EP1782461A4 - System and method of cleaning and etching a substrate - Google Patents

System and method of cleaning and etching a substrate

Info

Publication number
EP1782461A4
EP1782461A4 EP05762857A EP05762857A EP1782461A4 EP 1782461 A4 EP1782461 A4 EP 1782461A4 EP 05762857 A EP05762857 A EP 05762857A EP 05762857 A EP05762857 A EP 05762857A EP 1782461 A4 EP1782461 A4 EP 1782461A4
Authority
EP
European Patent Office
Prior art keywords
etching
cleaning
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05762857A
Other languages
German (de)
French (fr)
Other versions
EP1782461A2 (en
Inventor
Mikhail Korolik
John M Boyd
Katrina Mikhaylich
Michael Ravkin
Fred C Redeker
Larios John M De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of EP1782461A2 publication Critical patent/EP1782461A2/en
Publication of EP1782461A4 publication Critical patent/EP1782461A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
EP05762857A 2004-06-28 2005-06-23 System and method of cleaning and etching a substrate Withdrawn EP1782461A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88000704A 2004-06-28 2004-06-28
PCT/US2005/022172 WO2006012174A2 (en) 2004-06-28 2005-06-23 System and method of cleaning and etching a substrate

Publications (2)

Publication Number Publication Date
EP1782461A2 EP1782461A2 (en) 2007-05-09
EP1782461A4 true EP1782461A4 (en) 2008-05-28

Family

ID=35786645

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05762857A Withdrawn EP1782461A4 (en) 2004-06-28 2005-06-23 System and method of cleaning and etching a substrate

Country Status (6)

Country Link
EP (1) EP1782461A4 (en)
JP (1) JP2008504714A (en)
KR (1) KR20070026687A (en)
CN (1) CN101006571A (en)
TW (1) TWI271793B (en)
WO (1) WO2006012174A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010236088A (en) * 2009-03-09 2010-10-21 Hitachi High-Technologies Corp Cleaning device and cleaning method of mask member and organic el display
US20130068264A1 (en) * 2011-09-21 2013-03-21 Nanya Technology Corporation Wafer scrubber apparatus
KR101992422B1 (en) * 2012-08-14 2019-06-24 주식회사 동진쎄미켐 Apparatus and method for polishing metal layer using photolysis advanced oxidation process
US10347503B2 (en) * 2013-11-11 2019-07-09 Tokyo Electron Limited Method and hardware for enhanced removal of post etch polymer and hardmask removal
TWI570806B (en) 2013-11-11 2017-02-11 東京威力科創股份有限公司 System and method for enhanced removal of metal hardmask using ultra violet treatment
US10867815B2 (en) 2018-09-04 2020-12-15 Tokyo Electron Limited Photonically tuned etchant reactivity for wet etching
US10896824B2 (en) * 2018-12-14 2021-01-19 Tokyo Electron Limited Roughness reduction methods for materials using illuminated etch solutions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6533902B1 (en) * 1999-08-12 2003-03-18 Sipec Corporation Ultraviolet processing apparatus and ultraviolet processing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512123A (en) * 1992-05-19 1996-04-30 Maxwell Laboratories Method for using pulsed optical energy to increase the bondability of a surface
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US6631726B1 (en) * 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate
JP3961240B2 (en) * 2001-06-28 2007-08-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6533902B1 (en) * 1999-08-12 2003-03-18 Sipec Corporation Ultraviolet processing apparatus and ultraviolet processing method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 2003, SASAKI D ET AL: "Photo-chemical pattern etching of silicon-carbide by using excimer laser and hydrogen peroxide solution", XP002476854, Database accession no. 7839009 *
SILICON CARBIDE 2002 - MATERIALS, PROCESSING AND DEVICES. SYMPOSIUM 2-4 DEC. 2002 BOSTON, MA, USA, 2003, Silicon Carbide 2002 - Materials, Processing and Devices. Symposium (Mater. Res. Soc. Symposium Proceedings Vol.742) Mater. Res. Soc Warrendale, PA, USA, pages 271 - 276 *

Also Published As

Publication number Publication date
EP1782461A2 (en) 2007-05-09
TWI271793B (en) 2007-01-21
JP2008504714A (en) 2008-02-14
WO2006012174A2 (en) 2006-02-02
TW200608478A (en) 2006-03-01
CN101006571A (en) 2007-07-25
KR20070026687A (en) 2007-03-08
WO2006012174A3 (en) 2006-09-14

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20070108

AK Designated contracting states

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

RIC1 Information provided on ipc code assigned before grant

Ipc: B08B 7/04 20060101ALI20070607BHEP

Ipc: H01L 27/01 20060101ALI20070607BHEP

Ipc: C23C 14/00 20060101ALI20070607BHEP

Ipc: H01L 21/461 20060101AFI20070607BHEP

DAX Request for extension of the european patent (deleted)
RIN1 Information on inventor provided before grant (corrected)

Inventor name: BOYD, JOHN M.

Inventor name: RAVKIN, MICHAEL

Inventor name: KOROLIK, MIKHAIL

Inventor name: MIKHAYLICH, KATRINA

Inventor name: DE LARIOS, JOHN, M.

Inventor name: REDEKER, FRED, C.

A4 Supplementary search report drawn up and despatched

Effective date: 20080429

17Q First examination report despatched

Effective date: 20080805

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20081216