HK1011453A1 - Sensing schemes for flash memory with multilevel cells - Google Patents
Sensing schemes for flash memory with multilevel cellsInfo
- Publication number
- HK1011453A1 HK1011453A1 HK98112482A HK98112482A HK1011453A1 HK 1011453 A1 HK1011453 A1 HK 1011453A1 HK 98112482 A HK98112482 A HK 98112482A HK 98112482 A HK98112482 A HK 98112482A HK 1011453 A1 HK1011453 A1 HK 1011453A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- flash memory
- sensing schemes
- multilevel cells
- multilevel
- cells
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5632—Multilevel reading using successive approximation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25268094A | 1994-06-02 | 1994-06-02 | |
PCT/US1995/006230 WO1995034075A1 (en) | 1994-06-02 | 1995-05-18 | Sensing schemes for flash memory with multilevel cells |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1011453A1 true HK1011453A1 (en) | 1999-07-09 |
Family
ID=22957051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK98112482A HK1011453A1 (en) | 1994-06-02 | 1998-11-30 | Sensing schemes for flash memory with multilevel cells |
Country Status (9)
Country | Link |
---|---|
US (2) | US5828616A (zh) |
EP (1) | EP0763242B1 (zh) |
KR (1) | KR100287979B1 (zh) |
CN (1) | CN1147866C (zh) |
AU (1) | AU2593595A (zh) |
DE (1) | DE69521705D1 (zh) |
HK (1) | HK1011453A1 (zh) |
RU (1) | RU2190260C2 (zh) |
WO (1) | WO1995034075A1 (zh) |
Families Citing this family (65)
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US6002614A (en) | 1991-02-08 | 1999-12-14 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
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US5835414A (en) * | 1996-06-14 | 1998-11-10 | Macronix International Co., Ltd. | Page mode program, program verify, read and erase verify for floating gate memory device with low current page buffer |
US5754469A (en) * | 1996-06-14 | 1998-05-19 | Macronix International Co., Ltd. | Page mode floating gate memory device storing multiple bits per cell |
EP0904588B1 (en) * | 1996-06-14 | 2001-07-25 | Infineon Technologies AG | A device and method for multi-level charge/storage and reading out |
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KR100226746B1 (ko) * | 1996-12-30 | 1999-10-15 | 구본준 | 다중비트셀의데이타센싱장치및방법 |
JP3169858B2 (ja) * | 1997-06-20 | 2001-05-28 | 日本電気アイシーマイコンシステム株式会社 | 多値型半導体記憶装置 |
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JP3165101B2 (ja) * | 1998-03-05 | 2001-05-14 | 日本電気アイシーマイコンシステム株式会社 | 多値式半導体メモリ装置およびその不良救済方法 |
KR100339023B1 (ko) * | 1998-03-28 | 2002-09-18 | 주식회사 하이닉스반도체 | 문턱전압을조절할수있는플래쉬메모리장치의센싱회로 |
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JP4249352B2 (ja) * | 1999-11-09 | 2009-04-02 | 富士通株式会社 | 不揮発性半導体記憶装置 |
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DE60039587D1 (de) | 2000-05-31 | 2008-09-04 | St Microelectronics Srl | Schaltungsanordnung zum Programmieren von Daten in Referenzzellen einer nichtflüchtigen Multibitspeicheranordnung |
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JP4113423B2 (ja) * | 2002-12-04 | 2008-07-09 | シャープ株式会社 | 半導体記憶装置及びリファレンスセルの補正方法 |
JP2005092923A (ja) * | 2003-09-12 | 2005-04-07 | Renesas Technology Corp | 半導体記憶装置 |
JP3924568B2 (ja) * | 2004-02-20 | 2007-06-06 | Necエレクトロニクス株式会社 | フラッシュメモリにおけるデータアクセス制御方法、データアクセス制御プログラム |
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ITMI20042538A1 (it) * | 2004-12-29 | 2005-03-29 | Atmel Corp | Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli |
KR100666174B1 (ko) * | 2005-04-27 | 2007-01-09 | 삼성전자주식회사 | 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법 |
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US7656710B1 (en) | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
JP4660353B2 (ja) * | 2005-11-01 | 2011-03-30 | 株式会社東芝 | 記憶媒体再生装置 |
US7941590B2 (en) * | 2006-11-06 | 2011-05-10 | Marvell World Trade Ltd. | Adaptive read and write systems and methods for memory cells |
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KR101261008B1 (ko) * | 2007-08-14 | 2013-05-06 | 삼성전자주식회사 | 3-레벨 비휘발성 메모리 셀을 포함하는 비휘발성 메모리장치의 구동 방법 및 그 방법을 사용하는 비휘발성 메모리장치 |
US8255623B2 (en) * | 2007-09-24 | 2012-08-28 | Nvidia Corporation | Ordered storage structure providing enhanced access to stored items |
US7916537B2 (en) * | 2009-06-11 | 2011-03-29 | Seagate Technology Llc | Multilevel cell memory devices having reference point cells |
CN102081959B (zh) * | 2009-11-26 | 2013-06-12 | 中国科学院微电子研究所 | 一种存储器读出电路以及存储器 |
CN102932611B (zh) * | 2012-10-15 | 2015-10-28 | 清华大学 | 一种基于快闪存储器的图像传感器的数据读出电路 |
CN102932609B (zh) * | 2012-10-15 | 2015-06-24 | 清华大学 | 一种基于快闪存储器的图像传感器的数据读取方法 |
CN102932610B (zh) * | 2012-10-15 | 2016-03-23 | 清华大学 | 一种基于快闪存储器的图像传感器阵列结构 |
US9946495B2 (en) | 2013-04-25 | 2018-04-17 | Microsoft Technology Licensing, Llc | Dirty data management for hybrid drives |
KR20180016854A (ko) * | 2016-08-08 | 2018-02-20 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 동작 방법 |
US11605434B1 (en) * | 2021-08-31 | 2023-03-14 | Micron Technology, Inc. | Overwriting at a memory system |
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-
1995
- 1995-05-18 RU RU97100133/09A patent/RU2190260C2/ru not_active IP Right Cessation
- 1995-05-18 WO PCT/US1995/006230 patent/WO1995034075A1/en active IP Right Grant
- 1995-05-18 DE DE69521705T patent/DE69521705D1/de not_active Expired - Lifetime
- 1995-05-18 AU AU25935/95A patent/AU2593595A/en not_active Abandoned
- 1995-05-18 KR KR1019960706632A patent/KR100287979B1/ko not_active IP Right Cessation
- 1995-05-18 EP EP95920503A patent/EP0763242B1/en not_active Expired - Lifetime
- 1995-05-18 CN CNB951933981A patent/CN1147866C/zh not_active Expired - Fee Related
-
1997
- 1997-02-19 US US08/801,004 patent/US5828616A/en not_active Expired - Lifetime
- 1997-04-10 US US08/827,670 patent/US5748546A/en not_active Expired - Lifetime
-
1998
- 1998-11-30 HK HK98112482A patent/HK1011453A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1995034075A1 (en) | 1995-12-14 |
AU2593595A (en) | 1996-01-04 |
US5748546A (en) | 1998-05-05 |
DE69521705D1 (de) | 2001-08-16 |
US5828616A (en) | 1998-10-27 |
CN1150494A (zh) | 1997-05-21 |
EP0763242B1 (en) | 2001-07-11 |
RU2190260C2 (ru) | 2002-09-27 |
EP0763242A1 (en) | 1997-03-19 |
KR100287979B1 (ko) | 2001-05-02 |
CN1147866C (zh) | 2004-04-28 |
EP0763242A4 (en) | 1998-08-12 |
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