HK1204142A1 - 半導體層合體及其製造方法、半導體裝置的製造方法、半導體裝置、摻雜劑組合物、摻雜劑注入層和摻雜層的形成方法 - Google Patents

半導體層合體及其製造方法、半導體裝置的製造方法、半導體裝置、摻雜劑組合物、摻雜劑注入層和摻雜層的形成方法

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Publication number
HK1204142A1
HK1204142A1 HK15104400.9A HK15104400A HK1204142A1 HK 1204142 A1 HK1204142 A1 HK 1204142A1 HK 15104400 A HK15104400 A HK 15104400A HK 1204142 A1 HK1204142 A1 HK 1204142A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
manufacturing
dopant
semiconductor
injection layer
Prior art date
Application number
HK15104400.9A
Other languages
English (en)
Inventor
今村哲也
富澤由香
池田吉紀
Original Assignee
Teijin Ltd
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Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Publication of HK1204142A1 publication Critical patent/HK1204142A1/zh

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HK15104400.9A 2012-03-30 2015-05-11 半導體層合體及其製造方法、半導體裝置的製造方法、半導體裝置、摻雜劑組合物、摻雜劑注入層和摻雜層的形成方法 HK1204142A1 (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012078902 2012-03-30
JP2012232206 2012-10-19
JP2013004670 2013-01-15
PCT/JP2013/059629 WO2013147202A1 (ja) 2012-03-30 2013-03-29 半導体積層体及びその製造方法、半導体デバイスの製造方法、半導体デバイス、ドーパント組成物、ドーパント注入層、並びにドープ層の形成方法

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HK1204142A1 true HK1204142A1 (zh) 2015-11-06

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