HK28396A - Non-volatile memory - Google Patents

Non-volatile memory

Info

Publication number
HK28396A
HK28396A HK28396A HK28396A HK28396A HK 28396 A HK28396 A HK 28396A HK 28396 A HK28396 A HK 28396A HK 28396 A HK28396 A HK 28396A HK 28396 A HK28396 A HK 28396A
Authority
HK
Hong Kong
Prior art keywords
volatile memory
volatile
memory
Prior art date
Application number
HK28396A
Other languages
English (en)
Inventor
Naoki Mitsuishi
Yoh Takamori
Kiyoshi Matsubara
Yoshiyuki Ozawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5880887A external-priority patent/JP2833621B2/ja
Priority claimed from JP62139402A external-priority patent/JPS63303447A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK28396A publication Critical patent/HK28396A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/14—Protection against unauthorised use of memory or access to memory
    • G06F12/1416—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights
    • G06F12/1425—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights the protection being physical, e.g. cell, word, block
    • G06F12/1433—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights the protection being physical, e.g. cell, word, block for a module or a part of a module
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
HK28396A 1987-03-16 1996-02-15 Non-volatile memory HK28396A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5880887A JP2833621B2 (ja) 1987-03-16 1987-03-16 不揮発性記憶装置
JP62139402A JPS63303447A (ja) 1987-06-03 1987-06-03 半導体集積回路装置

Publications (1)

Publication Number Publication Date
HK28396A true HK28396A (en) 1996-02-23

Family

ID=26399812

Family Applications (1)

Application Number Title Priority Date Filing Date
HK28396A HK28396A (en) 1987-03-16 1996-02-15 Non-volatile memory

Country Status (5)

Country Link
US (2) US4931997A (xx)
EP (2) EP0283238B1 (xx)
KR (1) KR950014560B1 (xx)
DE (2) DE3856216T2 (xx)
HK (1) HK28396A (xx)

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US8036032B2 (en) 2007-12-31 2011-10-11 Cypress Semiconductor Corporation 5T high density NVDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
JP2009181624A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 不揮発性半導体記憶装置
WO2011037257A1 (ja) * 2009-09-28 2011-03-31 日立ビークルエナジー株式会社 電池システム
KR101015108B1 (ko) * 2010-07-28 2011-02-21 김인휘 무전원 방식의 휴대용 정수기
KR101934433B1 (ko) 2012-05-31 2019-01-02 에스케이하이닉스 주식회사 블럭 보호가 가능한 반도체 장치
KR101991905B1 (ko) 2012-07-19 2019-06-24 삼성전자주식회사 불휘발성 메모리, 불휘발성 메모리의 읽기 방법 및 불휘발성 메모리를 포함하는 메모리 시스템
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Also Published As

Publication number Publication date
EP0283238B1 (en) 1995-01-25
KR890001098A (ko) 1989-03-18
US5084843A (en) 1992-01-28
DE3852833T2 (de) 1995-06-22
EP0283238A2 (en) 1988-09-21
KR950014560B1 (ko) 1995-12-05
EP0579274A2 (en) 1994-01-19
EP0283238A3 (en) 1990-11-28
US4931997A (en) 1990-06-05
EP0579274A3 (en) 1995-09-20
DE3856216D1 (de) 1998-08-13
EP0579274B1 (en) 1998-07-08
DE3852833D1 (de) 1995-03-09
DE3856216T2 (de) 1999-04-08

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Legal Events

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