HK1011453A1 - Sensing schemes for flash memory with multilevel cells - Google Patents
Sensing schemes for flash memory with multilevel cellsInfo
- Publication number
- HK1011453A1 HK1011453A1 HK98112482A HK98112482A HK1011453A1 HK 1011453 A1 HK1011453 A1 HK 1011453A1 HK 98112482 A HK98112482 A HK 98112482A HK 98112482 A HK98112482 A HK 98112482A HK 1011453 A1 HK1011453 A1 HK 1011453A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- flash memory
- sensing schemes
- multilevel cells
- multilevel
- cells
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5632—Multilevel reading using successive approximation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25268094A | 1994-06-02 | 1994-06-02 | |
PCT/US1995/006230 WO1995034075A1 (en) | 1994-06-02 | 1995-05-18 | Sensing schemes for flash memory with multilevel cells |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1011453A1 true HK1011453A1 (en) | 1999-07-09 |
Family
ID=22957051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK98112482A HK1011453A1 (en) | 1994-06-02 | 1998-11-30 | Sensing schemes for flash memory with multilevel cells |
Country Status (9)
Country | Link |
---|---|
US (2) | US5828616A (xx) |
EP (1) | EP0763242B1 (xx) |
KR (1) | KR100287979B1 (xx) |
CN (1) | CN1147866C (xx) |
AU (1) | AU2593595A (xx) |
DE (1) | DE69521705D1 (xx) |
HK (1) | HK1011453A1 (xx) |
RU (1) | RU2190260C2 (xx) |
WO (1) | WO1995034075A1 (xx) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002614A (en) | 1991-02-08 | 1999-12-14 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
JP3205658B2 (ja) | 1993-12-28 | 2001-09-04 | 新日本製鐵株式会社 | 半導体記憶装置の読み出し方法 |
US5748535A (en) * | 1994-10-26 | 1998-05-05 | Macronix International Co., Ltd. | Advanced program verify for page mode flash memory |
US6353554B1 (en) | 1995-02-27 | 2002-03-05 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
US5835414A (en) * | 1996-06-14 | 1998-11-10 | Macronix International Co., Ltd. | Page mode program, program verify, read and erase verify for floating gate memory device with low current page buffer |
US5754469A (en) * | 1996-06-14 | 1998-05-19 | Macronix International Co., Ltd. | Page mode floating gate memory device storing multiple bits per cell |
EP0904588B1 (en) * | 1996-06-14 | 2001-07-25 | Infineon Technologies AG | A device and method for multi-level charge/storage and reading out |
US6857099B1 (en) * | 1996-09-18 | 2005-02-15 | Nippon Steel Corporation | Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program |
KR100226746B1 (ko) * | 1996-12-30 | 1999-10-15 | 구본준 | 다중비트셀의데이타센싱장치및방법 |
JP3169858B2 (ja) * | 1997-06-20 | 2001-05-28 | 日本電気アイシーマイコンシステム株式会社 | 多値型半導体記憶装置 |
JPH11176178A (ja) * | 1997-12-15 | 1999-07-02 | Sony Corp | 不揮発性半導体記憶装置およびそれを用いたicメモリカード |
JP3165101B2 (ja) * | 1998-03-05 | 2001-05-14 | 日本電気アイシーマイコンシステム株式会社 | 多値式半導体メモリ装置およびその不良救済方法 |
KR100339023B1 (ko) * | 1998-03-28 | 2002-09-18 | 주식회사 하이닉스반도체 | 문턱전압을조절할수있는플래쉬메모리장치의센싱회로 |
US6038166A (en) * | 1998-04-01 | 2000-03-14 | Invox Technology | High resolution multi-bit-per-cell memory |
US5999451A (en) * | 1998-07-13 | 1999-12-07 | Macronix International Co., Ltd. | Byte-wide write scheme for a page flash device |
CA2277717C (en) | 1999-07-12 | 2006-12-05 | Mosaid Technologies Incorporated | Circuit and method for multiple match detection in content addressable memories |
US6188606B1 (en) | 1999-08-06 | 2001-02-13 | Advanced Micro Devices, Inc. | Multi state sensing of NAND memory cells by varying source bias |
US6141244A (en) * | 1999-09-02 | 2000-10-31 | Advanced Micro Devices, Inc. | Multi level sensing of NAND memory cells by external bias current |
US6550028B1 (en) * | 1999-10-19 | 2003-04-15 | Advanced Micro Devices, Inc. | Array VT mode implementation for a simultaneous operation flash memory device |
US6219279B1 (en) * | 1999-10-29 | 2001-04-17 | Zilog, Inc. | Non-volatile memory program driver and read reference circuits |
JP4249352B2 (ja) * | 1999-11-09 | 2009-04-02 | 富士通株式会社 | 不揮発性半導体記憶装置 |
US6292395B1 (en) * | 1999-12-30 | 2001-09-18 | Macronix International Co., Ltd. | Source and drain sensing |
US6363008B1 (en) | 2000-02-17 | 2002-03-26 | Multi Level Memory Technology | Multi-bit-cell non-volatile memory with maximized data capacity |
US6856568B1 (en) | 2000-04-25 | 2005-02-15 | Multi Level Memory Technology | Refresh operations that change address mappings in a non-volatile memory |
US7079422B1 (en) | 2000-04-25 | 2006-07-18 | Samsung Electronics Co., Ltd. | Periodic refresh operations for non-volatile multiple-bit-per-cell memory |
US6396744B1 (en) | 2000-04-25 | 2002-05-28 | Multi Level Memory Technology | Flash memory with dynamic refresh |
EP1160795B1 (en) | 2000-05-31 | 2007-12-19 | STMicroelectronics S.r.l. | Reference cells matrix structure for reading data in a nonvolatile memory device |
DE60039587D1 (de) | 2000-05-31 | 2008-09-04 | St Microelectronics Srl | Schaltungsanordnung zum Programmieren von Daten in Referenzzellen einer nichtflüchtigen Multibitspeicheranordnung |
US6744671B2 (en) * | 2000-12-29 | 2004-06-01 | Intel Corporation | Kicker for non-volatile memory drain bias |
US6535423B2 (en) * | 2000-12-29 | 2003-03-18 | Intel Corporation | Drain bias for non-volatile memory |
US6477086B2 (en) | 2000-12-29 | 2002-11-05 | Intel Corporation | Local sensing of non-volatile memory |
US6570789B2 (en) | 2000-12-29 | 2003-05-27 | Intel Corporation | Load for non-volatile memory drain bias |
US6456540B1 (en) | 2001-01-30 | 2002-09-24 | Intel Corporation | Method and apparatus for gating a global column select line with address transition detection |
EP1249841B1 (en) * | 2001-04-10 | 2008-10-29 | STMicroelectronics S.r.l. | Reading circuit and method for a multilevel non volatile memory |
TW559814B (en) * | 2001-05-31 | 2003-11-01 | Semiconductor Energy Lab | Nonvolatile memory and method of driving the same |
US6496051B1 (en) * | 2001-09-06 | 2002-12-17 | Sharp Laboratories Of America, Inc. | Output sense amplifier for a multibit memory cell |
US6700815B2 (en) * | 2002-04-08 | 2004-03-02 | Advanced Micro Devices, Inc. | Refresh scheme for dynamic page programming |
US6594181B1 (en) * | 2002-05-10 | 2003-07-15 | Fujitsu Limited | System for reading a double-bit memory cell |
US20030214867A1 (en) * | 2002-05-17 | 2003-11-20 | Matthew Goldman | Serially sensing the output of multilevel cell arrays |
TW564426B (en) * | 2002-07-09 | 2003-12-01 | Macronix Int Co Ltd | Circuit and method of sensing amplifier with adjustable reference terminal bit line load |
US6847550B2 (en) * | 2002-10-25 | 2005-01-25 | Nexflash Technologies, Inc. | Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor |
JP4113423B2 (ja) * | 2002-12-04 | 2008-07-09 | シャープ株式会社 | 半導体記憶装置及びリファレンスセルの補正方法 |
JP2005092923A (ja) * | 2003-09-12 | 2005-04-07 | Renesas Technology Corp | 半導体記憶装置 |
JP3924568B2 (ja) * | 2004-02-20 | 2007-06-06 | Necエレクトロニクス株式会社 | フラッシュメモリにおけるデータアクセス制御方法、データアクセス制御プログラム |
ITMI20041988A1 (it) * | 2004-10-20 | 2005-01-20 | Atmel Corp | "metodo e sistema per la fornitura di rilevazione in un dispositivo di memoria a banchi multipli." |
ITMI20042538A1 (it) * | 2004-12-29 | 2005-03-29 | Atmel Corp | Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli |
KR100666174B1 (ko) * | 2005-04-27 | 2007-01-09 | 삼성전자주식회사 | 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법 |
ITMI20051075A1 (it) * | 2005-06-10 | 2006-12-11 | Atmel Corp | "sistema e metodo per eguagliare la resistenza in una memoria non volatile" |
US7656710B1 (en) | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
JP4660353B2 (ja) * | 2005-11-01 | 2011-03-30 | 株式会社東芝 | 記憶媒体再生装置 |
US7941590B2 (en) * | 2006-11-06 | 2011-05-10 | Marvell World Trade Ltd. | Adaptive read and write systems and methods for memory cells |
DE102007001859B3 (de) * | 2007-01-12 | 2008-04-24 | Qimonda Ag | Integrierte Schaltung, Speicherbaustein und Verfahren zum Bestimmen eines Speicherzustands einer resistiven Speicherzelle |
US7400521B1 (en) | 2007-01-12 | 2008-07-15 | Qimoda Ag | Integrated circuit, memory chip and method of evaluating a memory state of a resistive memory cell |
KR101261008B1 (ko) * | 2007-08-14 | 2013-05-06 | 삼성전자주식회사 | 3-레벨 비휘발성 메모리 셀을 포함하는 비휘발성 메모리장치의 구동 방법 및 그 방법을 사용하는 비휘발성 메모리장치 |
US8255623B2 (en) * | 2007-09-24 | 2012-08-28 | Nvidia Corporation | Ordered storage structure providing enhanced access to stored items |
US7916537B2 (en) * | 2009-06-11 | 2011-03-29 | Seagate Technology Llc | Multilevel cell memory devices having reference point cells |
CN102081959B (zh) * | 2009-11-26 | 2013-06-12 | 中国科学院微电子研究所 | 一种存储器读出电路以及存储器 |
CN102932611B (zh) * | 2012-10-15 | 2015-10-28 | 清华大学 | 一种基于快闪存储器的图像传感器的数据读出电路 |
CN102932609B (zh) * | 2012-10-15 | 2015-06-24 | 清华大学 | 一种基于快闪存储器的图像传感器的数据读取方法 |
CN102932610B (zh) * | 2012-10-15 | 2016-03-23 | 清华大学 | 一种基于快闪存储器的图像传感器阵列结构 |
US9946495B2 (en) | 2013-04-25 | 2018-04-17 | Microsoft Technology Licensing, Llc | Dirty data management for hybrid drives |
KR20180016854A (ko) * | 2016-08-08 | 2018-02-20 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 동작 방법 |
US11605434B1 (en) * | 2021-08-31 | 2023-03-14 | Micron Technology, Inc. | Overwriting at a memory system |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3142824A (en) * | 1963-10-16 | 1964-07-28 | Control Data Corp | Analog storage circuit |
US3304103A (en) * | 1965-12-22 | 1967-02-14 | Ibm | Cut card continuous forms |
US3505655A (en) * | 1968-06-21 | 1970-04-07 | Ibm | Digital storage system operating in the magnitude-time domain |
FR2246022B1 (xx) * | 1973-09-28 | 1979-06-01 | Siemens Ag | |
US4181980A (en) * | 1978-05-15 | 1980-01-01 | Electronic Arrays, Inc. | Acquisition and storage of analog signals |
US4202044A (en) * | 1978-06-13 | 1980-05-06 | International Business Machines Corporation | Quaternary FET read only memory |
US4287570A (en) * | 1979-06-01 | 1981-09-01 | Intel Corporation | Multiple bit read-only memory cell and its sense amplifier |
IT1224062B (it) * | 1979-09-28 | 1990-09-26 | Ates Componenti Elettron | Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile |
JPS5660247A (en) * | 1979-10-22 | 1981-05-25 | Hiraoka Shokusen | Soft sheet |
US4415992A (en) * | 1981-02-25 | 1983-11-15 | Motorola, Inc. | Memory system having memory cells capable of storing more than two states |
JPS57176598A (en) * | 1981-04-20 | 1982-10-29 | Sanyo Electric Co Ltd | Write-in circuit for non-volatile analog memory |
US4388702A (en) * | 1981-08-21 | 1983-06-14 | Mostek Corporation | Multi-bit read only memory circuit |
US4460982A (en) * | 1982-05-20 | 1984-07-17 | Intel Corporation | Intelligent electrically programmable and electrically erasable ROM |
JPS5949022A (ja) * | 1982-09-13 | 1984-03-21 | Toshiba Corp | 多値論理回路 |
JPS6013398A (ja) * | 1983-07-04 | 1985-01-23 | Hitachi Ltd | 半導体多値記憶装置 |
EP0136119B1 (en) * | 1983-09-16 | 1988-06-29 | Fujitsu Limited | Plural-bit-per-cell read-only memory |
US4771404A (en) * | 1984-09-05 | 1988-09-13 | Nippon Telegraph And Telephone Corporation | Memory device employing multilevel storage circuits |
US4701884A (en) * | 1985-08-16 | 1987-10-20 | Hitachi, Ltd. | Semiconductor memory for serial data access |
US5012448A (en) * | 1985-12-13 | 1991-04-30 | Ricoh Company, Ltd. | Sense amplifier for a ROM having a multilevel memory cell |
US4943948A (en) * | 1986-06-05 | 1990-07-24 | Motorola, Inc. | Program check for a non-volatile memory |
US5034922A (en) * | 1987-12-21 | 1991-07-23 | Motorola, Inc. | Intelligent electrically erasable, programmable read-only memory with improved read latency |
US4875188A (en) * | 1988-01-12 | 1989-10-17 | Intel Corporation | Voltage margining circuit for flash eprom |
US5053990A (en) * | 1988-02-17 | 1991-10-01 | Intel Corporation | Program/erase selection for flash memory |
US5222046A (en) * | 1988-02-17 | 1993-06-22 | Intel Corporation | Processor controlled command port architecture for flash memory |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5293560A (en) * | 1988-06-08 | 1994-03-08 | Eliyahou Harari | Multi-state flash EEPROM system using incremental programing and erasing methods |
US5043940A (en) * | 1988-06-08 | 1991-08-27 | Eliyahou Harari | Flash EEPROM memory systems having multistate storage cells |
US4989179A (en) * | 1988-07-13 | 1991-01-29 | Information Storage Devices, Inc. | High density integrated circuit analog signal recording and playback system |
US4890259A (en) * | 1988-07-13 | 1989-12-26 | Information Storage Devices | High density integrated circuit analog signal recording and playback system |
JPH07105146B2 (ja) * | 1988-07-29 | 1995-11-13 | 三菱電機株式会社 | 不揮発性記憶装置 |
US5163021A (en) * | 1989-04-13 | 1992-11-10 | Sundisk Corporation | Multi-state EEprom read and write circuits and techniques |
US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
EP0675502B1 (en) * | 1989-04-13 | 2005-05-25 | SanDisk Corporation | Multiple sector erase flash EEPROM system |
FR2650109B1 (fr) * | 1989-07-20 | 1993-04-02 | Gemplus Card Int | Circuit integre mos a tension de seuil ajustable |
US5200920A (en) * | 1990-02-08 | 1993-04-06 | Altera Corporation | Method for programming programmable elements in programmable devices |
US5289406A (en) * | 1990-08-28 | 1994-02-22 | Mitsubishi Denki Kabushiki Kaisha | Read only memory for storing multi-data |
US5126967A (en) * | 1990-09-26 | 1992-06-30 | Information Storage Devices, Inc. | Writable distributed non-volatile analog reference system and method for analog signal recording and playback |
JPH04154212A (ja) * | 1990-10-17 | 1992-05-27 | Mitsubishi Electric Corp | 半導体記憶装置の出力回路 |
JP2573416B2 (ja) * | 1990-11-28 | 1997-01-22 | 株式会社東芝 | 半導体記憶装置 |
US5220531A (en) * | 1991-01-02 | 1993-06-15 | Information Storage Devices, Inc. | Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback |
JP2680198B2 (ja) * | 1991-02-08 | 1997-11-19 | 三菱電機株式会社 | 音声ディジタル1リンク接続方式 |
US5218569A (en) * | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
JP3408552B2 (ja) * | 1991-02-11 | 2003-05-19 | インテル・コーポレーション | 不揮発性半導体メモリをプログラム及び消去する回路とその方法 |
FR2672709B1 (fr) * | 1991-02-11 | 1994-09-30 | Intel Corp | Machine d'etat d'ordre. |
KR950008443B1 (ko) * | 1991-06-28 | 1995-07-31 | 샤프 가부시끼가이샤 | 2-가/n-가 변환유니트를 포함하는 기억장치 |
US5245572A (en) * | 1991-07-30 | 1993-09-14 | Intel Corporation | Floating gate nonvolatile memory with reading while writing capability |
JPH0574181A (ja) * | 1991-09-10 | 1993-03-26 | Nec Corp | 半導体メモリ装置のデータ読み出し回路 |
US5237535A (en) * | 1991-10-09 | 1993-08-17 | Intel Corporation | Method of repairing overerased cells in a flash memory |
US5388064A (en) * | 1991-11-26 | 1995-02-07 | Information Storage Devices, Inc. | Programmable non-volatile analog voltage source devices and methods |
US5289412A (en) * | 1992-06-19 | 1994-02-22 | Intel Corporation | High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories |
US5283761A (en) * | 1992-07-22 | 1994-02-01 | Mosaid Technologies Incorporated | Method of multi-level storage in DRAM |
US5375097A (en) * | 1993-06-29 | 1994-12-20 | Reddy; Chitranjan N. | Segmented bus architecture for improving speed in integrated circuit memories |
US5537350A (en) * | 1993-09-10 | 1996-07-16 | Intel Corporation | Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array |
US5440505A (en) * | 1994-01-21 | 1995-08-08 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
US5515317A (en) * | 1994-06-02 | 1996-05-07 | Intel Corporation | Addressing modes for a dynamic single bit per cell to multiple bit per cell memory |
US5539690A (en) * | 1994-06-02 | 1996-07-23 | Intel Corporation | Write verify schemes for flash memory with multilevel cells |
US5450363A (en) * | 1994-06-02 | 1995-09-12 | Intel Corporation | Gray coding for a multilevel cell memory system |
US5497354A (en) * | 1994-06-02 | 1996-03-05 | Intel Corporation | Bit map addressing schemes for flash memory |
US5594691A (en) * | 1995-02-15 | 1997-01-14 | Intel Corporation | Address transition detection sensing interface for flash memory having multi-bit cells |
-
1995
- 1995-05-18 RU RU97100133/09A patent/RU2190260C2/ru not_active IP Right Cessation
- 1995-05-18 WO PCT/US1995/006230 patent/WO1995034075A1/en active IP Right Grant
- 1995-05-18 DE DE69521705T patent/DE69521705D1/de not_active Expired - Lifetime
- 1995-05-18 AU AU25935/95A patent/AU2593595A/en not_active Abandoned
- 1995-05-18 KR KR1019960706632A patent/KR100287979B1/ko not_active IP Right Cessation
- 1995-05-18 EP EP95920503A patent/EP0763242B1/en not_active Expired - Lifetime
- 1995-05-18 CN CNB951933981A patent/CN1147866C/zh not_active Expired - Fee Related
-
1997
- 1997-02-19 US US08/801,004 patent/US5828616A/en not_active Expired - Lifetime
- 1997-04-10 US US08/827,670 patent/US5748546A/en not_active Expired - Lifetime
-
1998
- 1998-11-30 HK HK98112482A patent/HK1011453A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1995034075A1 (en) | 1995-12-14 |
AU2593595A (en) | 1996-01-04 |
US5748546A (en) | 1998-05-05 |
DE69521705D1 (de) | 2001-08-16 |
US5828616A (en) | 1998-10-27 |
CN1150494A (zh) | 1997-05-21 |
EP0763242B1 (en) | 2001-07-11 |
RU2190260C2 (ru) | 2002-09-27 |
EP0763242A1 (en) | 1997-03-19 |
KR100287979B1 (ko) | 2001-05-02 |
CN1147866C (zh) | 2004-04-28 |
EP0763242A4 (en) | 1998-08-12 |
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