IL161297A0 - Tunable multi-zone gas injection system - Google Patents
Tunable multi-zone gas injection systemInfo
- Publication number
- IL161297A0 IL161297A0 IL16129702A IL16129702A IL161297A0 IL 161297 A0 IL161297 A0 IL 161297A0 IL 16129702 A IL16129702 A IL 16129702A IL 16129702 A IL16129702 A IL 16129702A IL 161297 A0 IL161297 A0 IL 161297A0
- Authority
- IL
- Israel
- Prior art keywords
- gas
- injection system
- zone
- tunable multi
- flow rate
- Prior art date
Links
- 238000002347 injection Methods 0.000 title abstract 2
- 239000007924 injection Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3344—Problems associated with etching isotropy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32879601P | 2001-10-15 | 2001-10-15 | |
US10/024,208 US20030070620A1 (en) | 2001-10-15 | 2001-12-21 | Tunable multi-zone gas injection system |
PCT/US2002/032057 WO2003034463A2 (en) | 2001-10-15 | 2002-10-09 | Tunable multi-zone gas injection system |
Publications (1)
Publication Number | Publication Date |
---|---|
IL161297A0 true IL161297A0 (en) | 2004-09-27 |
Family
ID=26698179
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL16129702A IL161297A0 (en) | 2001-10-15 | 2002-10-09 | Tunable multi-zone gas injection system |
IL161297A IL161297A (en) | 2001-10-15 | 2004-04-04 | Tunable multi-zone gas injection system |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL161297A IL161297A (en) | 2001-10-15 | 2004-04-04 | Tunable multi-zone gas injection system |
Country Status (11)
Country | Link |
---|---|
US (3) | US20030070620A1 (xx) |
EP (1) | EP1444717B1 (xx) |
JP (2) | JP5043288B2 (xx) |
KR (1) | KR100954709B1 (xx) |
CN (2) | CN1639831A (xx) |
AT (1) | ATE358887T1 (xx) |
AU (1) | AU2002356543A1 (xx) |
DE (1) | DE60219343T2 (xx) |
IL (2) | IL161297A0 (xx) |
TW (1) | TW589658B (xx) |
WO (1) | WO2003034463A2 (xx) |
Families Citing this family (140)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4338355B2 (ja) * | 2002-05-10 | 2009-10-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7534363B2 (en) * | 2002-12-13 | 2009-05-19 | Lam Research Corporation | Method for providing uniform removal of organic material |
US7169231B2 (en) * | 2002-12-13 | 2007-01-30 | Lam Research Corporation | Gas distribution system with tuning gas |
JP2005149956A (ja) * | 2003-11-17 | 2005-06-09 | Ulvac Japan Ltd | 大面積高均一プラズマ処理方法及び装置 |
KR101025323B1 (ko) * | 2004-01-13 | 2011-03-29 | 가부시키가이샤 아루박 | 에칭 장치 및 에칭 방법 |
US20070066038A1 (en) | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
KR100782369B1 (ko) * | 2004-11-11 | 2007-12-07 | 삼성전자주식회사 | 반도체 제조장치 |
US7723236B2 (en) * | 2005-01-18 | 2010-05-25 | Tokyo Electron Limited | Gas setting method, gas setting apparatus, etching apparatus and substrate processing system |
JP2006210727A (ja) * | 2005-01-28 | 2006-08-10 | Hitachi High-Technologies Corp | プラズマエッチング装置およびプラズマエッチング方法 |
JP2008532324A (ja) * | 2005-03-03 | 2008-08-14 | アプライド マテリアルズ インコーポレイテッド | 制御された処理結果分布を有するエッチング方法 |
US7722719B2 (en) * | 2005-03-07 | 2010-05-25 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US8298336B2 (en) * | 2005-04-01 | 2012-10-30 | Lam Research Corporation | High strip rate downstream chamber |
US8088248B2 (en) | 2006-01-11 | 2012-01-03 | Lam Research Corporation | Gas switching section including valves having different flow coefficients for gas distribution system |
US7685965B1 (en) * | 2006-01-26 | 2010-03-30 | Lam Research Corporation | Apparatus for shielding process chamber port |
JP4833778B2 (ja) * | 2006-02-13 | 2011-12-07 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US7928366B2 (en) * | 2006-10-06 | 2011-04-19 | Lam Research Corporation | Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access |
US7932181B2 (en) * | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
CN101137266B (zh) * | 2006-08-28 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 气体注射装置 |
KR20080023172A (ko) * | 2006-09-08 | 2008-03-12 | 주성엔지니어링(주) | 기판 가장자리 식각 장치 |
US7967930B2 (en) * | 2006-10-30 | 2011-06-28 | Applied Materials, Inc. | Plasma reactor for processing a workpiece and having a tunable cathode |
US20080099450A1 (en) * | 2006-10-30 | 2008-05-01 | Applied Materials, Inc. | Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution |
US9218944B2 (en) | 2006-10-30 | 2015-12-22 | Applied Materials, Inc. | Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors |
US7976671B2 (en) * | 2006-10-30 | 2011-07-12 | Applied Materials, Inc. | Mask etch plasma reactor with variable process gas distribution |
US8002946B2 (en) * | 2006-10-30 | 2011-08-23 | Applied Materials, Inc. | Mask etch plasma reactor with cathode providing a uniform distribution of etch rate |
US8012366B2 (en) * | 2006-10-30 | 2011-09-06 | Applied Materials, Inc. | Process for etching a transparent workpiece including backside endpoint detection steps |
US20080099437A1 (en) * | 2006-10-30 | 2008-05-01 | Richard Lewington | Plasma reactor for processing a transparent workpiece with backside process endpoint detection |
US8017029B2 (en) * | 2006-10-30 | 2011-09-13 | Applied Materials, Inc. | Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside |
JP5074741B2 (ja) * | 2006-11-10 | 2012-11-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
US20080156264A1 (en) * | 2006-12-27 | 2008-07-03 | Novellus Systems, Inc. | Plasma Generator Apparatus |
US20080194112A1 (en) * | 2007-02-09 | 2008-08-14 | International Business Machines Corporation | Method and system for plasma etching having improved across-wafer etch uniformity |
US7846497B2 (en) * | 2007-02-26 | 2010-12-07 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
JP5357037B2 (ja) * | 2007-03-23 | 2013-12-04 | パナソニック株式会社 | プラズマドーピング装置及び方法 |
KR100872312B1 (ko) * | 2007-05-04 | 2008-12-05 | 주식회사 디엠에스 | 에칭가스 제어시스템 |
US8144309B2 (en) * | 2007-09-05 | 2012-03-27 | Asml Netherlands B.V. | Imprint lithography |
US8137463B2 (en) * | 2007-12-19 | 2012-03-20 | Applied Materials, Inc. | Dual zone gas injection nozzle |
US8999106B2 (en) * | 2007-12-19 | 2015-04-07 | Applied Materials, Inc. | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
US20090162570A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Apparatus and method for processing a substrate using inductively coupled plasma technology |
JP5223377B2 (ja) | 2008-02-29 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマ処理装置用の電極、プラズマ処理装置及びプラズマ処理方法 |
US9591738B2 (en) * | 2008-04-03 | 2017-03-07 | Novellus Systems, Inc. | Plasma generator systems and methods of forming plasma |
CN101585019B (zh) * | 2008-05-19 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种半导体加工装置以及用于该装置中的喷嘴结构 |
KR101223945B1 (ko) * | 2008-08-18 | 2013-01-21 | 고쿠리츠 다이가쿠 호진 교토 다이가쿠 | 클러스터 분사식 가공 방법, 반도체 소자, 미소 기전 소자, 및 광학 부품 |
US8747963B2 (en) * | 2009-01-23 | 2014-06-10 | Lockheed Martin Corporation | Apparatus and method for diamond film growth |
WO2011031321A2 (en) * | 2009-09-10 | 2011-03-17 | Lam Research Corporation | Replaceable upper chamber parts of plasma processing apparatus |
WO2011030326A1 (en) * | 2009-09-11 | 2011-03-17 | Ramot At Tel-Aviv University Ltd. | System and method for generating a beam of particles |
US20110305835A1 (en) * | 2010-06-14 | 2011-12-15 | S.O.I.Tec Silicon On Insulator Technologies | Systems and methods for a gas treatment of a number of substrates |
US10658161B2 (en) * | 2010-10-15 | 2020-05-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
US8133349B1 (en) | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
US20120152900A1 (en) * | 2010-12-20 | 2012-06-21 | Applied Materials, Inc. | Methods and apparatus for gas delivery into plasma processing chambers |
US8288174B1 (en) | 2011-03-24 | 2012-10-16 | Tokyo Electron Limited | Electrostatic post exposure bake apparatus and method |
JP5955062B2 (ja) | 2011-04-25 | 2016-07-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8562785B2 (en) | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
US9245717B2 (en) | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
JP5666991B2 (ja) * | 2011-06-08 | 2015-02-12 | 東京エレクトロン株式会社 | 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置 |
US9305810B2 (en) | 2011-06-30 | 2016-04-05 | Applied Materials, Inc. | Method and apparatus for fast gas exchange, fast gas switching, and programmable gas delivery |
US9947512B2 (en) * | 2011-10-25 | 2018-04-17 | Lam Research Corporation | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
US9574268B1 (en) * | 2011-10-28 | 2017-02-21 | Asm America, Inc. | Pulsed valve manifold for atomic layer deposition |
JP5865916B2 (ja) * | 2011-10-31 | 2016-02-17 | 京セラ株式会社 | ガスノズル、これを用いたプラズマ装置およびガスノズルの製造方法 |
US9396912B2 (en) * | 2011-10-31 | 2016-07-19 | Lam Research Corporation | Methods for mixed acid cleaning of showerhead electrodes |
US9941100B2 (en) | 2011-12-16 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle |
US9388492B2 (en) | 2011-12-27 | 2016-07-12 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
US20130180954A1 (en) * | 2012-01-18 | 2013-07-18 | Applied Materials, Inc. | Multi-zone direct gas flow control of a substrate processing chamber |
US9679751B2 (en) | 2012-03-15 | 2017-06-13 | Lam Research Corporation | Chamber filler kit for plasma etch chamber useful for fast gas switching |
US9162236B2 (en) * | 2012-04-26 | 2015-10-20 | Applied Materials, Inc. | Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus |
US20130337172A1 (en) * | 2012-06-19 | 2013-12-19 | Synos Technology, Inc. | Reactor in deposition device with multi-staged purging structure |
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US10541183B2 (en) * | 2012-07-19 | 2020-01-21 | Texas Instruments Incorporated | Spectral reflectometry window heater |
US10174422B2 (en) * | 2012-10-25 | 2019-01-08 | Applied Materials, Inc. | Apparatus for selective gas injection and extraction |
CN103068137A (zh) * | 2012-11-21 | 2013-04-24 | 中国科学院微电子研究所 | 一种进气结构及等离子体工艺设备 |
CN103060777B (zh) * | 2012-12-25 | 2014-12-31 | 王奉瑾 | 激光激发cvd镀膜设备 |
JP6061384B2 (ja) * | 2013-01-17 | 2017-01-18 | 国立大学法人静岡大学 | アルミ・樹脂接合体の製造方法及びアルミ・樹脂接合体 |
US9790596B1 (en) * | 2013-01-30 | 2017-10-17 | Kyocera Corporation | Gas nozzle and plasma device employing same |
US9314854B2 (en) | 2013-01-30 | 2016-04-19 | Lam Research Corporation | Ductile mode drilling methods for brittle components of plasma processing apparatuses |
US9399228B2 (en) | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
US8893702B2 (en) | 2013-02-20 | 2014-11-25 | Lam Research Corporation | Ductile mode machining methods for hard and brittle components of plasma processing apparatuses |
TWI473903B (zh) * | 2013-02-23 | 2015-02-21 | Hermes Epitek Corp | 應用於半導體設備的噴射器與上蓋板總成 |
US9536710B2 (en) * | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
JP6359627B2 (ja) * | 2013-03-15 | 2018-07-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高対称四重ガス注入によるプラズマリアクタ |
US9142456B2 (en) | 2013-07-30 | 2015-09-22 | Lam Research Corporation | Method for capping copper interconnect lines |
US9275869B2 (en) * | 2013-08-02 | 2016-03-01 | Lam Research Corporation | Fast-gas switching for etching |
JP5917477B2 (ja) | 2013-11-29 | 2016-05-18 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
JP6317921B2 (ja) * | 2013-12-20 | 2018-04-25 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US10249511B2 (en) * | 2014-06-27 | 2019-04-02 | Lam Research Corporation | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus |
JP6499835B2 (ja) * | 2014-07-24 | 2019-04-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
TWM503056U (zh) * | 2014-07-24 | 2015-06-11 | Wen-Hsin Chiang | 用於電漿反應裝置之襯套單元 |
US10113232B2 (en) | 2014-07-31 | 2018-10-30 | Lam Research Corporation | Azimuthal mixer |
US10465288B2 (en) * | 2014-08-15 | 2019-11-05 | Applied Materials, Inc. | Nozzle for uniform plasma processing |
KR20160021958A (ko) * | 2014-08-18 | 2016-02-29 | 삼성전자주식회사 | 플라즈마 처리 장치 및 기판 처리 방법 |
JP6525567B2 (ja) * | 2014-12-02 | 2019-06-05 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
US9951421B2 (en) * | 2014-12-10 | 2018-04-24 | Lam Research Corporation | Inlet for effective mixing and purging |
US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
JP5916909B1 (ja) * | 2015-02-06 | 2016-05-11 | 株式会社日立国際電気 | 基板処理装置、ガス整流部、半導体装置の製造方法およびプログラム |
US9966270B2 (en) * | 2015-03-31 | 2018-05-08 | Lam Research Corporation | Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity |
US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
US9837286B2 (en) | 2015-09-04 | 2017-12-05 | Lam Research Corporation | Systems and methods for selectively etching tungsten in a downstream reactor |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
US9758868B1 (en) | 2016-03-10 | 2017-09-12 | Lam Research Corporation | Plasma suppression behind a showerhead through the use of increased pressure |
WO2017165016A1 (en) * | 2016-03-25 | 2017-09-28 | Applied Materials, Inc. | Chamber liner for high temperature processing |
US10304668B2 (en) * | 2016-05-24 | 2019-05-28 | Tokyo Electron Limited | Localized process control using a plasma system |
US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
KR102553629B1 (ko) * | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
KR101872338B1 (ko) * | 2016-09-28 | 2018-07-02 | 주식회사 월덱스 | 사파이어 소재를 이용한 고수명 이체형 가스분사장치 제조방법 |
FR3058162B1 (fr) * | 2016-11-02 | 2021-01-01 | Commissariat Energie Atomique | Procede de depot de films minces de chalcogenure |
JP7002268B2 (ja) * | 2017-09-28 | 2022-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11670490B2 (en) * | 2017-09-29 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit fabrication system with adjustable gas injector |
US11077410B2 (en) * | 2017-10-09 | 2021-08-03 | Applied Materials, Inc. | Gas injector with baffle |
US10818479B2 (en) * | 2017-11-12 | 2020-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grounding cap module, gas injection device and etching apparatus |
US10840066B2 (en) * | 2018-06-13 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable fastening device for plasma gas injectors |
KR102601581B1 (ko) * | 2018-10-31 | 2023-11-14 | 삼성전자주식회사 | 플라즈마 챔버의 가스 공급 장치 및 이를 적용한 플라즈마 처리 장치 |
CN111328174A (zh) * | 2018-12-17 | 2020-06-23 | 北京北方华创微电子装备有限公司 | 反应腔室及等离子体产生方法 |
CN111383888B (zh) * | 2018-12-27 | 2022-03-11 | 江苏鲁汶仪器有限公司 | 等离子体刻蚀机 |
CN111613508A (zh) * | 2019-02-25 | 2020-09-01 | 北京北方华创微电子装备有限公司 | 进气装置及反应腔室 |
US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
US10553403B1 (en) * | 2019-05-08 | 2020-02-04 | Mks Instruments, Inc. | Polygonal toroidal plasma source |
WO2021011950A1 (en) | 2019-07-17 | 2021-01-21 | Lam Research Corporation | Modulation of oxidation profile for substrate processing |
KR20210048408A (ko) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 증착 반응기 매니폴드 |
CN112713073B (zh) * | 2019-10-24 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种耐腐蚀气体输送部件及其等离子体处理装置 |
US20220392753A1 (en) * | 2019-11-05 | 2022-12-08 | Lam Research Corporation | Single crystal metal oxide plasma chamber component |
KR102225604B1 (ko) * | 2019-12-18 | 2021-03-10 | 피에스케이 주식회사 | 기판 처리 장치 |
JP7313269B2 (ja) * | 2019-12-23 | 2023-07-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11854839B2 (en) | 2020-04-15 | 2023-12-26 | Mks Instruments, Inc. | Valve apparatuses and related methods for reactive process gas isolation and facilitating purge during isolation |
TWI767244B (zh) * | 2020-05-29 | 2022-06-11 | 朗曦科技股份有限公司 | 半導體製程腔體之氣體噴頭 |
KR20220019359A (ko) * | 2020-08-10 | 2022-02-17 | 주성엔지니어링(주) | 가스분배유닛을 이용한 가스공급방법 |
KR20220021206A (ko) * | 2020-08-13 | 2022-02-22 | 삼성전자주식회사 | 플라즈마 처리 장치 |
CN114121582B (zh) * | 2020-08-27 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其工作方法 |
JP7543176B2 (ja) | 2021-03-08 | 2024-09-02 | 株式会社アルバック | プラズマ処理装置およびそのメンテナンス方法 |
KR20220131680A (ko) | 2021-03-22 | 2022-09-29 | 세메스 주식회사 | 기판 처리 장치 |
AU2022246797A1 (en) | 2021-03-31 | 2023-10-05 | 6K Inc. | Systems and methods for additive manufacturing of metal nitride ceramics |
CN113871283B (zh) * | 2021-09-28 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其工艺腔室 |
KR20230116436A (ko) | 2022-01-28 | 2023-08-04 | 주식회사 유진테크 | 기판 처리 장치 및 기판 처리 방법 |
US20230377848A1 (en) * | 2022-05-23 | 2023-11-23 | 6K Inc. | Microwave plasma apparatus and methods for processing materials using an interior liner |
CN114698218A (zh) * | 2022-05-30 | 2022-07-01 | 中国空气动力研究与发展中心超高速空气动力研究所 | 瞬态等离子体电子密度分布的七通道微波干涉仪测量方法 |
US12040162B2 (en) | 2022-06-09 | 2024-07-16 | 6K Inc. | Plasma apparatus and methods for processing feed material utilizing an upstream swirl module and composite gas flows |
US12094688B2 (en) | 2022-08-25 | 2024-09-17 | 6K Inc. | Plasma apparatus and methods for processing feed material utilizing a powder ingress preventor (PIP) |
CN115537765B (zh) * | 2022-09-27 | 2024-07-12 | 盛吉盛(宁波)半导体科技有限公司 | 等离子体化学气相沉积装置和小尺寸沟槽填充方法 |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US572771A (en) * | 1896-12-08 | Automatic machine-gun | ||
JPS51144183A (en) | 1975-06-06 | 1976-12-10 | Hitachi Ltd | Semiconductor element containing surface protection film |
DE2608417C3 (de) | 1976-03-01 | 1981-02-12 | Degussa Ag, 6000 Frankfurt | Verfahren und vorrichtung zur herstellung von russ |
US4270999A (en) * | 1979-09-28 | 1981-06-02 | International Business Machines Corporation | Method and apparatus for gas feed control in a dry etching process |
JPS59150417A (ja) * | 1983-02-08 | 1984-08-28 | Toshiba Corp | 気相成長方法およびその装置 |
US4691662A (en) | 1983-02-28 | 1987-09-08 | Michigan State University | Dual plasma microwave apparatus and method for treating a surface |
JPS61100935A (ja) * | 1984-10-23 | 1986-05-19 | Fujitsu Ltd | ドライエツチング装置 |
US4614639A (en) | 1985-04-26 | 1986-09-30 | Tegal Corporation | Compound flow plasma reactor |
US4612077A (en) | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
US5160543A (en) | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US4992301A (en) | 1987-09-22 | 1991-02-12 | Nec Corporation | Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness |
US4980204A (en) * | 1987-11-27 | 1990-12-25 | Fujitsu Limited | Metal organic chemical vapor deposition method with controlled gas flow rate |
US4996077A (en) | 1988-10-07 | 1991-02-26 | Texas Instruments Incorporated | Distributed ECR remote plasma processing and apparatus |
US4943345A (en) | 1989-03-23 | 1990-07-24 | Board Of Trustees Operating Michigan State University | Plasma reactor apparatus and method for treating a substrate |
US4980240A (en) | 1989-04-20 | 1990-12-25 | Honeywell Inc. | Surface etched shadow mask |
US5104634A (en) | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US5164040A (en) | 1989-08-21 | 1992-11-17 | Martin Marietta Energy Systems, Inc. | Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets |
JPH04355917A (ja) | 1990-10-12 | 1992-12-09 | Seiko Epson Corp | 半導体装置の製造装置 |
US5252132A (en) | 1990-11-22 | 1993-10-12 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for producing semiconductor film |
JP2839720B2 (ja) | 1990-12-19 | 1998-12-16 | 株式会社東芝 | 熱処理装置 |
JPH05315290A (ja) * | 1992-05-12 | 1993-11-26 | Fujitsu Ltd | ガス流量制御装置 |
US5531834A (en) | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
US5614055A (en) | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5529657A (en) * | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
US5525159A (en) | 1993-12-17 | 1996-06-11 | Tokyo Electron Limited | Plasma process apparatus |
US5680013A (en) | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
US5589002A (en) | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
US5522934A (en) | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
US5425810A (en) | 1994-05-11 | 1995-06-20 | Internation Business Machines Corporation | Removable gas injectors for use in chemical vapor deposition of aluminium oxide |
GB9410567D0 (en) * | 1994-05-26 | 1994-07-13 | Philips Electronics Uk Ltd | Plasma treatment and apparatus in electronic device manufacture |
US5540800A (en) | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
US5580385A (en) | 1994-06-30 | 1996-12-03 | Texas Instruments, Incorporated | Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber |
US5746875A (en) | 1994-09-16 | 1998-05-05 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US5643394A (en) | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
JP3699142B2 (ja) * | 1994-09-30 | 2005-09-28 | アネルバ株式会社 | 薄膜形成装置 |
TW285746B (xx) | 1994-10-26 | 1996-09-11 | Matsushita Electric Ind Co Ltd | |
DE4440323A1 (de) | 1994-11-11 | 1996-05-15 | Sulzer Metco Ag | Düse für einen Brennerkopf eines Plasmaspritzgeräts |
JPH08158072A (ja) * | 1994-12-02 | 1996-06-18 | Nippon Soken Inc | ドライエッチング装置 |
US5685942A (en) | 1994-12-05 | 1997-11-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
JPH0945624A (ja) * | 1995-07-27 | 1997-02-14 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
JP3150056B2 (ja) | 1995-10-19 | 2001-03-26 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5792269A (en) | 1995-10-31 | 1998-08-11 | Applied Materials, Inc. | Gas distribution for CVD systems |
US5772771A (en) | 1995-12-13 | 1998-06-30 | Applied Materials, Inc. | Deposition chamber for improved deposition thickness uniformity |
US5792569A (en) * | 1996-03-19 | 1998-08-11 | International Business Machines Corporation | Magnetic devices and sensors based on perovskite manganese oxide materials |
US6070551A (en) | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
US6013155A (en) | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US5885358A (en) | 1996-07-09 | 1999-03-23 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US6170428B1 (en) | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
JP3220394B2 (ja) | 1996-09-27 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
TW415970B (en) | 1997-01-08 | 2000-12-21 | Ebara Corp | Vapor-phase film growth apparatus and gas ejection head |
US6077357A (en) | 1997-05-29 | 2000-06-20 | Applied Materials, Inc. | Orientless wafer processing on an electrostatic chuck |
US6042687A (en) | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
TW416100B (en) | 1997-07-02 | 2000-12-21 | Applied Materials Inc | Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system |
US6007330A (en) | 1998-03-12 | 1999-12-28 | Cosmos Factory, Inc. | Liquid precursor delivery system |
US6294466B1 (en) | 1998-05-01 | 2001-09-25 | Applied Materials, Inc. | HDP-CVD apparatus and process for depositing titanium films for semiconductor devices |
US6143078A (en) * | 1998-11-13 | 2000-11-07 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
US6230651B1 (en) | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
US6263829B1 (en) | 1999-01-22 | 2001-07-24 | Applied Materials, Inc. | Process chamber having improved gas distributor and method of manufacture |
US6052176A (en) * | 1999-03-31 | 2000-04-18 | Lam Research Corporation | Processing chamber with optical window cleaned using process gas |
US6257168B1 (en) | 1999-06-30 | 2001-07-10 | Lam Research Corporation | Elevated stationary uniformity ring design |
US6287643B1 (en) * | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
US20030155079A1 (en) * | 1999-11-15 | 2003-08-21 | Andrew D. Bailey | Plasma processing system with dynamic gas distribution control |
US6486069B1 (en) | 1999-12-03 | 2002-11-26 | Tegal Corporation | Cobalt silicide etch process and apparatus |
US6450117B1 (en) * | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
US6403491B1 (en) | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
KR100607991B1 (ko) * | 2004-07-07 | 2006-08-02 | 삼성전자주식회사 | 화상제어장치용 광센서의 광량편차보정방법 및 인쇄기의화상제어장치 |
-
2001
- 2001-12-21 US US10/024,208 patent/US20030070620A1/en not_active Abandoned
-
2002
- 2002-10-09 DE DE60219343T patent/DE60219343T2/de not_active Expired - Lifetime
- 2002-10-09 KR KR1020047005429A patent/KR100954709B1/ko active IP Right Grant
- 2002-10-09 CN CNA028236130A patent/CN1639831A/zh active Pending
- 2002-10-09 EP EP02801663A patent/EP1444717B1/en not_active Expired - Lifetime
- 2002-10-09 IL IL16129702A patent/IL161297A0/xx active IP Right Grant
- 2002-10-09 AT AT02801663T patent/ATE358887T1/de not_active IP Right Cessation
- 2002-10-09 AU AU2002356543A patent/AU2002356543A1/en not_active Abandoned
- 2002-10-09 WO PCT/US2002/032057 patent/WO2003034463A2/en active IP Right Grant
- 2002-10-09 JP JP2003537097A patent/JP5043288B2/ja not_active Expired - Lifetime
- 2002-10-09 CN CN2008101701889A patent/CN101414537B/zh not_active Expired - Lifetime
- 2002-10-15 TW TW091123681A patent/TW589658B/zh not_active IP Right Cessation
-
2004
- 2004-04-04 IL IL161297A patent/IL161297A/en not_active IP Right Cessation
-
2009
- 2009-10-23 US US12/605,027 patent/US9051647B2/en active Active
-
2010
- 2010-08-09 JP JP2010178983A patent/JP5364054B2/ja not_active Expired - Lifetime
-
2015
- 2015-05-04 US US14/703,066 patent/US10403475B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20100041238A1 (en) | 2010-02-18 |
DE60219343T2 (de) | 2007-12-13 |
AU2002356543A1 (en) | 2003-04-28 |
US9051647B2 (en) | 2015-06-09 |
TW589658B (en) | 2004-06-01 |
WO2003034463A3 (en) | 2003-06-19 |
JP5043288B2 (ja) | 2012-10-10 |
KR100954709B1 (ko) | 2010-04-23 |
WO2003034463A2 (en) | 2003-04-24 |
DE60219343D1 (de) | 2007-05-16 |
ATE358887T1 (de) | 2007-04-15 |
JP5364054B2 (ja) | 2013-12-11 |
US10403475B2 (en) | 2019-09-03 |
CN101414537A (zh) | 2009-04-22 |
KR20050034610A (ko) | 2005-04-14 |
IL161297A (en) | 2008-03-20 |
JP2005507159A (ja) | 2005-03-10 |
US20150235811A1 (en) | 2015-08-20 |
CN1639831A (zh) | 2005-07-13 |
JP2011029645A (ja) | 2011-02-10 |
CN101414537B (zh) | 2011-11-09 |
EP1444717A2 (en) | 2004-08-11 |
EP1444717B1 (en) | 2007-04-04 |
US20030070620A1 (en) | 2003-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL161297A0 (en) | Tunable multi-zone gas injection system | |
KR102581543B1 (ko) | 균일성 베플들을 포함하는 반도체 기판 프로세싱 장치 | |
US20200149166A1 (en) | Flow control features of cvd chambers | |
US10322384B2 (en) | Counter flow mixer for process chamber | |
KR100782369B1 (ko) | 반도체 제조장치 | |
US5453124A (en) | Programmable multizone gas injector for single-wafer semiconductor processing equipment | |
US20120097330A1 (en) | Dual delivery chamber design | |
US6015591A (en) | Deposition method | |
EP0550058B1 (en) | A programmable multizone gas injector for single-wafer semiconductor processing equipment | |
US7622005B2 (en) | Uniformity control for low flow process and chamber to chamber matching | |
KR20180063819A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
US20130269612A1 (en) | Gas Treatment Apparatus with Surrounding Spray Curtains | |
KR20160137403A (ko) | 에지 플레넘 샤워헤드 어셈블리를 포함한 증착 장치 | |
KR20150002543A (ko) | 가스 시일을 갖는 화학적 증착 챔버 | |
KR100646017B1 (ko) | 가스 분리형의 다수의 공동 전극을 이용한 샤워헤드 | |
WO2005111267A3 (en) | Gas distribution member supplying process gas and rf power for plasma processing | |
WO2002031858A3 (en) | Gas distribution apparatus for semiconductor processing | |
AU6803900A (en) | Method and apparatus for providing uniform gas delivery to substrates in cvd and pecvd processes | |
KR20140057136A (ko) | 가스 커튼을 구비한 가스 샤워 장치 및 이를 이용한 박막 증착을 위한 기구 | |
JP2004502318A5 (xx) | ||
TW201502310A (zh) | 用於遠距電漿原子層沉積之系統及方法 | |
US9328419B2 (en) | Gas treatment apparatus with surrounding spray curtains | |
TW201618154A (zh) | 氣體輸送裝置及電漿處理裝置 | |
KR20200050041A (ko) | 플라즈마 챔버의 가스 공급 장치 및 이를 적용한 플라즈마 처리 장치 | |
KR20040014760A (ko) | 멀티 홀 앵글드 가스분사 시스템을 갖는 반도체소자제조장치 및 이를 이용한 반도체소자 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed |