WO2006012174A3 - System and method of cleaning and etching a substrate - Google Patents

System and method of cleaning and etching a substrate Download PDF

Info

Publication number
WO2006012174A3
WO2006012174A3 PCT/US2005/022172 US2005022172W WO2006012174A3 WO 2006012174 A3 WO2006012174 A3 WO 2006012174A3 US 2005022172 W US2005022172 W US 2005022172W WO 2006012174 A3 WO2006012174 A3 WO 2006012174A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
etching
cleaning
solution
reacted
Prior art date
Application number
PCT/US2005/022172
Other languages
French (fr)
Other versions
WO2006012174A2 (en
Inventor
Mikhail Korolik
John M Boyd
Katrina Mikhaylich
Michael Ravkin
Fred C Redeker
Larios John M De
Original Assignee
Lam Res Corp
Mikhail Korolik
John M Boyd
Katrina Mikhaylich
Michael Ravkin
Fred C Redeker
Larios John M De
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Mikhail Korolik, John M Boyd, Katrina Mikhaylich, Michael Ravkin, Fred C Redeker, Larios John M De filed Critical Lam Res Corp
Priority to EP05762857A priority Critical patent/EP1782461A4/en
Priority to JP2007519288A priority patent/JP2008504714A/en
Publication of WO2006012174A2 publication Critical patent/WO2006012174A2/en
Publication of WO2006012174A3 publication Critical patent/WO2006012174A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

One embodiment provides a method of processing a substrate. The method includes applying a solution to a surface of a substrate. At least one reacting species has been produced by dissociation of the solution by applying energy such as a light to the solution. A first material on the substrate is reacted and removing the reacted first material. A system for processing a substrate is also described.
PCT/US2005/022172 2004-06-28 2005-06-23 System and method of cleaning and etching a substrate WO2006012174A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05762857A EP1782461A4 (en) 2004-06-28 2005-06-23 System and method of cleaning and etching a substrate
JP2007519288A JP2008504714A (en) 2004-06-28 2005-06-23 System and method for cleaning and etching a substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88000704A 2004-06-28 2004-06-28
US10/880,007 2004-06-28

Publications (2)

Publication Number Publication Date
WO2006012174A2 WO2006012174A2 (en) 2006-02-02
WO2006012174A3 true WO2006012174A3 (en) 2006-09-14

Family

ID=35786645

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/022172 WO2006012174A2 (en) 2004-06-28 2005-06-23 System and method of cleaning and etching a substrate

Country Status (6)

Country Link
EP (1) EP1782461A4 (en)
JP (1) JP2008504714A (en)
KR (1) KR20070026687A (en)
CN (1) CN101006571A (en)
TW (1) TWI271793B (en)
WO (1) WO2006012174A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010236088A (en) * 2009-03-09 2010-10-21 Hitachi High-Technologies Corp Cleaning device and cleaning method of mask member and organic el display
US20130068264A1 (en) * 2011-09-21 2013-03-21 Nanya Technology Corporation Wafer scrubber apparatus
KR101992422B1 (en) * 2012-08-14 2019-06-24 주식회사 동진쎄미켐 Apparatus and method for polishing metal layer using photolysis advanced oxidation process
US10347503B2 (en) * 2013-11-11 2019-07-09 Tokyo Electron Limited Method and hardware for enhanced removal of post etch polymer and hardmask removal
TWI570806B (en) * 2013-11-11 2017-02-11 東京威力科創股份有限公司 System and method for enhanced removal of metal hardmask using ultra violet treatment
US10867815B2 (en) * 2018-09-04 2020-12-15 Tokyo Electron Limited Photonically tuned etchant reactivity for wet etching
US10896824B2 (en) * 2018-12-14 2021-01-19 Tokyo Electron Limited Roughness reduction methods for materials using illuminated etch solutions

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512123A (en) * 1992-05-19 1996-04-30 Maxwell Laboratories Method for using pulsed optical energy to increase the bondability of a surface
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US20030025158A1 (en) * 2001-06-28 2003-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6631726B1 (en) * 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503464B1 (en) * 1999-08-12 2003-01-07 Sipec Corporation Ultraviolet processing apparatus and ultraviolet processing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512123A (en) * 1992-05-19 1996-04-30 Maxwell Laboratories Method for using pulsed optical energy to increase the bondability of a surface
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US6631726B1 (en) * 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate
US20030025158A1 (en) * 2001-06-28 2003-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1782461A4 *

Also Published As

Publication number Publication date
TW200608478A (en) 2006-03-01
JP2008504714A (en) 2008-02-14
KR20070026687A (en) 2007-03-08
EP1782461A4 (en) 2008-05-28
CN101006571A (en) 2007-07-25
EP1782461A2 (en) 2007-05-09
WO2006012174A2 (en) 2006-02-02
TWI271793B (en) 2007-01-21

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