GB2129216B - Field effect transistors - Google Patents

Field effect transistors

Info

Publication number
GB2129216B
GB2129216B GB08327060A GB8327060A GB2129216B GB 2129216 B GB2129216 B GB 2129216B GB 08327060 A GB08327060 A GB 08327060A GB 8327060 A GB8327060 A GB 8327060A GB 2129216 B GB2129216 B GB 2129216B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
transistors
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08327060A
Other versions
GB8327060D0 (en
GB2129216A (en
Inventor
John Charles White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of GB8327060D0 publication Critical patent/GB8327060D0/en
Publication of GB2129216A publication Critical patent/GB2129216A/en
Application granted granted Critical
Publication of GB2129216B publication Critical patent/GB2129216B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
GB08327060A 1982-10-12 1983-10-10 Field effect transistors Expired GB2129216B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8229071 1982-10-12

Publications (3)

Publication Number Publication Date
GB8327060D0 GB8327060D0 (en) 1983-11-09
GB2129216A GB2129216A (en) 1984-05-10
GB2129216B true GB2129216B (en) 1985-12-18

Family

ID=10533538

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08327060A Expired GB2129216B (en) 1982-10-12 1983-10-10 Field effect transistors

Country Status (5)

Country Link
JP (1) JPS5990960A (en)
CA (1) CA1218471A (en)
DE (1) DE3337123A1 (en)
FR (1) FR2534417A1 (en)
GB (1) GB2129216B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218089A (en) * 2014-09-10 2014-12-17 北京大学 Stepped gate-dielectric double-layer graphene field effect transistor and production method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US6362504B1 (en) * 1995-11-22 2002-03-26 Philips Electronics North America Corporation Contoured nonvolatile memory cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1301702A (en) * 1969-01-27 1973-01-04
US4243997A (en) * 1976-03-25 1981-01-06 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
US4324038A (en) * 1980-11-24 1982-04-13 Bell Telephone Laboratories, Incorporated Method of fabricating MOS field effect transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218089A (en) * 2014-09-10 2014-12-17 北京大学 Stepped gate-dielectric double-layer graphene field effect transistor and production method thereof

Also Published As

Publication number Publication date
FR2534417A1 (en) 1984-04-13
DE3337123A1 (en) 1984-04-12
CA1218471A (en) 1987-02-24
GB8327060D0 (en) 1983-11-09
JPS5990960A (en) 1984-05-25
GB2129216A (en) 1984-05-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee