JP4980890B2 - シャワーヘッド電極アセンブリ、真空室及びプラズマエッチングの制御方法 - Google Patents

シャワーヘッド電極アセンブリ、真空室及びプラズマエッチングの制御方法 Download PDF

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Publication number
JP4980890B2
JP4980890B2 JP2007510763A JP2007510763A JP4980890B2 JP 4980890 B2 JP4980890 B2 JP 4980890B2 JP 2007510763 A JP2007510763 A JP 2007510763A JP 2007510763 A JP2007510763 A JP 2007510763A JP 4980890 B2 JP4980890 B2 JP 4980890B2
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showerhead electrode
gas
temperature
heater
distribution member
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Expired - Lifetime
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Japanese (ja)
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JP2007535816A5 (enExample
JP2007535816A (ja
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ラジンダー ディンサ，
エリック レンツ，
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/36—Tubes with flat electrodes, e.g. disc electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2007510763A 2004-04-30 2005-04-11 シャワーヘッド電極アセンブリ、真空室及びプラズマエッチングの制御方法 Expired - Lifetime JP4980890B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/835,456 US8317968B2 (en) 2004-04-30 2004-04-30 Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US10/835,456 2004-04-30
PCT/US2005/012210 WO2005111267A2 (en) 2004-04-30 2005-04-11 Gas distribution member supplying process gas and rf power for plasma processing

Publications (3)

Publication Number Publication Date
JP2007535816A JP2007535816A (ja) 2007-12-06
JP2007535816A5 JP2007535816A5 (enExample) 2008-05-29
JP4980890B2 true JP4980890B2 (ja) 2012-07-18

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JP2007510763A Expired - Lifetime JP4980890B2 (ja) 2004-04-30 2005-04-11 シャワーヘッド電極アセンブリ、真空室及びプラズマエッチングの制御方法

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Country Link
US (2) US8317968B2 (enExample)
EP (1) EP1769101A4 (enExample)
JP (1) JP4980890B2 (enExample)
KR (1) KR101280184B1 (enExample)
CN (1) CN101018884B (enExample)
IL (1) IL178684A (enExample)
TW (1) TWI406599B (enExample)
WO (1) WO2005111267A2 (enExample)

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KR20070016142A (ko) 2007-02-07
US20130065396A1 (en) 2013-03-14
US20050241766A1 (en) 2005-11-03
CN101018884A (zh) 2007-08-15
US8822345B2 (en) 2014-09-02
EP1769101A2 (en) 2007-04-04
TWI406599B (zh) 2013-08-21
WO2005111267A2 (en) 2005-11-24
TW200541414A (en) 2005-12-16
IL178684A (en) 2014-02-27
JP2007535816A (ja) 2007-12-06
EP1769101A4 (en) 2010-03-03
US8317968B2 (en) 2012-11-27
WO2005111267A3 (en) 2007-03-29
IL178684A0 (en) 2007-02-11
CN101018884B (zh) 2011-06-08
KR101280184B1 (ko) 2013-07-01

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