HK1137093A1 - Exposure apparatus, exposure method and device manufacturing method - Google Patents

Exposure apparatus, exposure method and device manufacturing method

Info

Publication number
HK1137093A1
HK1137093A1 HK10104653.8A HK10104653A HK1137093A1 HK 1137093 A1 HK1137093 A1 HK 1137093A1 HK 10104653 A HK10104653 A HK 10104653A HK 1137093 A1 HK1137093 A1 HK 1137093A1
Authority
HK
Hong Kong
Prior art keywords
exposure
device manufacturing
exposure apparatus
exposure method
manufacturing
Prior art date
Application number
HK10104653.8A
Other languages
English (en)
Inventor
Yuichi Shibazaki
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1137093A1 publication Critical patent/HK1137093A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Multimedia (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
HK10104653.8A 2007-12-28 2010-05-13 Exposure apparatus, exposure method and device manufacturing method HK1137093A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007340641 2007-12-28
JP2007340460 2007-12-28
JP2008110766 2008-04-21
JP2008303735 2008-11-28
PCT/JP2008/004044 WO2009084244A1 (ja) 2007-12-28 2008-12-29 露光装置、移動体駆動システム、パターン形成装置、及び露光方法、並びにデバイス製造方法

Publications (1)

Publication Number Publication Date
HK1137093A1 true HK1137093A1 (en) 2010-07-16

Family

ID=40823980

Family Applications (4)

Application Number Title Priority Date Filing Date
HK10104653.8A HK1137093A1 (en) 2007-12-28 2010-05-13 Exposure apparatus, exposure method and device manufacturing method
HK12110452.6A HK1169716A1 (en) 2007-12-28 2012-10-19 Exposure apparatus, moving body driving system, pattern forming apparatus, and exposure method
HK12110446.5A HK1169861A1 (en) 2007-12-28 2012-10-19 Exposure apparatus, exposure method and device manufacturing method
HK14112391.4A HK1199108A1 (zh) 2007-12-28 2014-12-09 曝光裝置、曝光方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
HK12110452.6A HK1169716A1 (en) 2007-12-28 2012-10-19 Exposure apparatus, moving body driving system, pattern forming apparatus, and exposure method
HK12110446.5A HK1169861A1 (en) 2007-12-28 2012-10-19 Exposure apparatus, exposure method and device manufacturing method
HK14112391.4A HK1199108A1 (zh) 2007-12-28 2014-12-09 曝光裝置、曝光方法

Country Status (7)

Country Link
US (5) US9229333B2 (ja)
JP (12) JP5088588B2 (ja)
KR (3) KR101477833B1 (ja)
CN (4) CN102540767B (ja)
HK (4) HK1137093A1 (ja)
TW (7) TWI454851B (ja)
WO (1) WO2009084244A1 (ja)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101634893B1 (ko) 2006-08-31 2016-06-29 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI655517B (zh) 2006-08-31 2019-04-01 日商尼康股份有限公司 Exposure apparatus and method, and component manufacturing method
KR101711323B1 (ko) 2006-08-31 2017-02-28 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101660667B1 (ko) 2006-09-01 2016-09-27 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 디바이스 제조 방법, 그리고 캘리브레이션 방법
EP2993523B1 (en) 2006-09-01 2017-08-30 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
TWI454851B (zh) 2007-12-28 2014-10-01 尼康股份有限公司 An exposure apparatus, a moving body driving system, a pattern forming apparatus, and an exposure method, and an element manufacturing method
US8493547B2 (en) * 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8514395B2 (en) * 2009-08-25 2013-08-20 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
JP2011168028A (ja) * 2010-02-22 2011-09-01 Ricoh Co Ltd 画像形成装置
CN102608861A (zh) * 2011-01-19 2012-07-25 上海华虹Nec电子有限公司 一种改善硅片周边光刻胶形貌的方法
CN102540896B (zh) * 2012-02-29 2013-07-17 清华大学 化学机械抛光传输机器人的非线性模糊结合递归控制系统
CN102591205B (zh) * 2012-02-29 2013-07-31 清华大学 化学机械抛光传输机器人的递归优化控制系统
US9575416B2 (en) 2012-08-23 2017-02-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and displacement measurement system
US9958424B2 (en) * 2012-10-01 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of identifying airborne molecular contamination source
CN108983554A (zh) 2012-10-02 2018-12-11 株式会社尼康 曝光装置以及器件制造方法
US9772564B2 (en) * 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
KR102080875B1 (ko) * 2013-01-23 2020-04-16 삼성디스플레이 주식회사 스테이지 이송 장치 및 이를 이용한 스테이지 위치 측정 방법
CN104111596A (zh) * 2013-04-16 2014-10-22 上海微电子装备有限公司 用于光刻设备的全局调平的装置和方法
JP2014216631A (ja) * 2013-04-30 2014-11-17 キヤノン株式会社 描画装置、及び物品の製造方法
JP6193611B2 (ja) * 2013-04-30 2017-09-06 キヤノン株式会社 描画装置、及び物品の製造方法
CN111158220A (zh) 2015-02-23 2020-05-15 株式会社尼康 测量装置及方法、光刻系统、曝光装置及方法
EP3742109A1 (en) 2015-02-23 2020-11-25 Nikon Corporation Measurement device, lithography system and exposure apparatus, and device manufacturing method
CN111610696A (zh) * 2015-02-23 2020-09-01 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
CN105045042B (zh) * 2015-04-23 2017-06-16 清华大学 一种硅片台曝光区域六自由度位移测量方法
CN111812949A (zh) * 2015-09-30 2020-10-23 株式会社尼康 曝光装置及曝光方法、以及平面显示器制造方法
KR20180059814A (ko) * 2015-09-30 2018-06-05 가부시키가이샤 니콘 노광 장치, 플랫 패널 디스플레이의 제조 방법, 및 디바이스 제조 방법
CN205427436U (zh) * 2016-03-23 2016-08-03 北京京东方光电科技有限公司 显示器件的对位检测设备及曝光工艺系统
US11099490B2 (en) * 2016-07-07 2021-08-24 Asml Netherlands B.V. Inspection substrate and an inspection method
TWI604290B (zh) * 2016-10-31 2017-11-01 智泰科技股份有限公司 具有空間位置誤差補償的數值控制工具機
JP6909021B2 (ja) * 2017-03-07 2021-07-28 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP6945316B2 (ja) * 2017-03-24 2021-10-06 キヤノン株式会社 検出装置、パターン形成装置、取得方法、検出方法、および物品製造方法
CN106950801A (zh) * 2017-04-16 2017-07-14 合肥芯碁微电子装备有限公司 一种无掩膜激光直写光刻设备的快速边缘曝光方法
US10522557B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Surface topography by forming spacer-like components
CN109957504B (zh) * 2017-12-14 2022-08-02 长春长光华大智造测序设备有限公司 便于初始对准的高通量基因测序仪硅片及初始对准方法
KR20190092906A (ko) 2018-01-31 2019-08-08 김믿음 칼날 배수구망
US10591815B2 (en) * 2018-06-28 2020-03-17 Applied Materials, Inc. Shifting of patterns to reduce line waviness
NL2023546A (en) * 2018-08-23 2020-02-27 Asml Netherlands Bv Stage apparatus and method for calibrating an object loading process
JP7278138B2 (ja) * 2019-04-18 2023-05-19 キヤノン株式会社 基板処理装置、物品製造方法、基板処理方法、基板処理システム、管理装置、およびプログラム
US11764111B2 (en) * 2019-10-24 2023-09-19 Texas Instruments Incorporated Reducing cross-wafer variability for minimum width resistors
JP2023000112A (ja) * 2021-06-17 2023-01-04 キオクシア株式会社 計測装置および計測プログラム
CN113506746B (zh) * 2021-06-28 2024-03-19 华虹半导体(无锡)有限公司 解决超级结工艺打标区域高台阶差的方法
WO2024003608A1 (en) * 2022-06-26 2024-01-04 Nova Ltd Moving apparatus along multiple axes

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPH0545886A (ja) * 1991-08-12 1993-02-26 Nikon Corp 角形基板の露光装置
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JPH07270122A (ja) * 1994-03-30 1995-10-20 Canon Inc 変位検出装置、該変位検出装置を備えた露光装置およびデバイスの製造方法
JPH07335529A (ja) * 1994-06-09 1995-12-22 Nikon Corp 投影露光装置
US5715064A (en) 1994-06-17 1998-02-03 International Business Machines Corporation Step and repeat apparatus having enhanced accuracy and increased throughput
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
JP3237522B2 (ja) * 1996-02-05 2001-12-10 ウシオ電機株式会社 ウエハ周辺露光方法および装置
JP4029180B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1144263C (zh) 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
USRE40043E1 (en) 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
KR100841147B1 (ko) 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
JP2000068192A (ja) 1998-08-18 2000-03-03 Nikon Corp 露光装置、露光方法及び位置検出方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
TWI223734B (en) * 1999-12-21 2004-11-11 Asml Netherlands Bv Crash prevention in positioning apparatus for use in lithographic projection apparatus
US6771350B2 (en) 2000-02-25 2004-08-03 Nikon Corporation Exposure apparatus and exposure method capable of controlling illumination distribution
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US7561270B2 (en) * 2000-08-24 2009-07-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
WO2002019401A1 (fr) * 2000-08-29 2002-03-07 Nikon Corporation Procede et dispositif d'exposition
EP1364257A1 (en) 2001-02-27 2003-11-26 ASML US, Inc. Simultaneous imaging of two reticles
JP2002280283A (ja) * 2001-03-16 2002-09-27 Canon Inc 基板処理装置
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP2003037153A (ja) * 2001-07-25 2003-02-07 Nikon Corp 保持装置、ステージ装置、および露光装置ならびに半導体デバイス
KR20050025626A (ko) * 2002-07-31 2005-03-14 가부시키가이샤 니콘 위치계측방법, 위치제어방법, 노광방법 및 노광장치,그리고 디바이스 제조방법
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2495613B1 (en) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
JP4184346B2 (ja) 2002-12-13 2008-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上のスポットを照射するための方法及び装置における液体除去
DE60307322T2 (de) 2002-12-19 2007-10-18 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
TW201908879A (zh) 2003-02-26 2019-03-01 日商尼康股份有限公司 曝光裝置、曝光方法及元件製造方法
KR101647934B1 (ko) 2003-05-06 2016-08-11 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
KR101146962B1 (ko) 2003-06-19 2012-05-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
JP4492239B2 (ja) * 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
WO2005029559A1 (ja) 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7102729B2 (en) * 2004-02-03 2006-09-05 Asml Netherlands B.V. Lithographic apparatus, measurement system, and device manufacturing method
JP2005317916A (ja) 2004-03-30 2005-11-10 Canon Inc 露光装置及びデバイス製造方法
JP4873242B2 (ja) 2004-06-22 2012-02-08 株式会社ニコン ベストフォーカス検出方法及び露光方法、並びに露光装置
KR100550352B1 (ko) * 2004-07-02 2006-02-08 삼성전자주식회사 반도체 기판의 노광방법 및 이를 이용하는 노광 장치
JP4747545B2 (ja) * 2004-09-30 2011-08-17 株式会社ニコン ステージ装置及び露光装置並びにデバイス製造方法
TWI654661B (zh) * 2004-11-18 2019-03-21 日商尼康股份有限公司 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
US20060139595A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness
KR100585170B1 (ko) * 2004-12-27 2006-06-02 삼성전자주식회사 트윈 기판 스테이지를 구비한 스캐너 장치, 이를 포함하는반도체 사진 설비 및 상기 설비를 이용한 반도체 소자의제조방법
JP2006278820A (ja) * 2005-03-30 2006-10-12 Nikon Corp 露光方法及び装置
JP4677267B2 (ja) * 2005-04-04 2011-04-27 キヤノン株式会社 平面ステージ装置及び露光装置
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5239337B2 (ja) 2005-04-28 2013-07-17 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
JP4410216B2 (ja) * 2005-05-24 2010-02-03 エーエスエムエル ネザーランズ ビー．ブイ． ２ステージ・リソグラフィ装置及びデバイス製造方法
JPWO2007055237A1 (ja) 2005-11-09 2009-04-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
CN101300662B (zh) * 2005-12-28 2012-05-09 株式会社尼康 图案形成方法及图案形成装置、以及元件制造方法
EP3171220A1 (en) 2006-01-19 2017-05-24 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP3327507B1 (en) 2006-02-21 2019-04-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
CN101986209B (zh) 2006-02-21 2012-06-20 株式会社尼康 曝光装置、曝光方法及组件制造方法
WO2007097466A1 (ja) 2006-02-21 2007-08-30 Nikon Corporation 測定装置及び方法、処理装置及び方法、パターン形成装置及び方法、露光装置及び方法、並びにデバイス製造方法
US7310132B2 (en) 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI454859B (zh) * 2006-03-30 2014-10-01 尼康股份有限公司 移動體裝置、曝光裝置與曝光方法以及元件製造方法
CN100504614C (zh) * 2006-04-14 2009-06-24 上海微电子装备有限公司 步进扫描光刻机双台交换定位系统
US7483120B2 (en) 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
EP2037487A4 (en) * 2006-06-09 2014-07-02 Nikon Corp APPARATUS WITH MOBILE BODY, APPARATUS AND METHOD FOR EXPOSURE, AND METHOD FOR MANUFACTURING DEVICES
KR101711323B1 (ko) 2006-08-31 2017-02-28 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101634893B1 (ko) 2006-08-31 2016-06-29 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI655517B (zh) 2006-08-31 2019-04-01 日商尼康股份有限公司 Exposure apparatus and method, and component manufacturing method
KR101660667B1 (ko) 2006-09-01 2016-09-27 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 디바이스 제조 방법, 그리고 캘리브레이션 방법
EP2993523B1 (en) 2006-09-01 2017-08-30 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
CN100468212C (zh) * 2006-09-22 2009-03-11 上海微电子装备有限公司 双台定位交换系统
JP2007274881A (ja) * 2006-12-01 2007-10-18 Nikon Corp 移動体装置、微動体及び露光装置
US7903866B2 (en) * 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object
TWI454851B (zh) 2007-12-28 2014-10-01 尼康股份有限公司 An exposure apparatus, a moving body driving system, a pattern forming apparatus, and an exposure method, and an element manufacturing method

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