1271793 九、發明說明： 【發明所屬之技術領域】 ^發明大體上與清潔一半導體基板相關，且更精確地說，與 乂 ^用一氧化溶液至一半導體基板表面之方法與系統相關。 【先前技術】 半導體裝置之製造包含很多的處理操作過程。這些操作過程 jf例來說，雜質植入、閘氧化物之魅、金屬間氧化物之 ㉝屬化沉5、光刻圖案化、餘刻操作過程、化學機械研磨 ί。111為這些操作過程產生微粒與殘餘物，必須要清潔晶圓 人;從而由晶圓表面移除污染物，例如黏附之微粒與吸附之化 、列t·有機的與金屬的）。污染物應該由晶圓表面移除，因為 4類扣物的存在對積體電路裝置之性能上具有不利的影響。 JR丨工ϋ清潔處理卫具之配置被提供。-種此類的雙面工具為-丄具，其包括一對對稱的刷子。圖1Α與1㈣明兩獅 彳;U兩侧晶圓絲11。圖认顯示—水平定向、習用之 圖1㈣示一垂直定向、習用之晶圓洗滌器100，。 Iru、兩者包括—對刷心咖與腿，各自被—對應的刷 而欠二二，所固定。如所示，每一刷子104a與104b之外表 =自^艮夕小節嶋與i㈣所覆蓋。不過，刷子魏、嶋 、产一本質上平滑之表面（亦即，沒有顯著的/J、節105a、 虛λΛ°^兩種定向方式中，隨著對稱的刷子购與1G4b以一對 應驗轉方向108a與_旋轉，一晶圓撕被擦洗。 鮮心1〇2a與_之物理構造完全相同。同樣地， 产減二外表面由相同材料所構成，因此具有相同密 ° 之配置中’—完全相同的壓力量被施用於每一接觸 。之“ ΐ子田1，*104b各自被施用完全相同之力量至晶圓 别’。因此，在先前技術之晶圓洗滌器中，即使只有晶圓 1271793 刖側念動組件，晶圓之前側與後側仍被相等的處理。 清潔化11(^隨著刷子馳與馳旋轉而被添加。 之污染物。^化 =化^品亦110 開晶圓。、、主、^J:10亦可運达被逐㈣被稀釋之污染物離 士:r可為去離子水或更具反應性之化學，例 ㈣ϋ錢添1^之化學、—或多種酸性溶液、或-或多種 由範二ΐ:所選擇之清潔化學品取決於欲移除之目標污染物。經 盘過氧二二5果目標污染物為—有機污染物，—般使用一硫酸 :、圓ϊΐΐ“物(此後表示為「SPM」）。清潔化學品110與/或 日日圓亦可被加熱以幫助清潔。 除有物非常f遍，111此每—晶圓幾乎總是需要清潔以移 染物。因此’ SPM很常被使用。不幸地s，SPM是昂貴 巧吝口iSPM之反應性質而難以處理。更進一步來說，廢料流/ 亦即，使用過並包含被移除之污染物的spm)要中和並安 j處理可以是昂貴的。有鑑於上述理由，一經過改善的、能夠 清潔有機污染物同時亦使成本、處理問題與廢料流/副產品 減至农少之清潔化學品是有需要的。 # 【發明内容】 廣泛地說，本發明經由提供應用一氧化溶液至一半導體基板 ，面之方法與系統來滿足這些需要。須注意的是，本發明可以許 夕方式加以貫行，包括作為製程、設備、系統、電腦可讀媒體、 '或裝置丄本發明之數種創造的實施例將在下文加以敘述。 • 一實施例提供一基板處理之方法。該方法包括應用一溶液至 y基板表面。至少一反應種可經由分離該溶液而產生。一基板之 第一，料被反應且經過反應之第一材料可被移除。該溶液可包括 由雙氧水既〇2)或水(H2〇)構成群組中之至少一者。。該氧化基可 包括由臭氧(〇3)、氧(〇2)、氫氧根(OH)、氧原子(〇)或氫的氧化物 1271793 (00H)構成群組中之至少一者。 反應種可以應用一光至該溶液以分離該溶液而產生。該光可 為一紫外光。該光可在溶液接觸基板表面前被應用至溶液。該光 可被應用至溶液至少一部分溶液接觸基板表面之時間。 該光可具有一少於或等於約3〇〇nm之波長。該光可具有一介 於約180nm與約22〇nm之波長。該光可使之平行化。該光可使之 脈動化。本質上只有一部分暴露於該光之第一材料會被氧化。 應用溶液至基板表面可包括在具有一少於反應種重組長度之 厚度之基板表面上形成一溶液層。該溶液可包括至少十個百分比 濃度之雙氧水。 第一材料可為一有機材料。第一材料在一遮罩層中可通過一 圖案暴露於外。 應用该/谷液至一基板表面可包括通過一動態液體彎月面應用 該溶液。，方法亦可包括沖洗基板表面。 另貝施例提供一處理一基板之系統。該系統包括一基板支 才!广板被支托於其上而一溶液層被支托於基板表面上。該系 統亦，ϋ能夠分離溶液以產生一反應種之能量源。 姓-其實施例提供—侧—基板中之有機層之系統，包 於-ί機板被支托於其上，加上該基板亦具有一形成 層中之圖i之案化遮罩層。—有機層之第—部分經由在遮罩 I表面。二二部分而暴露於外。—溶液層被支托於基板之 源可為—光源。該能量源可為—紫外光源。該能量源 外殼中。該能量源可被包括於—近接頭中，且溶液 ♦層可動綠體、f月面之巾被支托於基板表面上。 此系統中 月匕夠分離該溶液以產生至少一反應種之光源被包括於 之詳之j:::與優點ΐ下列以範例方式說明本發明原理 1白同伴隨之附圖當可更加明白。 1271793 【實施方式】 數個應用一氧化溶液至一半導體基板表面之示範的實施例現 在將加以救述L對那些熟悉此技藝者來說，顯而易見的是本發明 在不具有此處提出之部分或全部之特定細節之情況下仍可加以實 行。 SPM(亦即’硫酸與過氧化氩混合物)經由氧化該有機污染物以 由-基板表面清除有機污染物。spM亦可用於經由氧化該有機材 料以移除一有機材料層。 本發明之一實施例提供一系統與方法，使用過氧化氫(h2o2) Φ與一波長及強，經過選擇之光之組合，使在基板表面上之材料發 生反應(/例如」氧化或用其他方式使該材料發生反應）。經由範例可 知’過氧化，與波長及強度經過選擇之光可被用於移除有機殘餘 ，或聚合物薄膜(例如：光阻）。波長及強度經過選擇之光將過氧化 氳分離為，懈。錄亦可形成過氧化氫副產品(例如：過氧經 ，、原子^與臭氧）。羥基與過氧化氫副產品此後被指為氧化基。 氧化，非常容易與有機材料起作用，且可立即氧化有機材料以形 ，一氧化碳(C0)與其他有機副產品(例如：二氧化碳(c〇2^ HHC〇 等）。一氧化碳與其他有機副產品接著可以更輕易地加以移除，例 如由基板表面沖洗掉。 • 波長經過選擇之光可在一紫外光光譜之範圍内（亦即，介於波 長約180nm至300nm間）。當紫外光通過過氧化氫時，過氧化氫 吸^紫外光以形成氧化基。不過，紫外光在全部被過氧化氫吸收 之如’只能通過過氧化氫之一相當小的厚度(例如：約3mm)。因 此，如果一相當薄之過氧化氳薄膜(亦即，少於約2mm)被形成在 基板表面上’則氧化基可被形成於基板表面上以便與任何在基板 表面上之有機材料進行反應。 土 、在一實施例中，相當薄的過氧化氫薄膜可經由旋轉該基板形 成於基板表面上。經由範例可知，基板可被以大於約之速 度旋轉。隨著基板的旋轉速度增加，形成於基板表面上之過氧化 1271793 氫薄膜之厚度會減少。 -紫ίί源厚ΐί過氧化氫細娜成於基板表面上，接著 被應用至該過氧化氫薄膜。田士今」、丄叫千订先源專)可 且與任何=存在之有機材料進行反應。 ^上 氧化氫與紫外光之組合可被用於執行—近 由=ίΙ，製程。典型濕侧製程本質上為等向的。經 如乾光“不蝕刻之聚合物層包括-覆蓋-有機層(例 二之罩層被以-習用之 ioif ΐίίϊ。過氧化物薄膜之厚度可為介於1微米與約 旦所需騎氧化物細被軸，光(例如： I 。料級縣化絲絲無碰的基板表面 i行之不透明遮罩層保護之有機層中之有機材料 i=zf經由紫外光與過氧化氫之反應而形成，由於 口、率’、反絲至基絲面之擴散路徑長度，侧通常 只形成於紫外光照射其上之區域。 /,、目Ξ2,示一根據本發明之一實施例之清潔基板之系統遍之 统200包括-支托基板2〇8之基板支托2〇2。基板支托 致動裔203可沿著垂直方向2〇4移動基板支托2〇2與基板施亦 可沿著如方向206旋轉基板208。 基⑽包括數個層210、212。一洼處理溶液222(例如：水 /、或過氧化氫或其組合)被形成於基板208之一上表面208Α上。 一分嘴224可由一源226分配溶液222至上表面208Α上。 月b源230朝向基板208之上表面208Α。能源230可包括一 足=刀離溶液222以產生至少一反應性種(例如··至少一種氧化基） f光源或其他能源之源。在一實施例中，能源230被定向使得能 里232(亦即，光)由此發射，且沿著本質上與上表面208A垂直之 1271793 方向234發射。應了解的是，當光232被顯示沿著本質上盘上表 面208A垂直之方向234發射時，光可被導向任何方向使得果之 反應種被形成以便接觸欲與之進行反應之有機材料。光源23〇可 為-連績之^PLC/UV用D光源燈(D2 lamp)(亦即，約i8〇nm至約 220nm)，D2光源燈即是一脈動(例如：以一脈動率約$ 微秒脈動)的氙燈(亦即，約204至約300nm波長）。所選用之光源 取決於所需的反應性。經由範例可知，一第一有機材料可能盥更 多由在180nm範圍之紫外光產生之氧化基進行反應。或者，二第 二有機材#可能更快與由在30()nm |請之紫外光產生之氧化基進1271793 IX. Description of the Invention: [Technical Field of the Invention] The invention relates generally to cleaning a semiconductor substrate, and more particularly to a method and system for using an oxidizing solution to the surface of a semiconductor substrate. [Prior Art] The manufacture of a semiconductor device involves many processing operations. These operations are, for example, impurity implantation, gate oxide, 33 intermetallic oxides, lithographic patterning, residual processing, chemical mechanical polishing. 111 produces particles and residues for these operations, and the wafer must be cleaned; thus removing contaminants from the wafer surface, such as adhering particles and adsorption, column t·organic and metallic). Contaminants should be removed from the wafer surface because the presence of Category 4 fasteners has a detrimental effect on the performance of the integrated circuit device. The configuration of the JR 丨 ϋ cleaning treatment aid is provided. A double-sided tool of this type is a cookware that includes a pair of symmetrical brushes. Figure 1 Α and 1 (four) Ming two lions; U sides of the wafer wire 11. Figure shows the horizontal orientation, the conventional use of Figure 1 (d) shows a vertically oriented, conventional wafer washer 100. Iru, both include - the brush heart and the legs, each being the corresponding brush and owing two or two, fixed. As shown, each brush 104a and 104b is covered by a table = from the 小 小 嶋 and i (four). However, the brush Wei, Wei, produce an essentially smooth surface (that is, there is no significant /J, section 105a, virtual λΛ ° ^ two orientations, with the symmetrical brush purchase and 1G4b with a corresponding verification The direction 108a is rotated with _, and a wafer is torn and scrubbed. The physical structure of the fresh heart 1〇2a is exactly the same as that of _. Similarly, the outer surface of the production and the subtraction is composed of the same material, and therefore has the same density in the configuration. The exact same amount of pressure is applied to each contact. "Zizitian1, *104b are each applied exactly the same force to the wafer." Therefore, in prior art wafer scrubbers, even wafers only 1271793 The front side and the rear side of the wafer are still treated equally. Cleaner 11 (^ is added as the brush rotates and spins. Contaminant. ^化=化^品也110 Opening Round.,, Lord, ^J:10 can also be transported to the fourth (four) diluted pollutants: r can be deionized water or more reactive chemistry, (4) ϋ money added 1 ^ chemistry, - or a variety of acidic solutions, or - or a variety of vanadium: the cleaning chemicals selected depend on the desired Target pollutants. The target pollutants in the peroxygen 222 are organic pollutants, generally using monosulfuric acid: round sputum (hereinafter referred to as "SPM"). Cleaning chemicals 110 and / or day The yen can also be heated to help with cleaning. Except for very f, 111 wafers almost always need to be cleaned to transfer materials. So 'SPM is often used. Unfortunately, SPM is expensive and smart iSPM The nature of the reaction is difficult to handle. Further, the waste stream / that is, the spm used and containing the removed contaminants can be neutralized and can be expensive. For the above reasons, one pass Improved cleaning chemicals that are capable of cleaning organic contaminants while also reducing costs, processing issues, and waste streams/by-products to agronomics are not needed. [ SUMMARY OF THE INVENTION Broadly speaking, the present invention provides an application of an oxidizing solution. To a semiconductor substrate, a method and system for meeting these needs. It should be noted that the present invention can be implemented in a manner that includes, as a process, device, system, computer readable medium, 'or device Several embodiments of the invention will be described hereinafter. • An embodiment provides a method of substrate processing comprising applying a solution to the surface of a y substrate. At least one reactive species can be produced by isolating the solution. At the first of the substrate, the first material that is reacted and reacted may be removed. The solution may include at least one of the group consisting of hydrogen peroxide (2) or water (H2). . The oxidizing group may include at least one of the group consisting of ozone (〇3), oxygen (〇2), hydroxide (OH), oxygen atom (〇) or hydrogen oxide 1271793 (00H). The reaction species can be produced by applying a light to the solution to separate the solution. The light can be an ultraviolet light. This light can be applied to the solution before it contacts the surface of the substrate. This light can be applied to the time when at least a portion of the solution of the solution contacts the surface of the substrate. The light can have a wavelength of less than or equal to about 3 〇〇 nm. The light can have a wavelength between about 180 nm and about 22 Å. This light can be parallelized. This light can pulsate it. Essentially only a portion of the first material exposed to the light will be oxidized. Applying the solution to the surface of the substrate can include forming a layer of solution on the surface of the substrate having a thickness less than the recombination length of the reactive species. The solution can include at least ten percent strength hydrogen peroxide. The first material can be an organic material. The first material may be exposed to the outside through a pattern in a mask layer. Applying the /coline to a substrate surface can include applying the solution through a dynamic liquid meniscus. The method can also include rinsing the surface of the substrate. Another embodiment provides a system for processing a substrate. The system includes a substrate support; a wide plate is supported thereon and a layer of solution is supported on the surface of the substrate. The system also has the ability to separate the solution to produce an energy source for a reactive species. The last name - the embodiment provides a system for the side - the organic layer in the substrate, on which the board is supported, and the substrate also has a patterned mask layer in the formation layer. - the first part of the organic layer is via the surface of the mask I. Part two and exposed. - The source of the solution layer supported on the substrate can be a light source. The energy source can be an ultraviolet source. The energy source is in the housing. The energy source can be included in the proximal joint, and the solution ♦ layer of movable green body, the flanking towel is supported on the surface of the substrate. The light source in this system for separating the solution to produce at least one of the reactive species is included in the details: and the advantages of the present invention are illustrated by way of example. 1271793 [Embodiment] Several exemplary embodiments for applying an oxidizing solution to a surface of a semiconductor substrate will now be described. For those skilled in the art, it will be apparent that the present invention does not have the portion set forth herein or All specific details can still be implemented. SPM (i.e., a mixture of sulfuric acid and argon peroxide) oxidizes the organic contaminants to remove organic contaminants from the surface of the substrate. spM can also be used to remove an organic material layer by oxidizing the organic material. One embodiment of the present invention provides a system and method for reacting a material on a surface of a substrate (eg, "oxidation or other" using a combination of hydrogen peroxide (h2o2) Φ and a wavelength and a strong, selected light. The way the material reacts). By way of example, it is known that peroxidation, with selected wavelengths of light and intensity, can be used to remove organic residues, or polymer films (e.g., photoresist). The wavelength and intensity are separated by the selected light to separate the peroxide. Hydrogen peroxide by-products (eg, peroxygen, atomic and ozone) can also be formed. The hydroxyl and hydrogen peroxide by-products are hereafter referred to as oxidizing groups. Oxidation, very easy to work with organic materials, and can immediately oxidize organic materials to form, carbon monoxide (C0) and other organic by-products (for example: carbon dioxide (c〇2^ HHC〇, etc.). Carbon monoxide and other organic by-products can be easier The ground is removed, for example, by the surface of the substrate. • The wavelength of the selected light can be in the range of an ultraviolet spectrum (ie, between about 180 nm and 300 nm). When the ultraviolet light passes through hydrogen peroxide, Hydrogen peroxide absorbs ultraviolet light to form an oxidized group. However, the ultraviolet light is absorbed by all of the hydrogen peroxide as 'only through a relatively small thickness of hydrogen peroxide (for example: about 3 mm). Therefore, if a A thin ruthenium peroxide film (i.e., less than about 2 mm) is formed on the surface of the substrate. Then an oxidized group can be formed on the surface of the substrate to react with any organic material on the surface of the substrate. In an example, a relatively thin film of hydrogen peroxide can be formed on the surface of the substrate by rotating the substrate. By way of example, the substrate can be rotated at a speed greater than about. The rotation speed of the plate is increased, and the thickness of the peroxidized 1271793 hydrogen film formed on the surface of the substrate is reduced. - The thickness of the hydrogen peroxide layer is formed on the surface of the substrate, and then applied to the hydrogen peroxide film. ", 丄叫千订先源专) can react with any organic material that exists. ^ The combination of hydrogen peroxide and ultraviolet light can be used to perform - near = Ι, process. Typical wet side processes are essentially isotropic. Such as dry light "the polymer layer not etched includes - covered - organic layer (the second layer of the cover is used - ioif ΐ ίίϊ. The thickness of the peroxide film can be between 1 micron and Jordan's required riding oxide Fine shaft, light (for example: I. The organic material i=zf in the organic layer protected by the opaque mask layer of the substrate surface of the material-level filable layer is formed by the reaction of ultraviolet light and hydrogen peroxide. The side is usually formed only in the region where the ultraviolet light is irradiated due to the mouth, the rate ', and the length of the diffusion path from the reverse filament to the base surface. /,, view 2, showing a cleaning substrate according to an embodiment of the present invention. The system system 200 includes a substrate support 2〇2 of the support substrate 2〇8. The substrate support actuator 203 can move the substrate support 2〇2 along the vertical direction 2〇4 and the substrate can also be along The substrate 208 is rotated in a direction 206. The base (10) includes a plurality of layers 210, 212. A treatment solution 222 (e.g., water/, or hydrogen peroxide, or a combination thereof) is formed on one of the upper surfaces 208 of the substrate 208. The nozzle 224 can dispense the solution 222 from a source 226 to the upper surface 208. The month b source 230 faces the substrate 208. Surface 208. Energy source 230 can include a foot = knife away from solution 222 to produce at least one reactive species (eg, at least one oxidizing group) f source of light source or other source of energy. In one embodiment, energy source 230 is oriented to enable 232 (i.e., light) is thereby emitted and emitted along a 1271793 direction 234 that is substantially perpendicular to the upper surface 208A. It will be appreciated that when light 232 is displayed, it is emitted in a direction 234 that is substantially perpendicular to the upper surface 208A of the disk. The light can be directed in any direction such that the reactive species are formed to contact the organic material with which it is to be reacted. The light source 23 can be a D2 lamp for PLC/UV (ie, D2 lamp) (ie , about i8 〇 nm to about 220 nm), the D2 light source lamp is a pulsating lamp (for example, a pulse with a pulsation rate of about $ microseconds) (that is, a wavelength of about 204 to about 300 nm). The selected light source depends on The required reactivity. It can be seen from the example that a first organic material may react more with an oxidized group generated by ultraviolet light in the range of 180 nm. Alternatively, two second organic materials # may be faster with at 30 () Nm | please oxidize the basis of ultraviolet light
行反應。 所用之无源230之精確強度取決於所需的結果。經由範例可 知’隨著光源230的強度增加，所產生的氧化基之反應性也會增 加。因此，要快速移除某些相對較小的有機殘餘物，則一低強度 可能被選擇。反之，要蝕刻穿過一有機材料層，則強度可能要大 大的增加、。更進-步來說，某财機材料可能以更加需要的方式 ，脈動光源進行反應’此脈動絲尖峰強度(亦即，神)相對較 高，但在整個賴過程巾，具有相對較低之平均賊。經由範例 了知，-第-有機材料可能以—所f的方式(例如··及時的反應速 率、可預料、可控制等)與由一以2〇-4〇mJ、一脈動率8〇Hz之5 微秒脈動脈動之光源23G產生之氧化基進行反應。反之，如果光 源230—操作於-3瓦特之連續強度，第一有機材料可能不如所需 般進行反應(例如··與脈動光源相比，反應速率降低）。 用，清潔基板2G8之系統2GG，亦可被包圍在外殼24〇之内 部。外殼240可為任何形式之適當外殼。經由範例可知，可變因 力或其他魏因素(例如：从、淨化氣體或液體 /爪速4)在π办製私期間可加以控制。外殼24〇可為任何形 合設置所需因素之控制之外殼。 广二控制系統242亦包括其中。控制系、统242 _合至過氧化 氫源6、基板支托致動器203與光源230以便控制過氧化氫源、 1271793 基板支托致動器與光源之操作參數。控制系統242亦可控制可變 f素例如溫度、壓力或其絲清㈣程綱f要健制之環境因 素(例如··大氣、淨化氣體或液體流速等）。 "^圖!為根據本發明之—實施例，—反應種濃度與—由反應種 (例如：氧化基)產生處起之溶液222之深度對照之圖3〇〇。隨著光 液222，光強度依照溶液222之吸收速率而減少。隨著光強 反應種濃度相應地減少。因此，靠近溶液222表面處， 光強度隶大且因此對應的反應種濃度亦為最大。 的濃度至少在某種程度上為決定在基板表面2上 枓之反應性或氧化速率之因素。因此，如果—被選擇的 士到在基板表面2〇u之一所需的反應性，則溶 液222可具有-不大於_度d至基板表面2· 經由範例可知，如果溶液222包含—Reaction. The exact intensity of the passive 230 used depends on the desired result. By way of example, it is known that as the intensity of the light source 230 increases, the reactivity of the generated oxidized groups also increases. Therefore, to quickly remove some relatively small organic residues, a low intensity may be selected. Conversely, to etch through an organic material layer, the strength may increase greatly. More step-by-step, a financial machine material may react in a more desirable way, the pulsating light source 'this pulse wire peak strength (ie, God) is relatively high, but in the entire process towel, has a relatively low Average thief. By way of example, the -organic material may be in the form of - (for example, timely reaction rate, predictable, controllable, etc.) and one by 2〇-4〇mJ, a pulsation rate of 8〇Hz The oxidized group generated by the light source 23G of the 5 microsecond pulse arterial reaction is reacted. Conversely, if the light source 230 is operated at a continuous intensity of -3 watts, the first organic material may not react as desired (e.g., the reaction rate is reduced compared to the pulsating light source). The system 2GG for cleaning the substrate 2G8 may also be enclosed inside the casing 24''. Housing 240 can be a suitable housing of any form. By way of example, variable forces or other Wei factors (eg, purge, purge gas or liquid/claw speed 4) can be controlled during the pi process. The outer casing 24 can be any outer casing that is controlled by the desired factors. The second control system 242 is also included. The control system 242 is coupled to the hydrogen peroxide source 6, the substrate support actuator 203 and the light source 230 for controlling the operating parameters of the hydrogen peroxide source, the 1271793 substrate support actuator and the light source. The control system 242 can also control the environmental factors (e.g., atmosphere, purge gas or liquid flow rate, etc.) that are to be tempered, such as temperature, pressure, or its filamentation. "^Fig. Fig. 3 is a comparison of the concentration of the reaction species with the depth of the solution 222 from the reaction species (e.g., oxidized groups) according to the present invention. With the liquid 222, the light intensity decreases in accordance with the absorption rate of the solution 222. As the intensity of the light, the concentration of the species decreases accordingly. Therefore, near the surface of the solution 222, the light intensity is large and thus the corresponding reaction species concentration is also maximum. The concentration is at least to some extent a factor determining the reactivity or oxidation rate of the ruthenium on the substrate surface 2. Therefore, if the selected one is to have the desired reactivity at one of the substrate surfaces, then the solution 222 may have - no more than _ degrees d to the substrate surface. 2 By way of example, if the solution 222 contains -
Si紫外光y穿透之液體(例如：水)中之過乂化i，則 收率為100 cm且因此紫外光可穿過約〇 〇lcm。 ’、 如同對應溶液222之深度’亦可;n據、々 、曲 對應之反應性。經由範例可知，溶液f選擇一 質上紫外光或其他合狀能量形介化氫與一本 與70%稀釋之間。 _式了牙透之液體，例如：水，中i 反應種亦可由水(亦即，〇%過氧仆 論m波長、-足夠強度之深紫在一具有一短於約 體環境亦可為除了週遭空氣外^環产二2生。外殼240之氣 純氮之大氣可被用於使紫外光強^二::】可知’ 質上 包含任何惰性氣體，例如氬或其“取小。其他氣體可 溶液222之溫度亦可加以運用联埋二 可介於約G至約度C之間。、擇―對應的反應性。溫度 圖4A顯示根據本發明之一竇 外光而被蚀刻之基板208之一 C’f由暴露至過氧化氫與紫 基板208具有-約32〇〇埃厚心=。部* 402大概4〇mm寬。 予之表面層。圖4B為一圖450,是根 12 1271793 ίίΐΞ之一實施例’一穿過區他之掃描。如圖450所示，表 Ϊ層二Ϊ 2⑻埃之厚度。表面層被朝著該部分之中心，_In the case where the Si ultraviolet light y penetrates the liquid (for example, water), the yield is 100 cm and thus the ultraviolet light can pass through about 〇1 cm. ', as the depth of the corresponding solution 222' can also be; n, the corresponding reactivity of 々, 曲. By way of example, solution f is selected between a mass of ultraviolet light or other conjugated energy-type hydrogenated hydrogen and a between 70% dilution. _ type of liquid, such as water, medium i species can also be from water (that is, 〇% peroxygen m wavelength, - sufficient intensity of deep purple in one with a shorter than the body environment can also be In addition to the surrounding air, the atmosphere of the pure nitrogen of the outer casing 240 can be used to make the ultraviolet light strong: 2] It can be seen that the mass contains any inert gas, such as argon or its "small. Others. The temperature of the gas solvable solution 222 can also be used to be buried between about G and about C. The corresponding reactivity is selected. Temperature Figure 4A shows the substrate 208 etched according to one of the sinus lights of the present invention. A C'f is exposed to hydrogen peroxide and the violet substrate 208 has a thickness of about -32 angstroms = part * 402 is about 4 〇 mm wide. The surface layer is given. Figure 4B is a diagram 450, is the root 12 1271793 ίίΐΞ an embodiment of a scan through a zone. As shown in Fig. 450, the thickness of the surface layer is 2 (8) angstroms. The surface layer is oriented toward the center of the portion, _
埃之厚度。平均上，表面層之厚度被縮減d S —有=s 一 =虞=明之一實施例之基板208。基板208包括 ϋ層504 ’形成於基板之頂端。一圖案化遮罩層5〇2被形成於 用於】上。遮罩層502可為任何阻播光或至少那些可能被 暂反應性種之光波長之傳送之材料。圖案化遮罩層502本 ^亦較位於下方之有機層504不易對反應性種有反應(例如：反 ί?〇了對Ϊ罩層5G2有麵性〉。一溶液222被支托於圖案化遮罩 ^ 502之表面上。圖案化遮罩層5〇2包括一開孔，藉此位於下 方之有機層504得以暴露於外。 光源230導向光232穿過溶液222至遮罩層502之上。反應 性種512以星形表示。反應性種512被產生於溶液222之中^ 在光232接觸溶液之處。如所示，反應性種512接近溶液222之 表，處濃度非常高。反之，反應性種512之濃度隨著溶液222之 深度增加而減少(例如：接近被蝕刻至有機層5〇4中之形 4 部。 當fJt性種512被產生於溶液222之中，只在光接觸溶液之 處時’氧化基本質上不存在於區510。因此，有機層5〇4之侧通 常被限制於在光源23G之直接「視線」中之有機層部分。雖鈥反 應性種512未被產生於區510中，一相當低濃度的反應性種確實 仍存在於直接光之外部，直到該低濃度之反應性種經歷重組為 止。此距離被稱為一重組長度，且更定義為反應性種與光232持 續直接反應之距離。因此，有機層之蝕刻本質上為非/等向性。此 在減少、了此舍生於先如技術(專向濕姓刻製程）中之基姓時 顯著的優勢。 某些裝置與製程不能輕易容許暴露於某些波長之光或其他能 量源。經由範例可知，例如經由引起腐蝕或其他方式，紫外光可 13 1271793 ^壞某些結構。因此，可能不想要暴露基板2〇8之表面2湯於紫 ^ °圖6為根據本發明之—實關，—用來產生反應性種於基 板表面之上游之純6GG之詳細圖。系統_包括—被包圍在一 ，源外威610中之光源230。光源外殼61〇包括阻擋紫外光照射在 ，面208A亡之擋板612。在操作過程中，當暴露於光232中時， 二232以第，辰度產生反應性種614(例如：氧化基)在溶液222 。^上所述’在光232之外部’氧化基之濃度快速消散。然而， 如，第-濃度足夠高濃縮’那麼之後氧化基614通麟板612並The thickness of the ang. On average, the thickness of the surface layer is reduced by d S - there is = s = = 虞 = one of the substrates 208 of the embodiment. The substrate 208 includes a tantalum layer 504' formed on the top end of the substrate. A patterned mask layer 5〇2 is formed on the substrate. Mask layer 502 can be any material that blocks light or at least those that may be transmitted by wavelengths of light of a transient species. The patterned mask layer 502 is also less susceptible to reactive species than the organic layer 504 located below (for example, the surface layer of the cover layer 5G2 is reversed). A solution 222 is supported by the patterning. The surface of the mask ^ 502. The patterned mask layer 5 〇 2 includes an opening whereby the underlying organic layer 504 is exposed. The light source 230 directs light 232 through the solution 222 onto the mask layer 502. The reactive species 512 are represented by a star. The reactive species 512 are produced in solution 222 where the light 232 contacts the solution. As shown, the reactive species 512 are near the surface of the solution 222 at a very high concentration. The concentration of the reactive species 512 decreases as the depth of the solution 222 increases (eg, near the shape 4 that is etched into the organic layer 5〇4. When the fJt species 512 is produced in the solution 222, only in the light At the point of contact with the solution, 'oxidation is not present in the region 510. Therefore, the side of the organic layer 5〇4 is generally limited to the portion of the organic layer in the direct "line of sight" of the source 23G. Produced in zone 510, a relatively low concentration of reactive species does exist in straight Outside the light, until the low concentration of the reactive species undergoes recombination. This distance is referred to as a recombination length and is more defined as the distance that the reactive species continues to react directly with light 232. Therefore, the etching of the organic layer is essentially It is non-isotropic. This is a significant advantage in reducing the base name in the first technology (specifically to the wet name engraving process). Some devices and processes cannot easily tolerate exposure to certain wavelengths. Light or other energy source. By way of example, for example, by causing corrosion or other means, the ultraviolet light may be 13 1271793 ^ some structures. Therefore, it may not be desired to expose the surface of the substrate 2〇8 to the purple ^ ° Figure 6 In accordance with the present invention, a detailed map for generating a reactive 6GG upstream of the surface of the substrate is provided. The system includes a light source 230 enclosed in a source 610. The light source housing 61 includes Blocking ultraviolet light is irradiated on the face 208A dead baffle 612. During operation, when exposed to the light 232, the second 232 produces a reactive species 614 (e.g., an oxidized group) at a solution 222. Above mentioned in 'light 232 Section 'of the rapid dissipation of the concentration of oxidized groups, however, such as, - of concentration sufficiently high concentration' then after the oxidation base plate 612 and 614 pass Lin
以氧化基之第二濃制達表面2G8A，化基之第二濃度足以氧化 在表面208A上之有機材料。 圖7為根據本發明之一實施例，一用來產生反應性種於基板 表面208A之上游之系統700之圖。系統7〇〇包括一光源外殼61〇, 其中光源230本質上被定向為平行表面2〇8a。因此光232,本質上 被平行應用至表面208A。擋板612,保證光232,被阻擋而無法到逵 表面208A。 圖8為根據本發明之一實施例，一用來支托一動態液體彎月 面之近接頭810之圖。近接頭810可包括光源外殼61〇。反應性種 =4被產生於光源外殼610中。包括反應性種614之溶液經由一動 悲液體考月面812被運送至表面。近接頭wo支托動態液體彎月 面812。溶液經由一溶液源82〇被提供予近接頭81〇。一第二溶液 (例如：異丙醇(IPA))亦可由一第二溶液源824提供。溶液與第二 溶液之其一或兩者至少在某種程度上可經由一本質上惰性之氣體 (例如：氮、氬等)被運送至近接頭。一真空源232由一真空源822 被應用至近接頭810。包括於近接頭810中之光源外殼610可能或 可能不包括擔板612。在不包括擔板之光源外殼610中，反應性種 可如上述般被產生於基板表面。 近接頭810之不同的實施例被詳細地敘述於共同擁有、申請 於2002年12月24日、標題為「彎月面、真空、異丙醇蒸汽、乾 燥歧管」之美國專利申請案第1〇/33〇,843號，與共同擁有、申請 1271793 ‘又H9月Λ'日、標題為「使用支承於極接近晶圓表面之多 笛'、η出口乾燥半導體晶圓表面之方法與設備」之美國專利申 :iim839號。近接頭之獨的實施例與細亦被敘述於 、申請於2002年12月24曰、標題為「以彎月面、真空、 10/33089^ 而3〇,897 7虎，與申請於2003年3月31日 =」，美國專利申請案第10/4〇4,27〇號，及申請於2〇〇3年= 之美固Ϊίί「使用一動態液體f月面處理一基板之方法與系統」 方半if為根據本發明之一實施例’產生氧化基以處理一基板之 m程圖。在一操作過程9〇5中，一基板被接 反祕氫、或賴魏化狀—齡物、或其他 〜、14種了如此處所述由此產生之溶液。 有所，反?性種被產生於溶液之中。以-具 4 二"、強度之光照射*幻谷液可產生反應性種。經由範例可 而口產I或夕個氧化基可由—包含水、過氧化氫或其—組合之溶液 需的920中’反應性種被應用至基板表面，直到一所 (例 1有被進行反應為止。反應性種可被產生在基板表面 i其J： 2圖-5所述)或基板表面之「上游」(例如：如圖6-8所述）。 一 面上，反應性種很快地與至少一部分的有機材料(例如·· 百機1層或一有機殘餘物)進行反應。 矣在非必須的操作過程925中，反應性種的產生可被中止， 程於洗以移除任何經過反狀有機材料。财法操作過 六次^道上述實_後，應了解本發明可能糊不闕、包含儲 子1 於電知系統中之電腦執行操作過程。這些操作過程為那些 15 1271793 要求物理量之物理操作。a 存、轉換、結合、比公：，雖然非必要’這些量採取可被儲 步來說，被執行的操3作之電子或磁訊號麵。更進-測定或比較。 ，、乍、吊以名同加以提及，例如產生、識別、 操作。本發明亦之任何操作過程為有用之機器 關。該設備可能特別為了要丁^^作過程之一 I置或一設備相 途之電腦’經由儲存於電腦中擇;=5-般用 特別地是，不同的—㈣式選擇性地活化或配置。 腦程式-起使用，或它%能更據所寫之電 行要求的操作過程。 L且的專⑽設備以執The second concentration of the oxidizing group reaches the surface 2G8A, and the second concentration of the chemistry is sufficient to oxidize the organic material on the surface 208A. Figure 7 is a diagram of a system 700 for generating reactive species upstream of substrate surface 208A, in accordance with an embodiment of the present invention. The system 7A includes a light source housing 61〇, wherein the light source 230 is oriented substantially parallel to the surface 2〇8a. Thus light 232 is essentially applied in parallel to surface 208A. The baffle 612 ensures that the light 232 is blocked from reaching the surface 208A. Figure 8 is a diagram of a proximal joint 810 for supporting a dynamic liquid meniscus, in accordance with one embodiment of the present invention. The proximal joint 810 can include a light source housing 61〇. The reactive species = 4 is produced in the light source housing 610. The solution comprising reactive species 614 is delivered to the surface via a turbulent liquid meniscus 812. The near joint wo supports the dynamic liquid meniscus 812. The solution is supplied to the proximal link 81 through a solution source 82. A second solution (e.g., isopropanol (IPA)) may also be provided by a second source of solution 824. One or both of the solution and the second solution may be transported to the proximal joint at least to some extent via an essentially inert gas (e.g., nitrogen, argon, etc.). A vacuum source 232 is applied to the proximal joint 810 by a vacuum source 822. Light source housing 610 included in proximal connector 810 may or may not include shoulder plate 612. In the light source housing 610 which does not include the carrier, the reactive species can be produced on the surface of the substrate as described above. Different embodiments of the proximal joint 810 are described in detail in U.S. Patent Application Serial No. 1 which is commonly owned and filed on December 24, 2002, entitled "Curved Moon, Vacuum, Isopropyl Alcohol, Dry Manifold" 〇/33〇, No. 843, and co-owned, applied for 1271793 'H9 month', entitled "Using methods and equipment for supporting the surface of a wafer that is very close to the surface of the wafer, η exit dry semiconductor wafer" US patent application: iim839. The unique embodiment and details of the proximal joint are also described in the application for December 24, 2002, entitled "Mental Moon, Vacuum, 10/33089^ and 3〇, 897 7 Tiger, and Application in 2003 March 31st =", U.S. Patent Application Serial No. 10/4, 4, 27, and application in 2002. = "The method and system for processing a substrate using a dynamic liquid f-surface" Square half if is a m-pass diagram for generating an oxidized group to process a substrate in accordance with an embodiment of the present invention. In an operation procedure 〇5, a substrate is subjected to anti-hydrogen, or smear-age, or other ~, 14 kinds of solutions thus produced as described herein. Some, anti-sex species are produced in solution. Reactive species can be produced by irradiating * phantom solution with - 4 4 " intensity light. By way of example, the oral production I or the oxidized group can be applied to the surface of the substrate by the 920 'reactive species required for the solution containing water, hydrogen peroxide or a combination thereof until one (the sample 1 is reacted) The reactive species can be produced on the surface of the substrate (the J: 2 Figure-5) or "upstream" of the surface of the substrate (for example, as depicted in Figures 6-8). On one side, the reactive species reacts rapidly with at least a portion of the organic material (e.g., a layer of 1 or an organic residue). In a non-essential operation 925, the generation of reactive species can be aborted and washed to remove any trans-organic material. After the operation of the financial method has been carried out six times, it should be understood that the present invention may be confusing, and the computer including the storage 1 in the electronic knowledge system performs the operation process. These procedures are the physical operations required for those 15 1271793 physical quantities. a deposit, conversion, combination, comparison: although not necessary 'these quantities take the electronic or magnetic signal surface that can be executed for the operation. Further - measure or compare. , , 乍, 吊, to mention by name, such as production, identification, operation. Any of the operational procedures of the present invention are useful for machine closure. The device may be specially activated or configured by means of a computer that is placed in the middle of a process or a device that is connected to the computer by a computer; in particular, different - (iv) . The brain program - from the use, or it can be based on the operating procedures required by the written circuit. L and the special (10) equipment to implement
式。在—電腦可讀之媒體上之電腦可讀之 料之資料儲讀取之資 ΙΖ\ ：ΖΤ1 ' —〇Μ ^ CD.Rformula. The information stored in the computer-readable material on a computer-readable medium 读取\:ΖΤ1 ' —〇Μ ^ CD.R
先學及非光學資料儲存裝置。電腦可讀婵 :亦了，:連接網路之電腦系統加 S 被以-分散式龄_存並執行。 了樣式 更進-步應了解以上圖之操作 疋必須°更進—步來說’任何上圖所述之f程 =:何之一或組合之簡'職或其他硬碟上 雖然上述的發明為了清楚了解的 述，應明白某些改變與修改仍可在附加之專利申請 因此，本，例應被視為作為說明而非限制，且於 此處之細即，而仍可在附加之專利中請範圍與相等物之中^修 16 1271793 【圖式簡單說明】 圖1A顯示一水平定向、習用之晶圓洗滌器。 圖1B顯示一垂直定向、習用之晶圓洗滌器。 之側=騎根據本發明之—實補，—肋清潔—基板之系統 ^為根據本發明之—實關，—氧化基濃度對照 產生處起之溶液深度之圖。 乳 圖4A顯示根據本發明之一實施例，暴露於過 之已被蝕刻之基板之一部分。 飞，、务外先Learn first and non-optical data storage devices. Computer readable 婵: Also, the computer system connected to the network plus S is stored and executed in a distributed age. The style is more advanced - the steps should be understood. The operation of the above diagram must be further advanced. Step by step. Any of the above-mentioned f-processes:: one of the combinations or the combination of the simple or other hard disk, although the above invention For clarity of understanding, it should be understood that certain changes and modifications may still be made in the appended patent application. Therefore, the present invention should be considered as illustrative and not limiting, and Among the ranges and equivalents, the repairs 16 1271793 [Simple description of the drawings] Figure 1A shows a horizontally oriented, conventional wafer scrubber. Figure 1B shows a vertically oriented, conventional wafer scrubber. Side = Ride according to the present invention - a system of solid complement, rib cleaning - substrate ^ is a graph of the depth of the solution at which the oxidation base concentration is calculated according to the present invention. Milk Figure 4A shows a portion of a substrate that has been exposed to etched, in accordance with an embodiment of the present invention. Fly, outside
圖4B為根據本發明之一實施例之一圖，是一穿過區域之 描0 圖5顯示根據本發明之一實施例之一基板。 圖6為根據本發明之一實施例，一用以在基板表 生氧化基之系統之詳圖。 良 圖7為根據本發明之一實施例，一用以在基板表面產生氧化 基之系統之圖。 圖8為根據本發明之一實施例，一用以支托一動態液體彎月 面之近接頭之圖。 圖9為根據本發明之一實施例，產生氧化基以處理一基板之 方法操作過程之流程圖。 【主要元件符號說明】 100〜水平定向、習用之晶圓洗滌器 100’〜垂直定向、習用之晶圓洗滌器 102a〜刷心 102b〜刷心 104a〜刷子 104b〜刷子 105a〜小節 17 1271793 105b〜小節 106〜晶圓 108a〜旋轉方向 108b〜旋轉方向 110〜清潔化學品 112〜喷嘴或水滴出口 200〜清潔基板之系統 ^ 202〜基板支托 203〜基板支托致動器 204〜垂直方向 206〜方向 208〜基板 208A〜基板208之一上表面 210〜層 212〜層 222〜處理溶液 224〜分配喷嘴 226〜源 230〜能源 230’〜光源 232〜能量 232,〜光 234〜方向 240〜外殼 242〜控制系統 300〜圖 402〜部分 450〜圖 502〜圖案化遮罩層 1271793 504〜有機層 508〜開孔 510〜區 512〜反應性種 514〜形體 600〜系統 610〜光源外殼 612〜擋板 612,〜擋板 614〜反應性種 鲁700〜系統 810〜近接頭 812〜動態液體彎月面 820〜溶液源 822〜真空源 824〜第二溶液源 W〜晶圓Figure 4B is a diagram of an embodiment of the present invention, showing a through-area. Figure 5 shows a substrate in accordance with one embodiment of the present invention. Figure 6 is a detailed view of a system for forming an oxidized substrate on a substrate in accordance with one embodiment of the present invention. Figure 7 is a diagram of a system for generating an oxide group on the surface of a substrate in accordance with an embodiment of the present invention. Figure 8 is a diagram of a proximal joint for supporting a dynamic liquid meniscus, in accordance with one embodiment of the present invention. Figure 9 is a flow diagram showing the operation of a method of generating an oxidizing group to process a substrate in accordance with one embodiment of the present invention. [Main component symbol description] 100 to horizontal orientation, conventional wafer scrubber 100' to vertical orientation, conventional wafer scrubber 102a to brush core 102b to brush core 104a to brush 104b to brush 105a to measure 17 1271793 105b~ Section 106 to wafer 108a to rotation direction 108b to rotation direction 110 to cleaning chemical 112 to nozzle or water droplet outlet 200 to cleaning substrate system 202 to substrate holder 203 to substrate holder actuator 204 to vertical direction 206~ Direction 208 ~ Substrate 208A ~ Substrate 208 one surface 210 ~ layer 212 ~ layer 222 ~ processing solution 224 ~ dispensing nozzle 226 ~ source 230 ~ energy 230 ' ~ light source 232 ~ energy 232, ~ light 234 ~ direction 240 ~ housing 242 ~ Control system 300 ~ Figure 402 ~ Section 450 ~ Figure 502 ~ Patterned mask layer 1271793 504 ~ Organic layer 508 ~ Opening 510 ~ Area 512 ~ Reactive species 514 ~ Shape 600 ~ System 610 ~ Light source housing 612 ~ Baffle 612, ~ baffle 614 ~ reactive species Lu 700 ~ system 810 ~ near joint 812 ~ dynamic liquid meniscus 820 ~ solution source 822 ~ vacuum source 824 ~ second solution source W ~ wafer