HK1204142A1 - Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer - Google Patents

Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer

Info

Publication number
HK1204142A1
HK1204142A1 HK15104400.9A HK15104400A HK1204142A1 HK 1204142 A1 HK1204142 A1 HK 1204142A1 HK 15104400 A HK15104400 A HK 15104400A HK 1204142 A1 HK1204142 A1 HK 1204142A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
manufacturing
dopant
semiconductor
injection layer
Prior art date
Application number
HK15104400.9A
Other languages
English (en)
Chinese (zh)
Inventor
今村哲也
富澤由香
池田吉紀
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Publication of HK1204142A1 publication Critical patent/HK1204142A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
HK15104400.9A 2012-03-30 2015-05-11 Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer HK1204142A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012078902 2012-03-30
JP2012232206 2012-10-19
JP2013004670 2013-01-15
PCT/JP2013/059629 WO2013147202A1 (ja) 2012-03-30 2013-03-29 半導体積層体及びその製造方法、半導体デバイスの製造方法、半導体デバイス、ドーパント組成物、ドーパント注入層、並びにドープ層の形成方法

Publications (1)

Publication Number Publication Date
HK1204142A1 true HK1204142A1 (en) 2015-11-06

Family

ID=49260443

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15104400.9A HK1204142A1 (en) 2012-03-30 2015-05-11 Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer

Country Status (8)

Country Link
US (1) US20150053263A1 (de)
EP (1) EP2833391A4 (de)
JP (1) JP5818972B2 (de)
KR (1) KR20140142690A (de)
CN (3) CN104205293B (de)
HK (1) HK1204142A1 (de)
TW (1) TWI556440B (de)
WO (1) WO2013147202A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10446629B2 (en) 2011-10-14 2019-10-15 Diftek Lasers, Inc. Electronic device and method of making thereof
US9859348B2 (en) 2011-10-14 2018-01-02 Diftek Lasers, Inc. Electronic device and method of making thereof
EP3092665B1 (de) 2014-01-08 2019-03-27 Lumileds Holding B.V. Wellenlängenumgewandeltes lichtemittierendes halbleiterbauelement
CN106663701A (zh) * 2014-08-29 2017-05-10 帝人株式会社 半导体器件的制造方法以及半导体器件
CN104617164A (zh) * 2015-02-11 2015-05-13 苏州金瑞晨科技有限公司 纳米硅硼浆及其应用于制备太阳能电池的方法
JP6647621B2 (ja) * 2015-02-25 2020-02-14 国立大学法人九州大学 不純物導入装置、不純物導入方法及び半導体素子の製造方法
EP3244453A1 (de) * 2015-10-09 2017-11-15 Diftek Lasers, Inc. Elektronische vorrichtung und verfahren zur herstellung davon
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
KR20180085888A (ko) * 2017-01-20 2018-07-30 엘지전자 주식회사 이종 접합 태양전지 및 이의 제조 방법
DE102017118975B4 (de) * 2017-08-18 2023-07-27 Infineon Technologies Ag Halbleitervorrichtung mit einem cz-halbleiterkörper und verfahren zum herstellen einer halbleitervorrichtung mit einem cz-halbleiterkörper
US10332985B2 (en) * 2017-08-31 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
GB2566477A (en) 2017-09-14 2019-03-20 Nat Univ Ireland Galway Method of processing a target material

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
JPS59112617A (ja) * 1982-12-20 1984-06-29 Fujitsu Ltd 半導体装置のレ−ザアニ−ル方法
JPH02163935A (ja) 1988-12-16 1990-06-25 Fujitsu Ltd 半導体装置の製造方法
CA2008379C (en) * 1989-01-24 1993-08-31 Hajime Sakiyama Semiconductor lasers
JP4518222B2 (ja) * 2000-03-13 2010-08-04 Ｊｓｒ株式会社 シリルシクロペンタシランおよびその用途
US6355544B1 (en) * 2000-07-20 2002-03-12 National Semiconductor Corporation Selective high concentration doping of semiconductor material utilizing laser annealing
US20040025932A1 (en) * 2002-08-12 2004-02-12 John Husher Variegated, high efficiency solar cell and method for making same
JP2004204094A (ja) * 2002-12-26 2004-07-22 Jsr Corp シリコン膜形成用組成物およびシリコン膜の形成方法
JP4016419B2 (ja) * 2002-08-23 2007-12-05 Ｊｓｒ株式会社 シリコン膜形成用組成物およびシリコン膜の形成方法
EP1551057B1 (de) * 2002-08-23 2009-07-08 JSR Corporation Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms
JP4401667B2 (ja) * 2003-03-26 2010-01-20 株式会社 液晶先端技術開発センター アニール用薄膜半導体構造体、薄膜半導体用アニール方法、薄膜半導体装置、薄膜半導体装置製造方法、および表示装置。
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
JP4501379B2 (ja) * 2003-09-02 2010-07-14 Ｊｓｒ株式会社 ルテニウム−シリコン混合膜を形成する方法
JP2005150609A (ja) 2003-11-19 2005-06-09 Sharp Corp 太陽電池の製造方法
JP2005228792A (ja) * 2004-02-10 2005-08-25 Seiko Epson Corp ドープシリコン膜の形成方法及びデバイスの製造方法
FR2870988B1 (fr) * 2004-06-01 2006-08-11 Michel Bruel Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
JP2006080450A (ja) 2004-09-13 2006-03-23 Sharp Corp 太陽電池の製造方法
KR20060100602A (ko) 2005-03-17 2006-09-21 삼성전자주식회사 폴리실리콘 박막 트랜지스터의 제조 방법 및 그에 의해제조된 폴리실리콘 박막 트랜지스터를 포함하는 액정 표시장치
JP4901300B2 (ja) * 2006-05-19 2012-03-21 新電元工業株式会社 半導体装置の製造方法
EP2087529A2 (de) * 2006-11-15 2009-08-12 Innovalight, Inc. Verfahren zur herstellung eines verdichteten nanopartikel-dünnfilms mit einem satz verstopfter poren
JP5710879B2 (ja) 2007-01-03 2015-04-30 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ シリコン／ゲルマニウムによるナノ粒子インク、ドーピングされた粒子、印刷法、及び半導体用途のためのプロセス
CN101675531B (zh) 2007-02-16 2013-03-06 纳克公司 太阳能电池结构、光生伏打模块及对应的工艺
JP5396698B2 (ja) * 2007-07-25 2014-01-22 セイコーエプソン株式会社 圧力センサー
JP5191209B2 (ja) * 2007-10-29 2013-05-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7704866B2 (en) 2008-03-18 2010-04-27 Innovalight, Inc. Methods for forming composite nanoparticle-metal metallization contacts on a substrate
US7923368B2 (en) * 2008-04-25 2011-04-12 Innovalight, Inc. Junction formation on wafer substrates using group IV nanoparticles
EP2283514A1 (de) * 2008-04-25 2011-02-16 Innovalight, Inc. Sperrschichtbildung auf wafersubstraten unter verwendung von gruppe-iv-nanopartikeln
JP5305431B2 (ja) * 2008-06-19 2013-10-02 国立大学法人東京農工大学 太陽光発電に用いられる半導体への不純物導入方法
KR101062668B1 (ko) * 2009-02-27 2011-09-06 성균관대학교산학협력단 레이저와 흡수층을 이용한 도핑방법
WO2010113376A1 (ja) * 2009-03-31 2010-10-07 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
JP4871973B2 (ja) * 2009-04-28 2012-02-08 株式会社沖データ 半導体薄膜素子の製造方法並びに半導体ウエハ、及び、半導体薄膜素子
JP2011258824A (ja) * 2010-06-10 2011-12-22 Fuji Xerox Co Ltd 有機結晶構造物、有機トランジスタ、及び有機結晶構造物の製造方法
JP5681402B2 (ja) 2010-07-09 2015-03-11 東京応化工業株式会社 拡散剤組成物および不純物拡散層の形成方法
KR101411726B1 (ko) * 2010-12-10 2014-06-26 데이진 가부시키가이샤 반도체 적층체, 반도체 디바이스, 및 그들의 제조 방법
JP5253561B2 (ja) * 2011-02-04 2013-07-31 帝人株式会社 半導体デバイスの製造方法、半導体デバイス、並びに分散体

Also Published As

Publication number Publication date
CN104205293A (zh) 2014-12-10
CN107039532A (zh) 2017-08-11
TW201405815A (zh) 2014-02-01
TWI556440B (zh) 2016-11-01
CN107039532B (zh) 2020-08-25
WO2013147202A1 (ja) 2013-10-03
JPWO2013147202A1 (ja) 2015-12-14
KR20140142690A (ko) 2014-12-12
CN106887384B (zh) 2018-12-14
EP2833391A1 (de) 2015-02-04
JP5818972B2 (ja) 2015-11-18
EP2833391A4 (de) 2015-04-22
US20150053263A1 (en) 2015-02-26
CN104205293B (zh) 2017-09-12
CN106887384A (zh) 2017-06-23

Similar Documents

Publication Publication Date Title
HK1204142A1 (en) Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer
SG10201610556WA (en) Insulating film, method for manufacturing semiconductor device, and semiconductor device
EP2833405A4 (de) Halbleiterbauelement und herstellungsverfahren für das halbleiterbauelement
EP2741336A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
SG10201600065TA (en) Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
EP2862212A4 (de) Schichtstruktur für oled-vorrichtung, verfahren zur herstellung davon und oled-vorrichtung damit
EP2908330A4 (de) Gruppe iii-nitridverbundsubstrat, herstellungsverfahren dafür und herstellungsverfahren für ein gruppe-iii-nitrid-halbleiterbauelement
EP2960925A4 (de) Verbundsubstrat, halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
EP2851192A4 (de) Gassperrfilm, verfahren zur herstellung des gassperrfilms und elektronische vorrichtung
EP2650908A4 (de) Halbleiterlaminat, halbleiterbauelement, verfahren zur herstellung des halbleiterlaminats und verfahren zur herstellung eines halbleiterbauelements
EP2913854A4 (de) Halbleiterbauelement und verfahren zur herstellung davon
EP2816598A4 (de) Halbleiterbauelement und verfahren zu seiner herstellung
EP2833404A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
EP2829527A4 (de) Wärmeisolatorzusammensetzung, wärmeisolator damit und verfahren zur herstellung des wärmeisolators
EP2854174A4 (de) Halbleitervorrichtung und verfahren zur herstellung davon
TWI563540B (en) Semiconductor device manufacturing method
EP2802005A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
EP2787534A4 (de) Halbleiterbauelement mit isoliertem gate und verfahren zu seiner herstellung
EP2913843A4 (de) Verfahren zur herstellung eines halbleiterbauelements
EP2860760A4 (de) Halbleiterbauelement und verfahren zur herstellung davon
SG11201401908RA (en) Resin composition, resin composition sheet, semiconductor device and method for manufacturing same
EP2717299A4 (de) Glaszusammensetzung zum schutz einer halbleiterverbindung, herstellungsverfahren für eine halbleitervorrichtung und halbleitervorrichtung
EP2843687A4 (de) Herstellungsverfahren für verbundsubstrat, verfahren zur herstellung eines halbleiterelements, verbundsubstrat und halbleiterbauelement
EP2849213A4 (de) Glaszusammensetzung zum schutz einer halbleiterverbindung, herstellungsverfahren für eine halbleitervorrichtung und halbleitervorrichtung
EP2738794A4 (de) Verfahren zur herstellung eines halbleiterbauelements und halbleiterbauelement