HUP0302668A2 - Eljárás volfrám egykristály előállítására - Google Patents

Eljárás volfrám egykristály előállítására

Info

Publication number
HUP0302668A2
HUP0302668A2 HU0302668A HUP0302668A HUP0302668A2 HU P0302668 A2 HUP0302668 A2 HU P0302668A2 HU 0302668 A HU0302668 A HU 0302668A HU P0302668 A HUP0302668 A HU P0302668A HU P0302668 A2 HUP0302668 A2 HU P0302668A2
Authority
HU
Hungary
Prior art keywords
single crystal
tungsten
carbonates
oxides
metal oxides
Prior art date
Application number
HU0302668A
Other languages
English (en)
Hungarian (hu)
Inventor
Seiji Kobayashi
Kazutomi Yamamoto
Original Assignee
Furukawa Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Co., Ltd. filed Critical Furukawa Co., Ltd.
Publication of HUP0302668A2 publication Critical patent/HUP0302668A2/hu

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measurement Of Radiation (AREA)
HU0302668A 2001-07-12 2002-06-28 Eljárás volfrám egykristály előállítására HUP0302668A2 (hu)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001212336 2001-07-12
PCT/JP2002/006607 WO2003008676A1 (fr) 2001-07-12 2002-06-28 Procede pour preparer un monocristal de tungstate

Publications (1)

Publication Number Publication Date
HUP0302668A2 true HUP0302668A2 (hu) 2003-12-29

Family

ID=19047514

Family Applications (1)

Application Number Title Priority Date Filing Date
HU0302668A HUP0302668A2 (hu) 2001-07-12 2002-06-28 Eljárás volfrám egykristály előállítására

Country Status (6)

Country Link
JP (1) JP4037362B2 (cs)
CN (1) CN1274887C (cs)
CZ (1) CZ300221B6 (cs)
HU (1) HUP0302668A2 (cs)
RU (1) RU2241081C2 (cs)
WO (1) WO2003008676A1 (cs)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4639711B2 (ja) * 2004-09-15 2011-02-23 日立化成工業株式会社 無機シンチレータ及びその製造方法
CN100395380C (zh) * 2006-04-21 2008-06-18 北京工业大学 提高稀土离子掺杂浓度的钨酸钡单晶制备工艺
CN100364896C (zh) * 2006-08-17 2008-01-30 同济大学 一种钨酸汞的制备方法
CN100398701C (zh) * 2006-09-15 2008-07-02 嘉兴学院 晶体生长原料处理方法
CN104671285B (zh) * 2015-01-28 2016-08-03 洛阳理工学院 一种钼酸镉纳米棒的制备方法
CN106007713A (zh) * 2016-07-08 2016-10-12 天津大学 一种高品质因数钨酸钙系微波介质陶瓷
CN115537912B (zh) * 2022-10-24 2024-08-13 福建福晶科技股份有限公司 一种消除晶体体发热的kgw晶体制备方法及得到的晶体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100999A (en) * 1980-12-15 1982-06-23 Hitachi Chem Co Ltd Heat treatment of single crystal of tungstic acid compound
JPS60103100A (ja) * 1983-11-08 1985-06-07 Toshiba Corp シンチレ−タ単結晶の熱処理方法
CN1043479C (zh) * 1994-12-30 1999-05-26 中国科学院上海硅酸盐研究所 坩埚下降生长钨酸铅闪烁大单晶的制备方法
JPH10291898A (ja) * 1997-04-22 1998-11-04 Furukawa Co Ltd タングステン酸鉛単結晶

Also Published As

Publication number Publication date
RU2241081C2 (ru) 2004-11-27
CN1464920A (zh) 2003-12-31
CZ300221B6 (cs) 2009-03-18
JP4037362B2 (ja) 2008-01-23
JPWO2003008676A1 (ja) 2004-11-11
CN1274887C (zh) 2006-09-13
WO2003008676A1 (fr) 2003-01-30

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Legal Events

Date Code Title Description
FD9A Lapse of provisional protection due to non-payment of fees