolytic etching of metal layers
AU2003266517A1 (en) Member for plasma etching device and method for manufacture thereof
AU2002359950A1 (en) Plasma treatment method
AU2003223472A8 (en) Plasma etching of cu-containing layers
GB2418437B (en) A rib-frame structure and method of manufacturing it
AU2003227223A1 (en) Method of etching
PL3001906T3 (pl) Sposób zapobiegania lub zwalczania zakażenia grzybami
EP1782461A4 (en) SYSTEM AND METHOD FOR CLEANING AND CUTTING A SUBSTRATE
GB0401622D0 (en) Plasma etching process
AU2003234137A1 (en) Method of forming a reference voltage and structure therefor
AU2003222570A1 (en) Means of powering and controlling a plasma panel using transformers

Legal Events

Date Code Title Description
FF Patent granted
MM9K Patent not in force due to non-payment of renewal fees