DE69605533D1 - Profilierte nichtflüchtige speicherzelle - Google Patents

Profilierte nichtflüchtige speicherzelle

Info

Publication number
DE69605533D1
DE69605533D1 DE69605533T DE69605533T DE69605533D1 DE 69605533 D1 DE69605533 D1 DE 69605533D1 DE 69605533 T DE69605533 T DE 69605533T DE 69605533 T DE69605533 T DE 69605533T DE 69605533 D1 DE69605533 D1 DE 69605533D1
Authority
DE
Germany
Prior art keywords
volatile storage
storage cell
profiled non
profiled
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69605533T
Other languages
English (en)
Other versions
DE69605533T2 (de
Inventor
Mark Simpson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69605533D1 publication Critical patent/DE69605533D1/de
Publication of DE69605533T2 publication Critical patent/DE69605533T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
DE69605533T 1995-11-22 1996-09-25 Profilierte nichtflüchtige speicherzelle Expired - Fee Related DE69605533T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/561,960 US6362504B1 (en) 1995-11-22 1995-11-22 Contoured nonvolatile memory cell
PCT/IB1996/000993 WO1997019472A1 (en) 1995-11-22 1996-09-25 Contoured nonvolatile memory cell

Publications (2)

Publication Number Publication Date
DE69605533D1 true DE69605533D1 (de) 2000-01-13
DE69605533T2 DE69605533T2 (de) 2000-07-20

Family

ID=24244223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605533T Expired - Fee Related DE69605533T2 (de) 1995-11-22 1996-09-25 Profilierte nichtflüchtige speicherzelle

Country Status (6)

Country Link
US (1) US6362504B1 (de)
EP (1) EP0804808B1 (de)
JP (1) JPH11501774A (de)
DE (1) DE69605533T2 (de)
TW (1) TW335553B (de)
WO (1) WO1997019472A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4354596B2 (ja) * 1999-12-10 2009-10-28 シャープ株式会社 半導体記憶装置の製造方法及び半導体記憶装置
US6864529B2 (en) * 2001-08-23 2005-03-08 Hewlett-Packard Development Company, L.P. Thin film transistor memory device
US8193612B2 (en) * 2004-02-12 2012-06-05 International Rectifier Corporation Complimentary nitride transistors vertical and common drain
US7170130B2 (en) 2004-08-11 2007-01-30 Spansion Llc Memory cell with reduced DIBL and Vss resistance
JP2007251132A (ja) * 2006-02-16 2007-09-27 Toshiba Corp Ｍｏｎｏｓ型不揮発性メモリセル、不揮発性メモリおよびその製造方法
KR100780866B1 (ko) * 2006-12-14 2007-11-30 삼성전자주식회사 비휘발성 메모리 소자 및 그 형성방법
CN101652475B (zh) * 2007-01-26 2014-03-19 辛那杰瓦生物制药股份有限公司 在禽类中进行转基因表达
TWI581373B (zh) * 2015-02-17 2017-05-01 力晶科技股份有限公司 非揮發性記憶體及其製造方法
US11282844B2 (en) * 2018-06-27 2022-03-22 Ememory Technology Inc. Erasable programmable non-volatile memory including two floating gate transistors with the same floating gate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129216B (en) * 1982-10-12 1985-12-18 Secr Defence Field effect transistors
JPS611056A (ja) 1984-06-14 1986-01-07 Toshiba Corp 不揮発性半導体記憶装置
US4698787A (en) 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US5172196A (en) * 1984-11-26 1992-12-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US4763177A (en) 1985-02-19 1988-08-09 Texas Instruments Incorporated Read only memory with improved channel length isolation and method of forming
US4979004A (en) 1988-01-29 1990-12-18 Texas Instruments Incorporated Floating gate memory cell and device
US5146426A (en) 1990-11-08 1992-09-08 North American Philips Corp. Electrically erasable and programmable read only memory with trench structure
US5461249A (en) * 1991-10-31 1995-10-24 Rohm Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method therefor
JPH06104451A (ja) 1992-09-22 1994-04-15 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置
JP3159850B2 (ja) 1993-11-08 2001-04-23 シャープ株式会社 不揮発性半導体記憶装置及びその製造方法
US5519653A (en) * 1994-03-11 1996-05-21 Thomas; Mammen Channel accelerated carrier tunneling-(CACT) method for programming memories
KR0136995B1 (ko) 1994-09-08 1998-04-24 김주용 비휘발성메모리셀의제조방법

Also Published As

Publication number Publication date
DE69605533T2 (de) 2000-07-20
TW335553B (en) 1998-07-01
US6362504B1 (en) 2002-03-26
WO1997019472A1 (en) 1997-05-29
EP0804808A1 (de) 1997-11-05
JPH11501774A (ja) 1999-02-09
EP0804808B1 (de) 1999-12-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee