HK1033028A1 - A ferroelectric data processing device - Google Patents

A ferroelectric data processing device

Info

Publication number
HK1033028A1
HK1033028A1 HK01103620A HK01103620A HK1033028A1 HK 1033028 A1 HK1033028 A1 HK 1033028A1 HK 01103620 A HK01103620 A HK 01103620A HK 01103620 A HK01103620 A HK 01103620A HK 1033028 A1 HK1033028 A1 HK 1033028A1
Authority
HK
Hong Kong
Prior art keywords
data processing
logic element
processing device
electrode
ferroelectric material
Prior art date
Application number
HK01103620A
Other languages
English (en)
Inventor
Hans Gude Gudesen
Per-Erik Nordal
Geirr I Leistad
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Publication of HK1033028A1 publication Critical patent/HK1033028A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Logic Circuits (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Credit Cards Or The Like (AREA)
  • Surgical Instruments (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
HK01103620A 1997-08-15 2001-05-24 A ferroelectric data processing device HK1033028A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO973782A NO309500B1 (no) 1997-08-15 1997-08-15 Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
PCT/NO1998/000237 WO1999012170A2 (no) 1997-08-15 1998-08-13 A ferro electric data processing device

Publications (1)

Publication Number Publication Date
HK1033028A1 true HK1033028A1 (en) 2001-08-10

Family

ID=19901012

Family Applications (1)

Application Number Title Priority Date Filing Date
HK01103620A HK1033028A1 (en) 1997-08-15 2001-05-24 A ferroelectric data processing device

Country Status (14)

Country Link
US (2) US6670659B1 (no)
EP (1) EP1002319B1 (no)
JP (1) JP3359331B2 (no)
KR (1) KR100368817B1 (no)
CN (1) CN1278336C (no)
AT (1) ATE268498T1 (no)
AU (1) AU734881B2 (no)
CA (1) CA2301283C (no)
DE (1) DE69824293T2 (no)
ES (1) ES2222600T3 (no)
HK (1) HK1033028A1 (no)
NO (1) NO309500B1 (no)
RU (1) RU2184400C2 (no)
WO (1) WO1999012170A2 (no)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE276536T1 (de) 1998-07-08 2004-10-15 E Ink Corp Verfahren zur verbesserung der farbwiedergabe in elektrophoretischen vorrichtungen, welche mikrokapseln verwenden
US8115729B2 (en) 1999-05-03 2012-02-14 E Ink Corporation Electrophoretic display element with filler particles
JP3622598B2 (ja) * 1999-10-25 2005-02-23 セイコーエプソン株式会社 不揮発性メモリ素子の製造方法
JP2001156264A (ja) * 1999-11-26 2001-06-08 Dainippon Printing Co Ltd 非破壊読み取り型強誘電体メモリ
JP2001230384A (ja) * 2000-02-17 2001-08-24 Seiko Epson Corp 多層強誘電体記憶装置
NO315728B1 (no) 2000-03-22 2003-10-13 Thin Film Electronics Asa Multidimensjonal adresseringsarkitektur for elektroniske innretninger
JP3901432B2 (ja) * 2000-08-22 2007-04-04 セイコーエプソン株式会社 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法
JP3940883B2 (ja) 2000-09-18 2007-07-04 セイコーエプソン株式会社 強誘電体メモリ装置の製造方法
EP1213745A1 (en) * 2000-12-05 2002-06-12 Sony International (Europe) GmbH Method of producing a ferroelectric memory and memory device
JP4058971B2 (ja) * 2001-03-26 2008-03-12 セイコーエプソン株式会社 強誘電体メモリ及び電子機器
JP2002359358A (ja) * 2001-03-26 2002-12-13 Seiko Epson Corp 強誘電体メモリ及び電子機器
US6858862B2 (en) 2001-06-29 2005-02-22 Intel Corporation Discrete polymer memory array and method of making same
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6960479B2 (en) * 2001-07-20 2005-11-01 Intel Corporation Stacked ferroelectric memory device and method of making same
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US7275135B2 (en) 2001-08-31 2007-09-25 Intel Corporation Hardware updated metadata for non-volatile mass storage cache
US6841818B2 (en) 2001-09-03 2005-01-11 Thin Film Electronics Asa Non-volatile memory device utilizing dueterated materials
NO314606B1 (no) * 2001-09-03 2003-04-14 Thin Film Electronics Asa Ikke-flyktig minneinnretning
US20030074524A1 (en) * 2001-10-16 2003-04-17 Intel Corporation Mass storage caching processes for power reduction
US7202847B2 (en) 2002-06-28 2007-04-10 E Ink Corporation Voltage modulated driver circuits for electro-optic displays
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
US6762950B2 (en) 2001-11-30 2004-07-13 Thin Film Electronics Asa Folded memory layers
NO20015871D0 (no) * 2001-11-30 2001-11-30 Thin Film Electronics Asa Minneinnretning med flettede lag
US6809362B2 (en) * 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
NO315399B1 (no) 2002-03-01 2003-08-25 Thin Film Electronics Asa Minnecelle
JP2003263804A (ja) * 2002-03-08 2003-09-19 Pioneer Electronic Corp 誘電体記録媒体とその製造方法及びその製造装置
JP4214708B2 (ja) 2002-03-27 2009-01-28 セイコーエプソン株式会社 強誘電体記憶装置及びその駆動方法
US7103724B2 (en) * 2002-04-01 2006-09-05 Intel Corporation Method and apparatus to generate cache data
US7727777B2 (en) * 2002-05-31 2010-06-01 Ebrahim Andideh Forming ferroelectric polymer memories
US6828685B2 (en) * 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
JP2004031728A (ja) * 2002-06-27 2004-01-29 Matsushita Electric Ind Co Ltd 記憶装置
US6812509B2 (en) * 2002-06-28 2004-11-02 Palo Alto Research Center Inc. Organic ferroelectric memory cells
US7049153B2 (en) * 2003-04-23 2006-05-23 Micron Technology, Inc. Polymer-based ferroelectric memory
JP2005085332A (ja) 2003-09-05 2005-03-31 Seiko Epson Corp 強誘電体記憶装置、その駆動方法及び駆動回路
US7130212B2 (en) * 2003-11-26 2006-10-31 International Business Machines Corporation Field effect device with a channel with a switchable conductivity
US7001782B1 (en) * 2003-12-29 2006-02-21 Intel Corporation Method and apparatus for filling interlayer vias on ferroelectric polymer substrates
NO321555B1 (no) * 2004-03-26 2006-05-29 Thin Film Electronics Asa Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
US7681998B2 (en) * 2004-06-02 2010-03-23 Fujifilm Corporation Laminated piezoelectric element, liquid droplet ejection head using same, and image forming apparatus comprising same
NO321280B1 (no) 2004-07-22 2006-04-18 Thin Film Electronics Asa Organisk, elektronisk krets og fremgangsmate til dens fremstilling
KR100607222B1 (ko) 2004-12-29 2006-08-01 한양대학교 산학협력단 교차하는 전극 사이에 나노 결정체를 이용한 논리 소자또는 기억 소자 및 그 제조 방법
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
US20070041233A1 (en) * 2005-08-19 2007-02-22 Seagate Technology Llc Wake-up of ferroelectric thin films for probe storage
KR100630437B1 (ko) * 2005-08-31 2006-10-02 삼성전자주식회사 비휘발성 유기물 저항 메모리 장치 및 그 제조 방법
SG135079A1 (en) * 2006-03-02 2007-09-28 Sony Corp Memory device which comprises a multi-layer capacitor
KR100866534B1 (ko) * 2007-01-31 2008-11-03 충남대학교산학협력단 액정 표시 장치의 전극
GB2447982A (en) * 2007-03-30 2008-10-01 Seiko Epson Corp Non-changeable read-out (NCRO)
CN101308876B (zh) * 2007-05-14 2014-08-06 旺宏电子股份有限公司 存储器结构及其操作方法
US8476735B2 (en) 2007-05-29 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable semiconductor interposer for electronic package and method of forming
US7718546B2 (en) * 2007-06-27 2010-05-18 Sandisk 3D Llc Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon
FR2925748B1 (fr) * 2007-12-21 2010-01-29 Commissariat Energie Atomique Support de stockage de donnees et procede associe
SG157268A1 (en) * 2008-05-30 2009-12-29 Sony Corp Ferroelectric polymer
CN101773814B (zh) * 2010-01-21 2012-03-14 高婧 多稳态微流控器件
US8437174B2 (en) 2010-02-15 2013-05-07 Micron Technology, Inc. Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
US8416609B2 (en) 2010-02-15 2013-04-09 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US8634224B2 (en) 2010-08-12 2014-01-21 Micron Technology, Inc. Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
RU2608958C2 (ru) * 2012-07-09 2017-01-27 ЗетТиИ Корпорейшн Способ и устройство сохранения данных
KR102519699B1 (ko) * 2016-12-02 2023-04-07 카버 싸이언티픽, 아이엔씨. 메모리 장치 및 용량성 에너지 저장 장치
US20190035562A1 (en) 2017-05-26 2019-01-31 Flash Power Capacitors, Llc High energy density capacitor system and method
EP3631825A4 (en) * 2017-05-26 2021-03-17 Flash Power Capacitors, LLC HIGH ENERGY DENSITY CAPACITOR AND WIRELESS CHARGING SYSTEM
US10867654B2 (en) 2019-01-17 2020-12-15 Xerox Corporation Method for testing a memory device
CN110428858B (zh) * 2019-07-11 2021-09-24 清华大学 基于具有滞回特性器件的静态存储器
CN111524891B (zh) * 2020-03-20 2023-12-12 南京大学 一种铁电柔性逻辑运算器件及其制造方法
US11393832B2 (en) * 2020-07-15 2022-07-19 Ferroelectric Memory Gmbh Memory cell arrangement
US12125513B2 (en) * 2021-04-22 2024-10-22 Seagate Technology Llc System on chip (SOC) with processor and integrated ferroelectric memory

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541159B2 (no) * 1974-10-21 1979-01-20
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5084278A (en) * 1989-06-02 1992-01-28 Nortec Development Associates, Inc. Taste-masked pharmaceutical compositions
US5329485A (en) * 1990-11-01 1994-07-12 Olympus Optical Co., Ltd. Memory device
JP2802685B2 (ja) * 1991-01-08 1998-09-24 キヤノン株式会社 強誘電性液晶装置
JP3142919B2 (ja) * 1991-11-06 2001-03-07 旭化成株式会社 セルロース誘導体ラテックス及びその製法
US5390142A (en) * 1992-05-26 1995-02-14 Kappa Numerics, Inc. Memory material and method for its manufacture
JPH0660635A (ja) * 1992-08-06 1994-03-04 Olympus Optical Co Ltd 強誘電体メモリ装置
US5375085A (en) * 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
US5666305A (en) * 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
JP3570692B2 (ja) 1994-01-18 2004-09-29 ローム株式会社 不揮発性メモリ
JP3127751B2 (ja) 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
KR100275782B1 (ko) * 1995-05-10 2000-12-15 박호군 강유전 박막 제조방법
JP3133922B2 (ja) * 1995-06-09 2001-02-13 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
US5579257A (en) * 1995-08-31 1996-11-26 Motorola, Inc. Method for reading and restoring data in a data storage element
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory
CA2257936A1 (en) 1996-06-12 1997-12-18 Opticom Asa Optical logic element and optical logic device
IL129242A0 (en) * 1996-10-01 2000-02-17 Cima Labs Inc Taste-masked microcapsule compositions and methods of manufacture
JP4053647B2 (ja) * 1997-02-27 2008-02-27 株式会社東芝 半導体記憶装置及びその製造方法
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
NO304956B1 (no) 1997-07-22 1999-03-08 Opticom As Elektrodeanordning uten og med et funksjonselement, samt en elektrodeinnretning dannet av elektrodeanordninger med funksjonselement og anvendelser derav

Also Published As

Publication number Publication date
WO1999012170A3 (no) 1999-05-06
JP2001515256A (ja) 2001-09-18
NO309500B1 (no) 2001-02-05
DE69824293T2 (de) 2005-06-16
NO973782L (no) 1999-02-16
ES2222600T3 (es) 2005-02-01
KR100368817B1 (ko) 2003-01-25
WO1999012170A2 (no) 1999-03-11
RU2184400C2 (ru) 2002-06-27
EP1002319A2 (en) 2000-05-24
US6670659B1 (en) 2003-12-30
ATE268498T1 (de) 2004-06-15
DE69824293D1 (de) 2004-07-08
CA2301283C (en) 2002-01-29
US6498744B2 (en) 2002-12-24
JP3359331B2 (ja) 2002-12-24
CA2301283A1 (en) 1999-03-11
US20020044480A1 (en) 2002-04-18
AU734881B2 (en) 2001-06-21
NO973782D0 (no) 1997-08-15
EP1002319B1 (en) 2004-06-02
AU8820498A (en) 1999-03-22
CN1278336C (zh) 2006-10-04
CN1276905A (zh) 2000-12-13
KR20010022949A (ko) 2001-03-26

Similar Documents

Publication Publication Date Title
HK1033028A1 (en) A ferroelectric data processing device
Bondurant Ferroelectronic RAM memory family for critical data storage
Auciello et al. The physics of ferroelectric memories
US5495438A (en) Nondestructive readout-type ferroelectric memory device having twisted hysteresis
US6809955B2 (en) Addressable and electrically reversible memory switch
KR900015339A (ko) 전기적인 독출/기록동작이 가능한 불휘발성 반도체기억장치 및 그 정보독출방법
US20160276014A1 (en) Ferroelectric Mechanical Memory Based on Remanent Displacement and Method
HK1057287A1 (en) Method for addressing of memory matrix
JP2002026277A (ja) メモリデバイス及びその駆動方法
JP2004510283A5 (no)
US3590337A (en) Plural dielectric layered electrically alterable non-destructive readout memory element
US5487030A (en) Ferroelectric interruptible read memory
KR910003839A (ko) 데이타 저장셀로 강자성체를 사용하는 반도체 집적회로장치
US5966318A (en) Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers
EP1481398B1 (en) A memory cell
Gnadinger High speed nonvolatile memories employing ferroelectric technology
TW432383B (en) High speed, high bandwidth, high density, nonvolatile memory system
US7504682B2 (en) Polarization transfer device and control method therefor
JPH08115986A (ja) 強誘電体不揮発性メモリの動作方法
WO2006072223A1 (en) Memory device for recording and storage of information in at least ternary code
WO1998008239A1 (en) Electrets as a power source

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100813